IT1157901B - Procedimento per produrre foglie di silicio policristallino sinterizzato - Google Patents

Procedimento per produrre foglie di silicio policristallino sinterizzato

Info

Publication number: IT1157901B
Authority: IT; Italy
Prior art keywords: procedure; polycrystalline silicon; producing sintered; sintered polycrystalline; silicon leaves
Prior art date: 1981-01-13

Application number

IT19003/82A

Other languages

English (en)

Other versions

IT8219003A1 (it

IT8219003A0 (it

Inventor

Leopold Hanke

Hans Hellebrand

Helmut Schmelz

Original Assignee

Siemens Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-01-13

Filing date

1982-01-05

Publication date

1987-02-18

1982-01-05 Application filed by Siemens Ag filed Critical Siemens Ag

1982-01-05 Publication of IT8219003A0 publication Critical patent/IT8219003A0/it

1983-07-05 Publication of IT8219003A1 publication Critical patent/IT8219003A1/it

1987-02-18 Application granted granted Critical

1987-02-18 Publication of IT1157901B publication Critical patent/IT1157901B/it

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Physics & Mathematics (AREA)
Thermal Sciences (AREA)
Silicon Compounds (AREA)
Photovoltaic Devices (AREA)
Compositions Of Oxide Ceramics (AREA)

IT19003/82A 1981-01-13 1982-01-05 Procedimento per produrre foglie di silicio policristallino sinterizzato IT1157901B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE19813100776 DE3100776A1 (de)	1981-01-13	1981-01-13	Verfahren zur herstellung von folien aus gesintertem polykristallinen silizium

Publications (3)

Publication Number	Publication Date
IT8219003A0 IT8219003A0 (it)	1982-01-05
IT8219003A1 IT8219003A1 (it)	1983-07-05
IT1157901B true IT1157901B (it)	1987-02-18

Family

ID=6122514

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT19003/82A IT1157901B (it)	1981-01-13	1982-01-05	Procedimento per produrre foglie di silicio policristallino sinterizzato

Country Status (5)

Country	Link
US (1)	US4407858A (it)
JP (1)	JPS57135709A (it)
DE (1)	DE3100776A1 (it)
FR (1)	FR2497836B1 (it)
IT (1)	IT1157901B (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CA2016457C (en) *	1989-09-29	2001-12-18	Gary Mats Renlund	Moldable ceramic composition and process for fine diameter ceramic fibers
US5559057A (en) *	1994-03-24	1996-09-24	Starfire Electgronic Development & Marketing Ltd.	Method for depositing and patterning thin films formed by fusing nanocrystalline precursors
US5576248A (en) *	1994-03-24	1996-11-19	Starfire Electronic Development & Marketing, Ltd.	Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
JPH11260721A (ja) *	1998-03-13	1999-09-24	Toshiba Corp	多結晶薄膜シリコン層の形成方法および太陽光発電素子
US6638491B2 (en) *	2001-09-21	2003-10-28	Neptec Optical Solutions, Inc.	Method of producing silicon metal particulates of reduced average particle size
FR2832253B1 (fr) *	2001-11-12	2005-05-27	Michelis Quiriconi Raymond De	Cellule solaire a base de (se) (si) iridium appauvri
US7879696B2 (en) *	2003-07-08	2011-02-01	Kovio, Inc.	Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
WO2008060704A2 (en) *	2006-06-02	2008-05-22	Innovalight, Inc.	Photoactive materials containing group iv nanostructures and optoelectronic devices made therefrom
WO2008030966A1 (en) *	2006-09-07	2008-03-13	Innovalight, Inc.	Semiconductor thin films formed from group iv nanoparticles
US7776724B2 (en) *	2006-12-07	2010-08-17	Innovalight, Inc.	Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material
US7718707B2 (en) *	2006-12-21	2010-05-18	Innovalight, Inc.	Method for preparing nanoparticle thin films
EP2140483A1 (en) *	2007-04-04	2010-01-06	Innovalight, Inc.	Methods for optimizing thin film formation with reactive gases
WO2009028974A1 (en) *	2007-08-31	2009-03-05	Faculdade De Ciências Da Universidade De Lisboa	Method for the production of semiconductor ribbons from a gaseous feedstock
US7851336B2 (en) *	2008-03-13	2010-12-14	Innovalight, Inc.	Method of forming a passivated densified nanoparticle thin film on a substrate
US8247312B2 (en) *	2008-04-24	2012-08-21	Innovalight, Inc.	Methods for printing an ink on a textured wafer surface
GB0919830D0 (en) *	2009-11-12	2009-12-30	Isis Innovation	Preparation of silicon for fast generation of hydrogen through reaction with water
GB201217525D0 (en)	2012-10-01	2012-11-14	Isis Innovation	Composition for hydrogen generation
DE102017221724A1 (de)	2017-12-01	2019-06-06	Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.	Verfahren zur Herstellung von polykristallinem Silizium

