IT1110037B - Struttura ad invertitore,ad elementi mos complementari - Google Patents

Struttura ad invertitore,ad elementi mos complementari

Info

Publication number
IT1110037B
IT1110037B IT19466/79A IT1946679A IT1110037B IT 1110037 B IT1110037 B IT 1110037B IT 19466/79 A IT19466/79 A IT 19466/79A IT 1946679 A IT1946679 A IT 1946679A IT 1110037 B IT1110037 B IT 1110037B
Authority
IT
Italy
Prior art keywords
complementary mos
inverter structure
mos elements
elements
inverter
Prior art date
Application number
IT19466/79A
Other languages
English (en)
Other versions
IT7919466A0 (it
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7919466A0 publication Critical patent/IT7919466A0/it
Application granted granted Critical
Publication of IT1110037B publication Critical patent/IT1110037B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
IT19466/79A 1978-01-30 1979-01-19 Struttura ad invertitore,ad elementi mos complementari IT1110037B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/873,593 US4178605A (en) 1978-01-30 1978-01-30 Complementary MOS inverter structure

Publications (2)

Publication Number Publication Date
IT7919466A0 IT7919466A0 (it) 1979-01-19
IT1110037B true IT1110037B (it) 1985-12-23

Family

ID=25361949

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19466/79A IT1110037B (it) 1978-01-30 1979-01-19 Struttura ad invertitore,ad elementi mos complementari

Country Status (5)

Country Link
US (1) US4178605A (it)
JP (2) JPS54114088A (it)
DE (1) DE2902368A1 (it)
GB (1) GB2013396B (it)
IT (1) IT1110037B (it)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54161894A (en) * 1978-06-13 1979-12-21 Toshiba Corp Manufacture of semiconductor device
US4489340A (en) * 1980-02-04 1984-12-18 Nippon Telegraph & Telephone Public Corporation PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
JPS5846193B2 (ja) * 1980-07-15 1983-10-14 株式会社東芝 半導体装置
JPS58222558A (ja) * 1982-06-18 1983-12-24 Hitachi Ltd 半導体装置
JPS6065547A (ja) * 1983-09-20 1985-04-15 Sharp Corp 半導体装置
NL8303441A (nl) * 1983-10-07 1985-05-01 Philips Nv Geintegreerde schakeling met komplementaire veldeffekttransistors.
US4804636A (en) * 1985-05-01 1989-02-14 Texas Instruments Incorporated Process for making integrated circuits having titanium nitride triple interconnect
US4811078A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Integrated circuit device and process with tin capacitors
CN1034533C (zh) * 1985-05-01 1997-04-09 得克萨斯仪器公司 超大规模集成电路静态随机存储器
US4821085A (en) * 1985-05-01 1989-04-11 Texas Instruments Incorporated VLSI local interconnect structure
US4975756A (en) * 1985-05-01 1990-12-04 Texas Instruments Incorporated SRAM with local interconnect
EP0251682A3 (en) * 1986-06-25 1989-12-06 Hewlett-Packard Company Integrated bipolar-mos device
US5028564A (en) * 1989-04-27 1991-07-02 Chang Chen Chi P Edge doping processes for mesa structures in SOS and SOI devices
JPH11338439A (ja) 1998-03-27 1999-12-10 Semiconductor Energy Lab Co Ltd 半導体表示装置の駆動回路および半導体表示装置
US6235630B1 (en) * 1998-08-19 2001-05-22 Micron Technology, Inc. Silicide pattern structures and methods of fabricating the same
KR100275965B1 (ko) * 1999-01-22 2000-12-15 김영환 반도체 장치의 제조방법
US6426534B1 (en) 2000-05-01 2002-07-30 Xilinx, Inc. Methods and circuits employing threshold voltages for mask-alignment detection
JP2004253541A (ja) * 2003-02-19 2004-09-09 Ricoh Co Ltd 半導体装置
US8067287B2 (en) * 2008-02-25 2011-11-29 Infineon Technologies Ag Asymmetric segmented channel transistors
SE533026C2 (sv) * 2008-04-04 2010-06-08 Klas-Haakan Eklund Fälteffekttransistor med isolerad gate seriekopplad med en JFET
US10608624B2 (en) 2017-05-25 2020-03-31 Solaredge Technologies Ltd. Efficient switching circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436622A (en) * 1966-12-20 1969-04-01 Texas Instruments Inc Compound channel insulated gate triode
US3641405A (en) * 1967-10-13 1972-02-08 Gen Electric Field-effect transistors with superior passivating films and method of making same
FR2121935A5 (it) * 1971-01-12 1972-08-25 Sescosem
JPS5145438B1 (it) * 1971-06-25 1976-12-03
US3872491A (en) * 1973-03-08 1975-03-18 Sprague Electric Co Asymmetrical dual-gate FET
US3898105A (en) * 1973-10-25 1975-08-05 Mostek Corp Method for making FET circuits
US4052229A (en) * 1976-06-25 1977-10-04 Intel Corporation Process for preparing a substrate for mos devices of different thresholds
US4078947A (en) * 1976-08-05 1978-03-14 International Business Machines Corporation Method for forming a narrow channel length MOS field effect transistor

Also Published As

Publication number Publication date
JPS54114088A (en) 1979-09-05
IT7919466A0 (it) 1979-01-19
GB2013396B (en) 1982-06-03
US4178605A (en) 1979-12-11
GB2013396A (en) 1979-08-08
JPS59189345U (ja) 1984-12-15
DE2902368A1 (de) 1979-08-02

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