IT1124916B - Fotodiodo di lega quaternaria di elementi dei gruppi iii-v - Google Patents

Fotodiodo di lega quaternaria di elementi dei gruppi iii-v

Info

Publication number
IT1124916B
IT1124916B IT27044/79A IT2704479A IT1124916B IT 1124916 B IT1124916 B IT 1124916B IT 27044/79 A IT27044/79 A IT 27044/79A IT 2704479 A IT2704479 A IT 2704479A IT 1124916 B IT1124916 B IT 1124916B
Authority
IT
Italy
Prior art keywords
photodiod
elements
groups iii
quaternary alloy
quaternary
Prior art date
Application number
IT27044/79A
Other languages
English (en)
Other versions
IT7927044A0 (it
Inventor
Henry Kressel
Gregorj Hammond Olsen
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7927044A0 publication Critical patent/IT7927044A0/it
Application granted granted Critical
Publication of IT1124916B publication Critical patent/IT1124916B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
IT27044/79A 1979-04-02 1979-11-05 Fotodiodo di lega quaternaria di elementi dei gruppi iii-v IT1124916B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/026,369 US4328508A (en) 1979-04-02 1979-04-02 III-V Quaternary alloy photodiode

Publications (2)

Publication Number Publication Date
IT7927044A0 IT7927044A0 (it) 1979-11-05
IT1124916B true IT1124916B (it) 1986-05-14

Family

ID=21831411

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27044/79A IT1124916B (it) 1979-04-02 1979-11-05 Fotodiodo di lega quaternaria di elementi dei gruppi iii-v

Country Status (7)

Country Link
US (1) US4328508A (it)
JP (1) JPS55132080A (it)
CA (1) CA1149497A (it)
DE (1) DE2947805A1 (it)
FR (1) FR2453503A1 (it)
GB (1) GB2046013A (it)
IT (1) IT1124916B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900000074B1 (ko) * 1981-10-02 1990-01-19 미쓰다 가쓰시게 광 검출용 반도체장치
US4544938A (en) * 1982-11-18 1985-10-01 Codenoll Technology Corporation Wavelength-selective photodetector
EP0216572B1 (en) * 1985-09-24 1995-04-05 Kabushiki Kaisha Toshiba Semiconductor photo-detector having a two-stepped impurity profile
US4717631A (en) * 1986-01-16 1988-01-05 Rca Corporation Silicon oxynitride passivated semiconductor body and method of making same
US4761680A (en) * 1986-09-29 1988-08-02 General Electric Company Photodetector
US7679805B2 (en) * 2007-07-11 2010-03-16 Cubic Corporation Flip chip quantum well modulator
CN116325165A (zh) * 2020-12-11 2023-06-23 Ams-欧司朗有限公司 具有高响应度的光电二极管器件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1229093B (de) 1963-01-23 1966-11-24 Basf Ag Verfahren zur Herstellung von Hexahydropyrimidinderivaten
JPS5321275B2 (it) 1972-03-13 1978-07-01
FR2192379B1 (it) * 1972-07-10 1977-07-22 Radiotechnique Compelec
US3982261A (en) * 1972-09-22 1976-09-21 Varian Associates Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode
US3860945A (en) * 1973-03-29 1975-01-14 Rca Corp High frequency voltage-variable capacitor
US4116733A (en) * 1977-10-06 1978-09-26 Rca Corporation Vapor phase growth technique of III-V compounds utilizing a preheating step
US4195305A (en) * 1978-09-25 1980-03-25 Varian Associates, Inc. Lattice constant grading in the Aly Ga1-y As1-x Sbx alloy system
US4258375A (en) * 1979-04-09 1981-03-24 Massachusetts Institute Of Technology Gax In1-x Asy P1-y /InP Avalanche photodiode and method for its fabrication
US4237471A (en) * 1979-06-22 1980-12-02 Hamamatsu Corporation Method of producing a semiconductor photodiode of indium antimonide and device thereof

Also Published As

Publication number Publication date
JPS55132080A (en) 1980-10-14
DE2947805A1 (de) 1980-10-23
IT7927044A0 (it) 1979-11-05
FR2453503A1 (fr) 1980-10-31
US4328508A (en) 1982-05-04
GB2046013A (en) 1980-11-05
CA1149497A (en) 1983-07-05

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