IT1224606B - Sensore chimico monolitico a membrana ione selettiva di tipo chemfet eprocedimento per la sua realizzazione - Google Patents

Sensore chimico monolitico a membrana ione selettiva di tipo chemfet eprocedimento per la sua realizzazione

Info

Publication number
IT1224606B
IT1224606B IT8867905A IT6790588A IT1224606B IT 1224606 B IT1224606 B IT 1224606B IT 8867905 A IT8867905 A IT 8867905A IT 6790588 A IT6790588 A IT 6790588A IT 1224606 B IT1224606 B IT 1224606B
Authority
IT
Italy
Prior art keywords
realization
procedure
chemical sensor
selective ion
ion membrane
Prior art date
Application number
IT8867905A
Other languages
English (en)
Other versions
IT8867905A0 (it
Inventor
Franco Forlani
Original Assignee
Eniricerche Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eniricerche Spa filed Critical Eniricerche Spa
Priority to IT8867905A priority Critical patent/IT1224606B/it
Publication of IT8867905A0 publication Critical patent/IT8867905A0/it
Priority to EP89118424A priority patent/EP0363805A1/en
Priority to US07/417,237 priority patent/US5077229A/en
Application granted granted Critical
Publication of IT1224606B publication Critical patent/IT1224606B/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Pressure Sensors (AREA)
IT8867905A 1988-10-10 1988-10-10 Sensore chimico monolitico a membrana ione selettiva di tipo chemfet eprocedimento per la sua realizzazione IT1224606B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT8867905A IT1224606B (it) 1988-10-10 1988-10-10 Sensore chimico monolitico a membrana ione selettiva di tipo chemfet eprocedimento per la sua realizzazione
EP89118424A EP0363805A1 (en) 1988-10-10 1989-10-04 A monolithic chemical sensor of the chemfet type incorporating an ionselective membrane and method of making the same
US07/417,237 US5077229A (en) 1988-10-10 1989-10-05 Monolithic chemical sensor of the chemfet type incorporating an ion-selective membrane and method of making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8867905A IT1224606B (it) 1988-10-10 1988-10-10 Sensore chimico monolitico a membrana ione selettiva di tipo chemfet eprocedimento per la sua realizzazione

Publications (2)

Publication Number Publication Date
IT8867905A0 IT8867905A0 (it) 1988-10-10
IT1224606B true IT1224606B (it) 1990-10-04

Family

ID=11306250

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8867905A IT1224606B (it) 1988-10-10 1988-10-10 Sensore chimico monolitico a membrana ione selettiva di tipo chemfet eprocedimento per la sua realizzazione

Country Status (3)

Country Link
US (1) US5077229A (it)
EP (1) EP0363805A1 (it)
IT (1) IT1224606B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2666930B1 (fr) * 1990-09-14 1992-12-18 Lyon Ecole Centrale Procede et realisation d'une surface-grille d'un capteur electrochimique integre, constitue d'un transistor a effet de champ et sensible aux especes alcalino-terreuses et capteur obtenu.
DE19814857C2 (de) * 1998-04-02 2000-09-28 Siemens Ag Gassensor nach dem Prinzip der Austrittsarbeitsmessung
CN1315195C (zh) * 2000-02-10 2007-05-09 国际整流器有限公司 在单面上带块形连接的垂直导电倒装芯片式器件
US7053425B2 (en) * 2003-11-12 2006-05-30 General Electric Company Gas sensor device
US7768075B2 (en) 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
DE102008041960A1 (de) * 2008-09-10 2010-03-11 Robert Bosch Gmbh Messsensor, Verfahren zum Analysieren einer unpolaren Flüssigkeit, Verfahren zum Herstellen eines Messsensors
MY162299A (en) * 2009-10-20 2017-05-31 Mimos Berhad Inverted isfet and method of producing thereof
MY164424A (en) * 2011-03-03 2017-12-15 Mimos Berhad A sensor system and a method for fabricating thereof
CN103649740B (zh) * 2011-06-06 2015-09-30 耶达研究及发展有限公司 基于分子控制的半导体电阻器的蛋白质检测器

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4020830A (en) * 1975-03-12 1977-05-03 The University Of Utah Selective chemical sensitive FET transducers
JPS53125776A (en) * 1977-04-08 1978-11-02 Nec Corp Manufacture for semiconductor device
DE2736200A1 (de) * 1977-08-11 1979-02-22 Bbc Brown Boveri & Cie Chemisch sensitiver feldeffekt- transistor und verfahren zur herstellung desselben
US4644380A (en) * 1977-12-08 1987-02-17 University Of Pennsylvania Substance-sensitive electrical structures
JPS5825221B2 (ja) * 1977-12-12 1983-05-26 株式会社クラレ Ｆｅｔ比較電極
JPS5582451A (en) * 1978-12-14 1980-06-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5626250A (en) * 1979-08-10 1981-03-13 Olympus Optical Co Ltd Composite chemical sensor
JPS5727067A (en) * 1980-07-25 1982-02-13 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field-effect transistor
GB2096825A (en) * 1981-04-09 1982-10-20 Sibbald Alastair Chemical sensitive semiconductor field effect transducer
FR2510260A1 (fr) * 1981-07-24 1983-01-28 Suisse Fond Rech Microtech Dispositif semiconducteur sensible aux ions
US4411741A (en) * 1982-01-12 1983-10-25 University Of Utah Apparatus and method for measuring the concentration of components in fluids
JPS59102154A (ja) * 1982-12-06 1984-06-13 Olympus Optical Co Ltd 化学的感応素子
DE3430941C2 (de) * 1983-08-29 1987-04-09 Hitachi, Ltd., Tokio/Tokyo Chemisch empfindlicher Feldeffekttransistor-Sensor
DE3477977D1 (en) * 1983-12-08 1989-06-01 Gen Signal Corp Isfet sensor and method of manufacture
JPS60242354A (ja) * 1984-05-16 1985-12-02 Sharp Corp Ｆｅｔ型センサ
JPS6157847A (ja) * 1984-08-29 1986-03-24 Sharp Corp 電界効果型湿度センサ
JPS61181955A (ja) * 1985-02-08 1986-08-14 Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai 電界効果型トランジスタイオンセンサ
DE3513168A1 (de) * 1985-04-12 1986-10-16 Thomas 8000 München Dandekar Biosensor bestehend aus einem halbleiter auf silizium oder kohlenstoffbasis (elektronischer teil) und nukleinbasen (od. anderen biol. monomeren)
US4881109A (en) * 1985-08-29 1989-11-14 Matsushita Electric Industrial Co., Ltd. Sensor using a field effect transistor and method of fabricating the same
GB8522207D0 (en) * 1985-09-06 1985-10-09 Kodak Ltd Ion-sensitive electrochemical sensor
US4637861A (en) * 1985-12-16 1987-01-20 Allied Corporation Stabilized, lipid membrane-based device and method of analysis
US4883767A (en) * 1986-12-05 1989-11-28 General Electric Company Method of fabricating self aligned semiconductor devices
EP0339613A3 (en) * 1988-04-28 1990-11-07 Hitachi, Ltd. Ion selective electrode
US4874499A (en) * 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors
JPH0232250A (ja) * 1988-07-22 1990-02-02 Tokyo Electric Power Co Inc:The 管体検査装置
JP2646698B2 (ja) * 1988-09-13 1997-08-27 三菱化学株式会社 画像形成材料及び画像形成方法

Also Published As

Publication number Publication date
EP0363805A1 (en) 1990-04-18
US5077229A (en) 1991-12-31
IT8867905A0 (it) 1988-10-10

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971014