IT1174192B - Metodo di fabbricazione di mosfet - Google Patents

Metodo di fabbricazione di mosfet

Info

Publication number
IT1174192B
IT1174192B IT8421384A IT2138484A IT1174192B IT 1174192 B IT1174192 B IT 1174192B IT 8421384 A IT8421384 A IT 8421384A IT 2138484 A IT2138484 A IT 2138484A IT 1174192 B IT1174192 B IT 1174192B
Authority
IT
Italy
Prior art keywords
mosfet manufacturing
mosfet
manufacturing
Prior art date
Application number
IT8421384A
Other languages
English (en)
Other versions
IT8421384A1 (it
IT8421384A0 (it
Inventor
Alfred Charles Ipri
Lubomir Leon Jastrzebski
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8421384A0 publication Critical patent/IT8421384A0/it
Publication of IT8421384A1 publication Critical patent/IT8421384A1/it
Application granted granted Critical
Publication of IT1174192B publication Critical patent/IT1174192B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/018—Manufacture or treatment of isolation regions comprising dielectric materials using selective deposition of crystalline silicon, e.g. using epitaxial growth of silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
IT8421384A 1983-06-22 1984-06-13 Metodo di fabbricazione di mosfet IT1174192B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50680483A 1983-06-22 1983-06-22

Publications (3)

Publication Number Publication Date
IT8421384A0 IT8421384A0 (it) 1984-06-13
IT8421384A1 IT8421384A1 (it) 1985-12-13
IT1174192B true IT1174192B (it) 1987-07-01

Family

ID=24016078

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8421384A IT1174192B (it) 1983-06-22 1984-06-13 Metodo di fabbricazione di mosfet

Country Status (5)

Country Link
DE (1) DE3422495A1 (it)
FR (1) FR2549294A1 (it)
GB (1) GB2142185A (it)
IT (1) IT1174192B (it)
SE (1) SE8403302L (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4942449A (en) * 1988-03-28 1990-07-17 General Electric Company Fabrication method and structure for field isolation in field effect transistors on integrated circuit chips
KR890017771A (ko) * 1988-05-20 1989-12-18 강진구 반도체장치 제조방법
US5158907A (en) * 1990-08-02 1992-10-27 At&T Bell Laboratories Method for making semiconductor devices with low dislocation defects

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2059116C3 (de) * 1970-12-01 1974-11-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines Halbleiterbauelementes
US3861968A (en) * 1972-06-19 1975-01-21 Ibm Method of fabricating integrated circuit device structure with complementary elements utilizing selective thermal oxidation and selective epitaxial deposition
EP0090642B1 (en) * 1982-03-31 1987-09-23 Kabushiki Kaisha Toshiba System for measuring interfloor traffic for group control of elevator cars

Also Published As

Publication number Publication date
GB8414923D0 (en) 1984-07-18
SE8403302D0 (sv) 1984-06-20
IT8421384A1 (it) 1985-12-13
FR2549294A1 (fr) 1985-01-18
GB2142185A (en) 1985-01-09
IT8421384A0 (it) 1984-06-13
DE3422495A1 (de) 1985-01-10
SE8403302L (sv) 1984-12-23

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