IT1165430B - Processo di attacco di cromo medinate scarica a bagliore - Google Patents

Processo di attacco di cromo medinate scarica a bagliore

Info

Publication number
IT1165430B
IT1165430B IT28126/79A IT2812679A IT1165430B IT 1165430 B IT1165430 B IT 1165430B IT 28126/79 A IT28126/79 A IT 28126/79A IT 2812679 A IT2812679 A IT 2812679A IT 1165430 B IT1165430 B IT 1165430B
Authority
IT
Italy
Prior art keywords
medinate
bagliore
chrome
attack process
process download
Prior art date
Application number
IT28126/79A
Other languages
English (en)
Other versions
IT7928126A0 (it
Inventor
George Tein-Chu Chiu
James Robert Kitcher
Gunars Miervaldis Ozols
Bryant Nils Zingerman
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7928126A0 publication Critical patent/IT7928126A0/it
Application granted granted Critical
Publication of IT1165430B publication Critical patent/IT1165430B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
IT28126/79A 1978-12-26 1979-12-18 Processo di attacco di cromo medinate scarica a bagliore IT1165430B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/972,844 US4229247A (en) 1978-12-26 1978-12-26 Glow discharge etching process for chromium

Publications (2)

Publication Number Publication Date
IT7928126A0 IT7928126A0 (it) 1979-12-18
IT1165430B true IT1165430B (it) 1987-04-22

Family

ID=25520214

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28126/79A IT1165430B (it) 1978-12-26 1979-12-18 Processo di attacco di cromo medinate scarica a bagliore

Country Status (6)

Country Link
US (1) US4229247A (it)
EP (1) EP0013711B1 (it)
JP (1) JPS5589474A (it)
CA (1) CA1120888A (it)
DE (1) DE2966686D1 (it)
IT (1) IT1165430B (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3045922A1 (de) * 1980-12-05 1982-07-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von strukturen von aus siliziden oder aus silizid-polysilizium bestehenden schichten durch reaktives sputteraetzen
US4353777A (en) * 1981-04-20 1982-10-12 Lfe Corporation Selective plasma polysilicon etching
US4445966A (en) * 1983-06-20 1984-05-01 Honeywell Inc. Method of plasma etching of films containing chromium
US4931261A (en) * 1987-02-25 1990-06-05 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4925524A (en) * 1987-06-12 1990-05-15 Hewlett-Packard Company Method for forming tungsten structures in a semiconductor
USH596H (en) 1988-02-16 1989-03-07 The United States Of America As Represented By The Secretary Of The Army Method of etching titanium diboride
JP2831646B2 (ja) * 1988-03-25 1998-12-02 株式会社東芝 半導体装置の製造方法
ATE109924T1 (de) * 1989-11-03 1994-08-15 Asm Int Verfahren zum ätzen von halbleiterscheiben mit halogenid in gegenwart von wasser.
JP3013446B2 (ja) * 1990-12-28 2000-02-28 ソニー株式会社 ドライエッチング方法
US6355979B2 (en) * 1999-05-25 2002-03-12 Stmicroelectronics, Inc. Hard mask for copper plasma etch
US9001463B2 (en) 2012-08-31 2015-04-07 International Business Machines Corporaton Magnetic recording head having protected reader sensors and near zero recessed write poles
US9349395B2 (en) * 2012-08-31 2016-05-24 International Business Machines Corporation System and method for differential etching

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
US3951709A (en) * 1974-02-28 1976-04-20 Lfe Corporation Process and material for semiconductor photomask fabrication
JPS5150244A (en) * 1974-10-29 1976-05-01 Tokyo Ohka Kogyo Co Ltd Kuromuno purazumaetsuchinguhoho
US3975252A (en) * 1975-03-14 1976-08-17 Bell Telephone Laboratories, Incorporated High-resolution sputter etching
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
US4172004A (en) * 1977-10-20 1979-10-23 International Business Machines Corporation Method for forming dense dry etched multi-level metallurgy with non-overlapped vias
JPS5494196A (en) * 1977-12-30 1979-07-25 Ibm Metallic layer removing method

Also Published As

Publication number Publication date
EP0013711A2 (de) 1980-08-06
JPS5641701B2 (it) 1981-09-30
EP0013711A3 (en) 1981-09-16
DE2966686D1 (en) 1984-03-22
EP0013711B1 (de) 1984-02-15
JPS5589474A (en) 1980-07-07
IT7928126A0 (it) 1979-12-18
US4229247A (en) 1980-10-21
CA1120888A (en) 1982-03-30

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