IT1150836B - Dispositivo semiconduttore ad effetto di campo - Google Patents
Dispositivo semiconduttore ad effetto di campoInfo
- Publication number
- IT1150836B IT1150836B IT20692/82A IT2069282A IT1150836B IT 1150836 B IT1150836 B IT 1150836B IT 20692/82 A IT20692/82 A IT 20692/82A IT 2069282 A IT2069282 A IT 2069282A IT 1150836 B IT1150836 B IT 1150836B
- Authority
- IT
- Italy
- Prior art keywords
- field
- semiconductive device
- effect
- effect semiconductive
- semiconductive
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25508381A | 1981-04-17 | 1981-04-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8220692A0 IT8220692A0 (it) | 1982-04-13 |
| IT1150836B true IT1150836B (it) | 1986-12-17 |
Family
ID=22966761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT20692/82A IT1150836B (it) | 1981-04-17 | 1982-04-13 | Dispositivo semiconduttore ad effetto di campo |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS57181171A (it) |
| DE (1) | DE3213772A1 (it) |
| GB (1) | GB2097188A (it) |
| IT (1) | IT1150836B (it) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0264564B1 (de) * | 1986-09-30 | 1992-11-11 | Siemens Aktiengesellschaft | Silizium-Temperatursensor |
| JPS6453476A (en) * | 1987-08-24 | 1989-03-01 | Nippon Telegraph & Telephone | Superconducting three-terminal element and manufacture thereof |
| EP0435541A3 (en) * | 1989-12-26 | 1991-07-31 | Motorola Inc. | Semiconductor device having internal current limit overvoltage protection |
| US5309007A (en) * | 1991-09-30 | 1994-05-03 | The United States Of America As Represented By The Secretary Of The Navy | Junction field effect transistor with lateral gate voltage swing (GVS-JFET) |
| US7026669B2 (en) * | 2004-06-03 | 2006-04-11 | Ranbir Singh | Lateral channel transistor |
-
1982
- 1982-04-13 IT IT20692/82A patent/IT1150836B/it active
- 1982-04-14 DE DE19823213772 patent/DE3213772A1/de not_active Withdrawn
- 1982-04-15 GB GB8211030A patent/GB2097188A/en not_active Withdrawn
- 1982-04-16 JP JP57062643A patent/JPS57181171A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2097188A (en) | 1982-10-27 |
| DE3213772A1 (de) | 1982-11-25 |
| JPS57181171A (en) | 1982-11-08 |
| IT8220692A0 (it) | 1982-04-13 |
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