IT1182194B - Dispositivo a semiconduttore,in particolare circuito darlington, bipolare-mos integrato - Google Patents

Dispositivo a semiconduttore,in particolare circuito darlington, bipolare-mos integrato

Info

Publication number
IT1182194B
IT1182194B IT47677/85A IT4767785A IT1182194B IT 1182194 B IT1182194 B IT 1182194B IT 47677/85 A IT47677/85 A IT 47677/85A IT 4767785 A IT4767785 A IT 4767785A IT 1182194 B IT1182194 B IT 1182194B
Authority
IT
Italy
Prior art keywords
mos
semiconductor device
darlington circuit
integrated bipolar
bipolar
Prior art date
Application number
IT47677/85A
Other languages
English (en)
Other versions
IT8547677A0 (it
IT8547677A1 (it
Inventor
Perry L Merrill
Rodney R Stoltenburg
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of IT8547677A0 publication Critical patent/IT8547677A0/it
Publication of IT8547677A1 publication Critical patent/IT8547677A1/it
Application granted granted Critical
Publication of IT1182194B publication Critical patent/IT1182194B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
IT47677/85A 1984-03-16 1985-02-13 Dispositivo a semiconduttore,in particolare circuito darlington, bipolare-mos integrato IT1182194B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/590,235 US4783694A (en) 1984-03-16 1984-03-16 Integrated bipolar-MOS semiconductor device with common collector and drain

Publications (3)

Publication Number Publication Date
IT8547677A0 IT8547677A0 (it) 1985-02-13
IT8547677A1 IT8547677A1 (it) 1986-08-13
IT1182194B true IT1182194B (it) 1987-09-30

Family

ID=24361413

Family Applications (1)

Application Number Title Priority Date Filing Date
IT47677/85A IT1182194B (it) 1984-03-16 1985-02-13 Dispositivo a semiconduttore,in particolare circuito darlington, bipolare-mos integrato

Country Status (4)

Country Link
US (1) US4783694A (it)
EP (1) EP0174318A1 (it)
IT (1) IT1182194B (it)
WO (1) WO1985004285A1 (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2614154A1 (fr) * 1987-04-17 1988-10-21 Thomson Semiconducteurs Reseau d'aide a la commutation d'un transistor bipolaire de puissance
SE461428B (sv) * 1988-06-16 1990-02-12 Ericsson Telefon Ab L M Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena
US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5247200A (en) * 1989-02-16 1993-09-21 Kabushiki Kaisha Toshiba MOSFET input type BiMOS IC device
JPH0831541B2 (ja) * 1989-02-16 1996-03-27 株式会社東芝 半導体集積回路
US5260592A (en) * 1991-02-19 1993-11-09 Synaptics, Incorporated Integrating photosensor and imaging system having wide dynamic range with varactors
US5097305A (en) * 1991-02-19 1992-03-17 Synaptics Corporation Integrating photosensor and imaging system having wide dynamic range
US5324958A (en) * 1991-02-19 1994-06-28 Synaptics, Incorporated Integrating imaging systgem having wide dynamic range with sample/hold circuits
DE69320033T2 (de) * 1993-06-10 1998-12-03 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors
JP4197660B2 (ja) * 2004-04-30 2008-12-17 ローム株式会社 Ｍｏｓトランジスタおよびこれを備えた半導体集積回路装置
WO2010070547A1 (en) * 2008-12-17 2010-06-24 Philips Intellectual Property & Standards Gmbh Arrangement and method for influencing and/or detecting magnetic particles

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702947A (en) * 1970-10-21 1972-11-14 Itt Monolithic darlington transistors with common collector and seperate subcollectors
US3821780A (en) * 1972-10-24 1974-06-28 Gen Motors Corp Double mesa transistor with integral bleeder resistors
US3813588A (en) * 1973-07-09 1974-05-28 Motorola Inc Efficient power darlington device configuration
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
JPS53142184A (en) * 1977-05-18 1978-12-11 Hitachi Ltd Darlington transistor
US4198693A (en) * 1978-03-20 1980-04-15 Texas Instruments Incorporated VMOS Read only memory
NL184185C (nl) * 1978-04-07 1989-05-01 Philips Nv Darlingtonschakeling met een geintegreerde halfgeleiderdiode.
US4206469A (en) * 1978-09-15 1980-06-03 Westinghouse Electric Corp. Power metal-oxide-semiconductor-field-effect-transistor
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
US4329705A (en) * 1979-05-21 1982-05-11 Exxon Research & Engineering Co. VMOS/Bipolar power switching device
US4366522A (en) * 1979-12-10 1982-12-28 Reliance Electric Company Self-snubbing bipolar/field effect (biofet) switching circuits and method
JPS5765269A (en) * 1980-10-06 1982-04-20 Shindengen Electric Mfg Co Ltd Single transistor type converter
US4430663A (en) * 1981-03-25 1984-02-07 Bell Telephone Laboratories, Incorporated Prevention of surface channels in silicon semiconductor devices
FR2505102B1 (fr) * 1981-04-29 1986-01-24 Radiotechnique Compelec Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree
US4441117A (en) * 1981-07-27 1984-04-03 Intersil, Inc. Monolithically merged field effect transistor and bipolar junction transistor
JPS5892263A (ja) * 1981-11-28 1983-06-01 Fuji Electric Co Ltd ダ−リントントランジスタ
DE3210353A1 (de) * 1982-03-20 1983-09-22 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte darlingtonschaltung
JPS58165374A (ja) * 1982-03-26 1983-09-30 Hitachi Ltd 複合トランジスタ
US4489341A (en) * 1982-09-27 1984-12-18 Sprague Electric Company Merged-transistor switch with extra P-type region

Also Published As

Publication number Publication date
IT8547677A0 (it) 1985-02-13
IT8547677A1 (it) 1986-08-13
US4783694A (en) 1988-11-08
WO1985004285A1 (en) 1985-09-26
EP0174318A1 (en) 1986-03-19

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