IT1106372B - Procedimento per produrre silicion drogato diminuendo i danni da radiazioni - Google Patents

Procedimento per produrre silicion drogato diminuendo i danni da radiazioni

Info

Publication number
IT1106372B
IT1106372B IT52132/78A IT5213278A IT1106372B IT 1106372 B IT1106372 B IT 1106372B IT 52132/78 A IT52132/78 A IT 52132/78A IT 5213278 A IT5213278 A IT 5213278A IT 1106372 B IT1106372 B IT 1106372B
Authority
IT
Italy
Prior art keywords
droged
silicion
radiation
procedure
produce
Prior art date
Application number
IT52132/78A
Other languages
English (en)
Other versions
IT7852132A0 (it
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of IT7852132A0 publication Critical patent/IT7852132A0/it
Application granted granted Critical
Publication of IT1106372B publication Critical patent/IT1106372B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/20—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices for inducing a nuclear reaction transmuting chemical elements
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21G—CONVERSION OF CHEMICAL ELEMENTS; RADIOACTIVE SOURCES
    • G21G1/00—Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation or particle bombardment, e.g. producing radioactive isotopes
    • G21G1/04—Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation or particle bombardment, e.g. producing radioactive isotopes outside nuclear reactors or particle accelerators
    • G21G1/06—Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation or particle bombardment, e.g. producing radioactive isotopes outside nuclear reactors or particle accelerators by neutron irradiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT52132/78A 1977-12-01 1978-11-29 Procedimento per produrre silicion drogato diminuendo i danni da radiazioni IT1106372B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2753488A DE2753488C2 (de) 1977-12-01 1977-12-01 Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung

Publications (2)

Publication Number Publication Date
IT7852132A0 IT7852132A0 (it) 1978-11-29
IT1106372B true IT1106372B (it) 1985-11-11

Family

ID=6025036

Family Applications (1)

Application Number Title Priority Date Filing Date
IT52132/78A IT1106372B (it) 1977-12-01 1978-11-29 Procedimento per produrre silicion drogato diminuendo i danni da radiazioni

Country Status (7)

Country Link
US (1) US4260448A (it)
JP (1) JPS5814066B2 (it)
DE (1) DE2753488C2 (it)
DK (1) DK153429C (it)
FR (1) FR2410871A1 (it)
GB (1) GB2012482B (it)
IT (1) IT1106372B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JP2572051B2 (ja) * 1986-12-03 1997-01-16 東芝セラミツクス株式会社 エピタキシャル成長用シリコンウェーハ及びその製造方法
DE3714357C2 (de) * 1986-04-30 1994-02-03 Toshiba Ceramics Co Siliciumwafer und Verfahren zu dessen Herstellung und Siliziumwafer-Auswahleinrichtung
JPS62257723A (ja) * 1986-04-30 1987-11-10 Toshiba Ceramics Co Ltd シリコンウエ−ハの製造方法
US4857259A (en) * 1986-05-16 1989-08-15 Westinghouse Electric Corp. Neutron dosimeter
JPH02149362U (it) * 1989-05-24 1990-12-19
RU2145128C1 (ru) * 1998-03-19 2000-01-27 Закрытое акционерное общество "ЭЛЛИНА-НТ" СПОСОБ ПОЛУЧЕНИЯ ЯДЕРНО-ЛЕГИРОВАННОГО КРЕМНИЯ n-ТИПА (ВАРИАНТЫ)
RU2141544C1 (ru) * 1998-03-19 1999-11-20 Закрытое акционерное общество "ЭЛЛИНА - НТ" Способ термобарического отжига комплексных радиационных дефектов в ядерно-легированных полупроводниковых кристаллических веществах
US6034408A (en) * 1998-05-14 2000-03-07 International Business Machines Corporation Solid state thermal switch
KR20010070619A (ko) * 2001-05-28 2001-07-27 류근걸 중성자 변환 도핑을 위한 저항 안정화 열처리 기술
US6964917B2 (en) * 2003-04-08 2005-11-15 Cree, Inc. Semi-insulating silicon carbide produced by Neutron transmutation doping
US6974720B2 (en) * 2003-10-16 2005-12-13 Cree, Inc. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL258192A (it) * 1959-12-15
US3255050A (en) * 1962-03-23 1966-06-07 Carl N Klahr Fabrication of semiconductor devices by transmutation doping
DE1948884B2 (de) * 1969-09-27 1971-09-30 Verfahren zum beseitigen von inversionsschichten
DE2356376A1 (de) * 1973-11-12 1975-05-15 Siemens Ag Verfahren zum herstellen von homogen dotierten siliciumeinkristallen mit n-leitfaehigkeit durch neutronenbestrahlung
DE2362264B2 (de) * 1973-12-14 1977-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von homogen n-dotierten siliciumeinkristallen durch bestrahlung mit thermischen neutronen
DE2433991A1 (de) * 1974-07-15 1976-02-05 Siemens Ag Verfahren zum dotieren einer halbleiterschicht
DE2519663A1 (de) * 1975-05-02 1976-11-11 Siemens Ag Verfahren zum herstellen von direkt-beheizbaren siliciumrohren
DE2552621C3 (de) * 1975-11-24 1979-09-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstandes
US4129463A (en) * 1977-06-29 1978-12-12 The United States Of America As Represented By The United States Department Of Energy Polycrystalline silicon semiconducting material by nuclear transmutation doping

Also Published As

Publication number Publication date
IT7852132A0 (it) 1978-11-29
DK153429B (da) 1988-07-11
FR2410871B1 (it) 1982-12-10
JPS5814066B2 (ja) 1983-03-17
GB2012482B (en) 1982-05-06
DK153429C (da) 1988-12-27
FR2410871A1 (fr) 1979-06-29
DE2753488C2 (de) 1986-06-19
GB2012482A (en) 1979-07-25
JPS5477063A (en) 1979-06-20
DE2753488A1 (de) 1979-06-07
DK534978A (da) 1979-06-02
US4260448A (en) 1981-04-07

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