IT1226701B - Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet. - Google Patents
Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet.Info
- Publication number
- IT1226701B IT1226701B IT8821550A IT2155088A IT1226701B IT 1226701 B IT1226701 B IT 1226701B IT 8821550 A IT8821550 A IT 8821550A IT 2155088 A IT2155088 A IT 2155088A IT 1226701 B IT1226701 B IT 1226701B
- Authority
- IT
- Italy
- Prior art keywords
- silicon
- organosilans
- eos
- deposition
- procedure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Silicon Polymers (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8821550A IT1226701B (it) | 1988-07-29 | 1988-07-29 | Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet. |
| EP89201965A EP0353818A1 (en) | 1988-07-29 | 1989-07-26 | Process for depositing organosilanes on substrates of silicon or silicon oxide for devices of EOS or CHEMFET type |
| JP1194431A JPH0278225A (ja) | 1988-07-29 | 1989-07-28 | オルガノシランの析出法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8821550A IT1226701B (it) | 1988-07-29 | 1988-07-29 | Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8821550A0 IT8821550A0 (it) | 1988-07-29 |
| IT1226701B true IT1226701B (it) | 1991-02-05 |
Family
ID=11183468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT8821550A IT1226701B (it) | 1988-07-29 | 1988-07-29 | Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet. |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0353818A1 (it) |
| JP (1) | JPH0278225A (it) |
| IT (1) | IT1226701B (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0793296B1 (it) * | 1991-01-08 | 1995-10-09 | Fujitsu Kk | |
| DE69130947T2 (de) * | 1991-01-08 | 1999-07-08 | Fujitsu Ltd., Kawasaki, Kanagawa | Verfahren zur bildung eines siliciumoxid-filmes |
| JP3262334B2 (ja) | 1992-07-04 | 2002-03-04 | トリコン ホルディングズ リミテッド | 半導体ウエハーを処理する方法 |
| JPH06161707A (ja) * | 1992-11-20 | 1994-06-10 | Pfu Ltd | 文字コード切換処理方式 |
| US5858880A (en) * | 1994-05-14 | 1999-01-12 | Trikon Equipment Limited | Method of treating a semi-conductor wafer |
| WO1998008249A1 (en) | 1996-08-24 | 1998-02-26 | Trikon Equipments Limited | Method and apparatus for depositing a planarized dielectric layer on a semiconductor substrate |
| US6974766B1 (en) * | 1998-10-01 | 2005-12-13 | Applied Materials, Inc. | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5825221B2 (ja) * | 1977-12-12 | 1983-05-26 | 株式会社クラレ | Fet比較電極 |
| CA1204527A (en) * | 1982-08-13 | 1986-05-13 | Theodore F. Retajczyk, Jr. | Polymeric films for electronic circuits |
| DE3526348A1 (de) * | 1985-07-23 | 1987-02-05 | Fraunhofer Ges Forschung | Sensoren fuer die selektive bestimmung von komponenten in fluessiger oder gasfoermiger phase |
-
1988
- 1988-07-29 IT IT8821550A patent/IT1226701B/it active
-
1989
- 1989-07-26 EP EP89201965A patent/EP0353818A1/en not_active Withdrawn
- 1989-07-28 JP JP1194431A patent/JPH0278225A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0353818A1 (en) | 1990-02-07 |
| IT8821550A0 (it) | 1988-07-29 |
| JPH0278225A (ja) | 1990-03-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19960717 |