IT1110013B - Dispositivo di memoria a semiconduttore,di tipo non volatile e metodo di fabbricazione dello stesso - Google Patents

Dispositivo di memoria a semiconduttore,di tipo non volatile e metodo di fabbricazione dello stesso

Info

Publication number
IT1110013B
IT1110013B IT19301/79A IT1930179A IT1110013B IT 1110013 B IT1110013 B IT 1110013B IT 19301/79 A IT19301/79 A IT 19301/79A IT 1930179 A IT1930179 A IT 1930179A IT 1110013 B IT1110013 B IT 1110013B
Authority
IT
Italy
Prior art keywords
semiconductor
manufacturing
memory device
type memory
volatile type
Prior art date
Application number
IT19301/79A
Other languages
English (en)
Other versions
IT7919301A0 (it
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7919301A0 publication Critical patent/IT7919301A0/it
Application granted granted Critical
Publication of IT1110013B publication Critical patent/IT1110013B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
IT19301/79A 1978-01-30 1979-01-15 Dispositivo di memoria a semiconduttore,di tipo non volatile e metodo di fabbricazione dello stesso IT1110013B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/873,603 US4307411A (en) 1978-01-30 1978-01-30 Nonvolatile semiconductor memory device and method of its manufacture

Publications (2)

Publication Number Publication Date
IT7919301A0 IT7919301A0 (it) 1979-01-15
IT1110013B true IT1110013B (it) 1985-12-23

Family

ID=25361968

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19301/79A IT1110013B (it) 1978-01-30 1979-01-15 Dispositivo di memoria a semiconduttore,di tipo non volatile e metodo di fabbricazione dello stesso

Country Status (5)

Country Link
US (1) US4307411A (it)
JP (1) JPS54111789A (it)
DE (1) DE2902367A1 (it)
GB (1) GB2013397B (it)
IT (1) IT1110013B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353083A (en) * 1978-11-27 1982-10-05 Ncr Corporation Low voltage nonvolatile memory device
US4521796A (en) * 1980-12-11 1985-06-04 General Instrument Corporation Memory implant profile for improved channel shielding in electrically alterable read only memory semiconductor device
US4605946A (en) * 1984-08-16 1986-08-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fet charge sensor and voltage probe
US4745083A (en) * 1986-11-19 1988-05-17 Sprague Electric Company Method of making a fast IGFET
JPH07120719B2 (ja) * 1987-12-02 1995-12-20 三菱電機株式会社 半導体記憶装置
US6518617B1 (en) * 1996-12-31 2003-02-11 Sony Corporation Nonvolatile semiconductor memory device
US6200843B1 (en) 1998-09-24 2001-03-13 International Business Machines Corporation High-voltage, high performance FETs
JP4657681B2 (ja) 2004-06-03 2011-03-23 シャープ株式会社 半導体記憶装置およびその製造方法並びに携帯電子機器
US8330232B2 (en) * 2005-08-22 2012-12-11 Macronix International Co., Ltd. Nonvolatile memory device and method of forming the same
JP2016025100A (ja) * 2014-07-16 2016-02-08 株式会社Ｊｏｌｅｄ 半導体装置、表示装置および電子機器
US11094811B2 (en) * 2019-04-19 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3719866A (en) * 1970-12-03 1973-03-06 Ncr Semiconductor memory device
JPS5330310B2 (it) * 1972-09-13 1978-08-25
JPS571149B2 (it) * 1974-08-28 1982-01-09
JPS52105784A (en) * 1976-03-01 1977-09-05 Sony Corp Mios type memory unit

Also Published As

Publication number Publication date
JPS54111789A (en) 1979-09-01
GB2013397B (en) 1982-05-19
IT7919301A0 (it) 1979-01-15
GB2013397A (en) 1979-08-08
DE2902367A1 (de) 1979-08-02
US4307411A (en) 1981-12-22

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