IT1205089B - Metodo di formazione,in zaffiro,di contrassegni di riferimento - Google Patents

Metodo di formazione,in zaffiro,di contrassegni di riferimento

Info

Publication number
IT1205089B
IT1205089B IT21033/87A IT2103387A IT1205089B IT 1205089 B IT1205089 B IT 1205089B IT 21033/87 A IT21033/87 A IT 21033/87A IT 2103387 A IT2103387 A IT 2103387A IT 1205089 B IT1205089 B IT 1205089B
Authority
IT
Italy
Prior art keywords
formation method
reference markings
sapphire
sapphire formation
markings
Prior art date
Application number
IT21033/87A
Other languages
English (en)
Other versions
IT8721033A0 (it
Inventor
George Luther Schnable
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8721033A0 publication Critical patent/IT8721033A0/it
Application granted granted Critical
Publication of IT1205089B publication Critical patent/IT1205089B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/083—Ion implantation, general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature
IT21033/87A 1986-11-03 1987-06-24 Metodo di formazione,in zaffiro,di contrassegni di riferimento IT1205089B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/925,983 US4732867A (en) 1986-11-03 1986-11-03 Method of forming alignment marks in sapphire

Publications (2)

Publication Number Publication Date
IT8721033A0 IT8721033A0 (it) 1987-06-24
IT1205089B true IT1205089B (it) 1989-03-10

Family

ID=25452538

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21033/87A IT1205089B (it) 1986-11-03 1987-06-24 Metodo di formazione,in zaffiro,di contrassegni di riferimento

Country Status (4)

Country Link
US (1) US4732867A (it)
JP (1) JPH07107890B2 (it)
GB (1) GB2197123B (it)
IT (1) IT1205089B (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU599223B2 (en) * 1987-04-15 1990-07-12 Semiconductor Energy Laboratory Co. Ltd. Superconducting ceramic pattern and its manufacturing method
US5410125A (en) * 1990-10-11 1995-04-25 Harry Winston, S.A. Methods for producing indicia on diamonds
US5877094A (en) 1994-04-07 1999-03-02 International Business Machines Corporation Method for fabricating a silicon-on-sapphire wafer
JP3072005B2 (ja) * 1994-08-25 2000-07-31 シャープ株式会社 半導体装置及びその製造方法
US5888918A (en) * 1997-04-25 1999-03-30 Pollak; Richard Method for enhancing the color of minerals useful as gemstones
US5983238A (en) * 1997-12-26 1999-11-09 Diamond Id Gemstons identification tracking and recovery system
US6376031B1 (en) 1998-04-24 2002-04-23 Richard Pollak Method for enhancing the color of minerals useful as gemstones
US10052848B2 (en) 2012-03-06 2018-08-21 Apple Inc. Sapphire laminates
US9221289B2 (en) 2012-07-27 2015-12-29 Apple Inc. Sapphire window
US9092187B2 (en) * 2013-01-08 2015-07-28 Apple Inc. Ion implant indicia for cover glass or display component
US9232672B2 (en) 2013-01-10 2016-01-05 Apple Inc. Ceramic insert control mechanism
US9623628B2 (en) 2013-01-10 2017-04-18 Apple Inc. Sapphire component with residual compressive stress
KR101641807B1 (ko) 2013-02-12 2016-07-21 애플 인크. 다단계 이온 주입
US9416442B2 (en) 2013-03-02 2016-08-16 Apple Inc. Sapphire property modification through ion implantation
US9678540B2 (en) 2013-09-23 2017-06-13 Apple Inc. Electronic component embedded in ceramic material
US9632537B2 (en) 2013-09-23 2017-04-25 Apple Inc. Electronic component embedded in ceramic material
US9154678B2 (en) 2013-12-11 2015-10-06 Apple Inc. Cover glass arrangement for an electronic device
US11229896B2 (en) 2014-01-16 2022-01-25 W.R. Grace & Co.—Conn. Affinity chromatography media and chromatography devices
US9225056B2 (en) 2014-02-12 2015-12-29 Apple Inc. Antenna on sapphire structure
US10406634B2 (en) 2015-07-01 2019-09-10 Apple Inc. Enhancing strength in laser cutting of ceramic components
US10280504B2 (en) 2015-09-25 2019-05-07 Apple Inc. Ion-implanted, anti-reflective layer formed within sapphire material
JP7420756B2 (ja) * 2021-02-12 2024-01-23 株式会社デンソー 半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2344320C2 (de) * 1973-09-03 1975-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Kompensation von Grenzflächenladungen bei epitaktisch auf ein Substrat aufgewachsenen Siliziumdünnschichten
JPS51123562A (en) * 1975-04-21 1976-10-28 Sony Corp Production method of semiconductor device
JPS5827663B2 (ja) * 1979-06-04 1983-06-10 富士通株式会社 半導体装置の製造方法
DE3138960A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung elektrisch leitender schichten
US4395467A (en) * 1981-12-30 1983-07-26 Rca Corporation Transparent conductive film having areas of high and low resistivity
JPS5935425A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
DE3324551A1 (de) * 1983-07-07 1985-01-17 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur kennzeichnung von halbleiteroberflaechen durch laserstrahlung
US4534804A (en) * 1984-06-14 1985-08-13 International Business Machines Corporation Laser process for forming identically positioned alignment marks on the opposite sides of a semiconductor wafer
US4592129A (en) * 1985-04-01 1986-06-03 Motorola, Inc. Method of making an integral, multiple layer antireflection coating by hydrogen ion implantation
US4634473A (en) * 1985-09-09 1987-01-06 Rca Corporation Method for fabricating a radiation hardened oxide having structural damage

Also Published As

Publication number Publication date
GB8714909D0 (en) 1987-07-29
US4732867A (en) 1988-03-22
GB2197123A (en) 1988-05-11
IT8721033A0 (it) 1987-06-24
JPH07107890B2 (ja) 1995-11-15
JPS63122209A (ja) 1988-05-26
GB2197123B (en) 1990-05-09

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