IT1171840B - Procedimento a bassa temperatura per il deposito di strati epitassiali - Google Patents

Procedimento a bassa temperatura per il deposito di strati epitassiali

Info

Publication number
IT1171840B
IT1171840B IT48516/83A IT4851683A IT1171840B IT 1171840 B IT1171840 B IT 1171840B IT 48516/83 A IT48516/83 A IT 48516/83A IT 4851683 A IT4851683 A IT 4851683A IT 1171840 B IT1171840 B IT 1171840B
Authority
IT
Italy
Prior art keywords
deposit
low temperature
epitaxial layers
temperature procedure
procedure
Prior art date
Application number
IT48516/83A
Other languages
English (en)
Other versions
IT8348516A1 (it
IT8348516A0 (it
Inventor
John W Peters
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IT8348516A0 publication Critical patent/IT8348516A0/it
Publication of IT8348516A1 publication Critical patent/IT8348516A1/it
Application granted granted Critical
Publication of IT1171840B publication Critical patent/IT1171840B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
IT48516/83A 1982-06-22 1983-06-16 Procedimento a bassa temperatura per il deposito di strati epitassiali IT1171840B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39107382A 1982-06-22 1982-06-22

Publications (3)

Publication Number Publication Date
IT8348516A0 IT8348516A0 (it) 1983-06-16
IT8348516A1 IT8348516A1 (it) 1984-12-16
IT1171840B true IT1171840B (it) 1987-06-10

Family

ID=23545109

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48516/83A IT1171840B (it) 1982-06-22 1983-06-16 Procedimento a bassa temperatura per il deposito di strati epitassiali

Country Status (12)

Country Link
US (1) US4623426A (it)
EP (1) EP0111510B1 (it)
KR (1) KR840005277A (it)
AU (1) AU559363B2 (it)
CA (1) CA1201219A (it)
DE (1) DE3375590D1 (it)
DK (1) DK84384D0 (it)
IL (1) IL68637A0 (it)
IT (1) IT1171840B (it)
PH (1) PH21544A (it)
WO (1) WO1984000178A1 (it)
ZA (1) ZA833349B (it)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8428032D0 (en) * 1984-11-06 1984-12-12 Secr Defence Growth of crystalline layers
US4811684A (en) * 1984-11-26 1989-03-14 Semiconductor Energy Laboratory Co., Ltd. Photo CVD apparatus, with deposition prevention in light source chamber
DE3684539D1 (de) * 1985-09-06 1992-04-30 Philips Nv Herstellungsverfahren einer halbleitervorrichtung.
DE3810245A1 (de) * 1987-03-27 1988-10-06 Japan Incubator Inc Lichtemittierendes element und verfahren zu seiner herstellung
US4885067A (en) * 1987-08-31 1989-12-05 Santa Barbara Research Center In-situ generation of volatile compounds for chemical vapor deposition
US5032374A (en) * 1987-10-22 1991-07-16 Hughes Aircraft Company Preparation of metal sulfides
JPH0314305A (ja) * 1989-06-13 1991-01-23 Murata Mfg Co Ltd 弾性表面波装置の製造方法
US5098857A (en) * 1989-12-22 1992-03-24 International Business Machines Corp. Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy
US5385850A (en) * 1991-02-07 1995-01-31 International Business Machines Corporation Method of forming a doped region in a semiconductor substrate utilizing a sacrificial epitaxial silicon layer
JP3198691B2 (ja) * 1993-01-14 2001-08-13 株式会社村田製作所 酸化亜鉛圧電結晶膜
US5728224A (en) * 1995-09-13 1998-03-17 Tetra Laval Holdings & Finance S.A. Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate
US6071561A (en) * 1997-08-13 2000-06-06 President And Fellows Of Harvard College Chemical vapor deposition of fluorine-doped zinc oxide
RU2139596C1 (ru) * 1998-07-27 1999-10-10 Институт физики Дагестанского научного центра РАН Способ получения монокристаллических слоев оксида цинка на неориентирующих подложках
JP3826165B2 (ja) 2000-03-27 2006-09-27 株式会社 東北テクノアーチ 酸化亜鉛半導体材料の製造方法
KR100368318B1 (ko) * 2000-12-29 2003-01-24 주식회사 하이닉스반도체 반도체 소자의 선택적 에피택셜 성장법
ATE297099T1 (de) * 2001-02-13 2005-06-15 Koninkl Philips Electronics Nv Verfahren zur codierung und decodierung von bewegungsschätzungen
JP2003063893A (ja) * 2001-06-15 2003-03-05 Murata Mfg Co Ltd ＺｎＯ／サファイア基板及びその製造方法
JP4817350B2 (ja) 2001-07-19 2011-11-16 株式会社 東北テクノアーチ 酸化亜鉛半導体部材の製造方法
US6846731B2 (en) * 2002-01-04 2005-01-25 Rutgers, The State University Of New Jersey Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films
JP5780981B2 (ja) * 2012-03-02 2015-09-16 東京エレクトロン株式会社 ゲルマニウム薄膜の成膜方法
CN114645321B (zh) * 2022-03-24 2023-04-11 电子科技大学 一种Co9S8单晶过渡金属硫化物薄膜的制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3200018A (en) * 1962-01-29 1965-08-10 Hughes Aircraft Co Controlled epitaxial crystal growth by focusing electromagnetic radiation
US3920860A (en) * 1970-09-28 1975-11-18 Siemens Ag Method for producing mixed crystal layers from cds and cdse
JPS5154770A (ja) * 1974-11-08 1976-05-14 Fujitsu Ltd Kisoseichoho
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite
US4333792A (en) * 1977-01-03 1982-06-08 Massachusetts Institute Of Technology Enhancing epitaxy and preferred orientation
FR2454184A1 (fr) * 1979-04-10 1980-11-07 Chemla Daniel Structure de type isolant-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et l'isolant un sulfure, et procedes de fabrication de cette structure
EP0030798B1 (en) * 1979-12-17 1983-12-28 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition
US4371587A (en) * 1979-12-17 1983-02-01 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition
US4297189A (en) * 1980-06-27 1981-10-27 Rockwell International Corporation Deposition of ordered crystalline films
US4447469A (en) * 1982-06-10 1984-05-08 Hughes Aircraft Company Process for forming sulfide layers by photochemical vapor deposition

Also Published As

Publication number Publication date
EP0111510B1 (en) 1988-02-03
KR840005277A (ko) 1984-11-05
DK84384A (da) 1984-02-21
IL68637A0 (en) 1983-09-30
CA1201219A (en) 1986-02-25
ZA833349B (en) 1984-02-29
IT8348516A1 (it) 1984-12-16
AU1601083A (en) 1984-01-26
US4623426A (en) 1986-11-18
DE3375590D1 (en) 1988-03-10
DK84384D0 (da) 1984-02-21
AU559363B2 (en) 1987-03-05
EP0111510A1 (en) 1984-06-27
IT8348516A0 (it) 1983-06-16
PH21544A (en) 1987-11-16
WO1984000178A1 (en) 1984-01-19

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