IT1149266B - Cella di memoria perfezionata - Google Patents

Cella di memoria perfezionata

Info

Publication number
IT1149266B
IT1149266B IT25973/80A IT2597380A IT1149266B IT 1149266 B IT1149266 B IT 1149266B IT 25973/80 A IT25973/80 A IT 25973/80A IT 2597380 A IT2597380 A IT 2597380A IT 1149266 B IT1149266 B IT 1149266B
Authority
IT
Italy
Prior art keywords
perfected
memory cell
cell
memory
perfected memory
Prior art date
Application number
IT25973/80A
Other languages
English (en)
Other versions
IT8025973A0 (it
Inventor
David Barry Eardley
Richard Edward Matick
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT8025973A0 publication Critical patent/IT8025973A0/it
Application granted granted Critical
Publication of IT1149266B publication Critical patent/IT1149266B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
IT25973/80A 1979-12-28 1980-11-14 Cella di memoria perfezionata IT1149266B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/108,070 US4287575A (en) 1979-12-28 1979-12-28 High speed high density, multi-port random access memory cell

Publications (2)

Publication Number Publication Date
IT8025973A0 IT8025973A0 (it) 1980-11-14
IT1149266B true IT1149266B (it) 1986-12-03

Family

ID=22320118

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25973/80A IT1149266B (it) 1979-12-28 1980-11-14 Cella di memoria perfezionata

Country Status (4)

Country Link
US (1) US4287575A (it)
EP (1) EP0031488A3 (it)
JP (1) JPS5698779A (it)
IT (1) IT1149266B (it)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052669B1 (de) * 1980-11-26 1985-03-27 Ibm Deutschland Gmbh Mehrfach adressierbarer hochintegrierter Halbleiterspeicher
US4491937A (en) * 1982-02-25 1985-01-01 Trw Inc. Multiport register file
US4541076A (en) * 1982-05-13 1985-09-10 Storage Technology Corporation Dual port CMOS random access memory
JPS58211392A (ja) * 1982-05-31 1983-12-08 Toshiba Corp 半導体記憶装置
FR2528614B1 (fr) * 1982-06-15 1986-06-20 Dshkhunian Valery Memoire a transistors
JPS5998365A (ja) * 1982-11-27 1984-06-06 Shigeto Suzuki 複数同時アクセス型記憶装置
US4554645A (en) * 1983-03-10 1985-11-19 International Business Machines Corporation Multi-port register implementation
US4575821A (en) * 1983-05-09 1986-03-11 Rockwell International Corporation Low power, high speed random access memory circuit
US4570090A (en) * 1983-06-30 1986-02-11 International Business Machines Corporation High-speed sense amplifier circuit with inhibit capability
US4580245A (en) * 1983-07-28 1986-04-01 Sperry Corporation Complementary metal oxide semiconductor dual port random access memory cell
US4596002A (en) * 1984-06-25 1986-06-17 International Business Machines Corporation Random access memory RAM employing complementary transistor switch (CTS) memory cells
US4598390A (en) * 1984-06-25 1986-07-01 International Business Machines Corporation Random access memory RAM employing complementary transistor switch (CTS) memory cells
US4578779A (en) * 1984-06-25 1986-03-25 International Business Machines Corporation Voltage mode operation scheme for bipolar arrays
US4610004A (en) 1984-10-10 1986-09-02 Advanced Micro Devices, Inc. Expandable four-port register file
US4623990A (en) 1984-10-31 1986-11-18 Advanced Micro Devices, Inc. Dual-port read/write RAM with single array
JPS63244393A (ja) * 1987-03-30 1988-10-11 Nec Corp 並列入出力回路を有する記憶装置
JP2600304B2 (ja) * 1988-06-30 1997-04-16 三菱電機株式会社 半導体記憶装置とこれを用いたデータパス
US4933909A (en) * 1988-12-19 1990-06-12 Bull Hn Information Systems Inc. Dual read/write register file memory
US5142540A (en) * 1990-03-13 1992-08-25 Glasser Lance A Multipart memory apparatus with error detection
GB2247550B (en) * 1990-06-29 1994-08-03 Digital Equipment Corp Bipolar transistor memory cell and method
US5365117A (en) * 1993-03-05 1994-11-15 International Business Machines Corporation Logic gates having fast logic signal paths through switchable capacitors
US6104663A (en) * 1999-01-06 2000-08-15 Virage Logic Corp. Memory array with a simultaneous read or simultaneous write ports
FR2864321B1 (fr) * 2003-12-23 2007-01-19 St Microelectronics Sa Memoire dynamique a acces aleatoire ou dram comportant au moins deux registres tampons et procede de commande d'une telle memoire
DE102014114197B4 (de) * 2014-09-30 2016-11-17 Infineon Technologies Ag Chip und Verfahren zum Identifizieren eines Chips

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1453354A (fr) * 1965-07-13 1966-06-03 Labo Cent Telecommunicat Mémoire rapide à basculateurs
US3675218A (en) * 1970-01-15 1972-07-04 Ibm Independent read-write monolithic memory array
US3761898A (en) * 1971-03-05 1973-09-25 Raytheon Co Random access memory
US3979735A (en) * 1973-12-13 1976-09-07 Rca Corporation Information storage circuit
US3968480A (en) * 1974-04-25 1976-07-06 Honeywell Inc. Memory cell
GB1565146A (en) * 1976-08-16 1980-04-16 Fairchild Camera Instr Co Random access momory cells
US4070657A (en) * 1977-01-03 1978-01-24 Honeywell Information Systems Inc. Current mode simultaneous dual-read/single-write memory device
US4127899A (en) * 1977-12-05 1978-11-28 International Business Machines Corporation Self-quenching memory cell
US4193127A (en) * 1979-01-02 1980-03-11 International Business Machines Corporation Simultaneous read/write cell

Also Published As

Publication number Publication date
EP0031488A3 (en) 1981-07-15
EP0031488A2 (en) 1981-07-08
JPS5698779A (en) 1981-08-08
IT8025973A0 (it) 1980-11-14
US4287575A (en) 1981-09-01

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