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2904613A (en) *	1957-08-26	1959-09-15	Hoffman Electronics Corp	Large area solar energy converter and method for making the same
US4173494A (en) *	1977-02-14	1979-11-06	Jack S. Kilby	Glass support light energy converter
DE2927086C2 (de) *	1979-07-04	1987-02-05	Siemens AG, 1000 Berlin und 8000 München	Verfahren zum Herstellen von platten- oder bandförmigen Siliziumkristallkörpern mit Säulenstruktur für Solarzellen

1981
- 1981-01-13 DE DE19813100776 patent/DE3100776A1/de not_active Withdrawn
- 1981-12-29 US US06/335,587 patent/US4407858A/en not_active Expired - Fee Related
1982
- 1982-01-05 IT IT19003/82A patent/IT1157901B/it active
- 1982-01-06 FR FR8200099A patent/FR2497836B1/fr not_active Expired
- 1982-01-08 JP JP57001682A patent/JPS57135709A/ja active Pending

Also Published As

Publication number	Publication date
IT8219003A1 (it)	1983-07-05
DE3100776A1 (de)	1982-08-12
JPS57135709A (en)	1982-08-21
FR2497836A1 (fr)	1982-07-16
FR2497836B1 (fr)	1986-02-21
IT8219003A0 (it)	1982-01-05
US4407858A (en)	1983-10-04

Publication	Publication Date	Title
IT1157901B (it)	1987-02-18	Procedimento per produrre foglie di silicio policristallino sinterizzato
GB2122179B (en)	1985-10-02	Producing silicon carbide bodies
GB8413468D0 (en)	1984-07-04	Sintered silicon carbide
IT1224088B (it)	1990-09-26	Struttura di cornice per fotografie
GB2082165B (en)	1984-03-28	Silicon carbide ceramic
GB8622195D0 (en)	1986-10-22	Preparing polycrystalline silicon
IS2877A7 (is)	1984-08-08	Aðferð til að framleiða hreinan kísilmálm
JPS57148378A (en)	1982-09-13	High temperature laminar silicon structure
IT1152146B (it)	1986-12-31	Procedimento per la produzione di nerofumo
IT7922753A0 (it)	1979-05-17	Procedimento per la produzione di silicio policristallino.
IT1190885B (it)	1988-02-24	Gruppo alettato per la collocazione di cateteri
DE3266050D1 (en)	1985-10-10	Method for sintering silicon nitride
GB2104103B (en)	1986-02-12	Forming shaped silicon carbide bodies
DE3471398D1 (en)	1988-06-23	Adjustable monolithic ceramic capacitor
GB8321576D0 (en)	1983-09-14	Silicon carbide whisker production
IT1154275B (it)	1987-01-21	Procedimento per la produzione di disolfuri di tiurame
DE3262765D1 (en)	1985-05-02	Making silicon carbide bodies
IT1153125B (it)	1987-01-14	Procedimento per produrre gesso
FI823782L (fi)	1983-05-11	Regleranordning foer elektrisk kokplatta
FR2516147B1 (fr)	1989-05-05	Penture reglable
GB2109297B (en)	1985-08-21	Producing ceramic parts
JPS57160975A (en)	1982-10-04	Ceramics sintering method
FI820878L (fi)	1982-09-17	Regleranordning foer uppvaermningsanlaeggningar
JPS5722173A (en)	1982-02-05	Silicon carbide ceramics
JPS57209887A (en)	1982-12-23	Method of sintering silicon nitride