IT1213260B - Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione. - Google Patents
Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione.Info
- Publication number
- IT1213260B IT1213260B IT8424126A IT2412684A IT1213260B IT 1213260 B IT1213260 B IT 1213260B IT 8424126 A IT8424126 A IT 8424126A IT 2412684 A IT2412684 A IT 2412684A IT 1213260 B IT1213260 B IT 1213260B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacture
- bridge circuit
- mos transistors
- channel power
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8424126A IT1213260B (it) | 1984-12-18 | 1984-12-18 | Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione. |
| US06/773,316 US4949142A (en) | 1984-12-18 | 1985-09-06 | Integrated N-channel power MOS bridge circuit |
| GB08530656A GB2168534B (en) | 1984-12-18 | 1985-12-12 | Integrated power mos bridge circuit and method |
| DE3544324A DE3544324C2 (de) | 1984-12-18 | 1985-12-14 | Integrierte MOS-Leistungsbrückenschaltung sowie Verfahren zu deren Herstellung |
| FR858518709A FR2574992B1 (fr) | 1984-12-18 | 1985-12-17 | Circuit integre mos de puissance formant un pont et procede de fabrication de ce circuit |
| JP60286853A JPS61148881A (ja) | 1984-12-18 | 1985-12-17 | 集積電力ｍｏｓブリツジ回路 |
| NL8503485A NL193784C (nl) | 1984-12-18 | 1985-12-18 | Geïntegreerde brugschakeling, en werkwijze voor het vervaardigen daarvan. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8424126A IT1213260B (it) | 1984-12-18 | 1984-12-18 | Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8424126A0 IT8424126A0 (it) | 1984-12-18 |
| IT1213260B true IT1213260B (it) | 1989-12-14 |
Family
ID=11212104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT8424126A IT1213260B (it) | 1984-12-18 | 1984-12-18 | Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4949142A (it) |
| JP (1) | JPS61148881A (it) |
| DE (1) | DE3544324C2 (it) |
| FR (1) | FR2574992B1 (it) |
| GB (1) | GB2168534B (it) |
| IT (1) | IT1213260B (it) |
| NL (1) | NL193784C (it) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07114279B2 (ja) * | 1988-01-06 | 1995-12-06 | 株式会社東芝 | 半導体装置 |
| GB2224160A (en) * | 1988-10-24 | 1990-04-25 | Marconi Instruments Ltd | Integrated semiconductor circuits |
| US5198688A (en) * | 1989-03-06 | 1993-03-30 | Fuji Electric Co., Ltd. | Semiconductor device provided with a conductivity modulation MISFET |
| JPH02270367A (ja) * | 1989-04-12 | 1990-11-05 | Hitachi Ltd | 半導体集積回路装置 |
| JP3057757B2 (ja) * | 1990-11-29 | 2000-07-04 | 日産自動車株式会社 | トランジスタ |
| EP0544047B1 (en) * | 1991-11-25 | 1998-02-18 | STMicroelectronics S.r.l. | High current MOS transistor integrated bridge structure optimising conduction power losses |
| US5640034A (en) * | 1992-05-18 | 1997-06-17 | Texas Instruments Incorporated | Top-drain trench based resurf DMOS transistor structure |
| KR0127282B1 (ko) * | 1992-05-18 | 1998-04-02 | 도요다 요시또시 | 반도체 장치 |
| DE69207410T2 (de) * | 1992-09-18 | 1996-08-29 | Cons Ric Microelettronica | Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren |
| DE69326771T2 (de) | 1993-12-07 | 2000-03-02 | Stmicroelectronics S.R.L., Agrate Brianza | Ausgangstufe mit Transistoren von unterschiedlichem Typ |
| JP2715941B2 (ja) * | 1994-10-31 | 1998-02-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5665988A (en) * | 1995-02-09 | 1997-09-09 | Fuji Electric Co., Ltd. | Conductivity-modulation semiconductor |
| DE69624493T2 (de) | 1996-12-09 | 2003-06-26 | Stmicroelectronics S.R.L., Agrate Brianza | Vorrichtung und Verfahren zur Unterdrückung von parasitären Effekten in einer integrierten Schaltung mit pn-Isolationszonen |
| US6246557B1 (en) * | 1998-04-10 | 2001-06-12 | Texas Instruments Incorporated | Loss of ground protection for electronic relays |
| DE19946167C2 (de) * | 1999-09-27 | 2002-04-25 | Infineon Technologies Ag | Integrierte Halbbrückenschaltung |
| KR20050085461A (ko) * | 2002-12-10 | 2005-08-29 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 다운 컨버터 및 전기 부하 스위칭 방법 |
| JP4326835B2 (ja) * | 2003-05-20 | 2009-09-09 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法 |
| DE102007031490B4 (de) | 2007-07-06 | 2017-11-16 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleitermoduls |
| US7902608B2 (en) * | 2009-05-28 | 2011-03-08 | International Business Machines Corporation | Integrated circuit device with deep trench isolation regions for all inter-well and intra-well isolation and with a shared contact to a junction between adjacent device diffusion regions and an underlying floating well section |
| US8598655B1 (en) | 2012-08-03 | 2013-12-03 | Infineon Technologies Dresden Gmbh | Semiconductor device and method for manufacturing a semiconductor device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA980012A (en) * | 1971-06-08 | 1975-12-16 | Ncr Corporation | Protective circuits |
| FR2143553B1 (it) * | 1971-06-29 | 1974-05-31 | Sescosem | |
| US4546370A (en) * | 1979-02-15 | 1985-10-08 | Texas Instruments Incorporated | Monolithic integration of logic, control and high voltage interface circuitry |
| US4288801A (en) * | 1979-05-30 | 1981-09-08 | Xerox Corporation | Monolithic HVMOSFET active switch array |
| DE3044444A1 (de) * | 1980-11-26 | 1982-06-16 | Deutsche Itt Industries Gmbh, 7800 Freiburg | "monolithisch integrierte gleichrichter-brueckenschaltung" |
| JPS57162359A (en) * | 1981-03-30 | 1982-10-06 | Toshiba Corp | Semiconductor device |
| DE3400973A1 (de) * | 1984-01-13 | 1985-07-18 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Monolithisch integrierte gleichrichterbrueckenschaltung |
-
1984
- 1984-12-18 IT IT8424126A patent/IT1213260B/it active
-
1985
- 1985-09-06 US US06/773,316 patent/US4949142A/en not_active Expired - Lifetime
- 1985-12-12 GB GB08530656A patent/GB2168534B/en not_active Expired
- 1985-12-14 DE DE3544324A patent/DE3544324C2/de not_active Expired - Fee Related
- 1985-12-17 JP JP60286853A patent/JPS61148881A/ja active Pending
- 1985-12-17 FR FR858518709A patent/FR2574992B1/fr not_active Expired
- 1985-12-18 NL NL8503485A patent/NL193784C/nl not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL193784B (nl) | 2000-06-05 |
| FR2574992B1 (fr) | 1989-12-08 |
| FR2574992A1 (fr) | 1986-06-20 |
| DE3544324C2 (de) | 1997-09-25 |
| JPS61148881A (ja) | 1986-07-07 |
| DE3544324A1 (de) | 1986-06-19 |
| GB8530656D0 (en) | 1986-01-22 |
| IT8424126A0 (it) | 1984-12-18 |
| NL8503485A (nl) | 1986-07-16 |
| US4949142A (en) | 1990-08-14 |
| NL193784C (nl) | 2000-10-06 |
| GB2168534A (en) | 1986-06-18 |
| GB2168534B (en) | 1988-09-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19961227 |