IT1226701B - Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet. - Google Patents

Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet.

Info

Publication number
IT1226701B
IT1226701B IT8821550A IT2155088A IT1226701B IT 1226701 B IT1226701 B IT 1226701B IT 8821550 A IT8821550 A IT 8821550A IT 2155088 A IT2155088 A IT 2155088A IT 1226701 B IT1226701 B IT 1226701B
Authority
IT
Italy
Prior art keywords
silicon
organosilans
eos
deposition
procedure
Prior art date
Application number
IT8821550A
Other languages
English (en)
Other versions
IT8821550A0 (it
Inventor
Vincenzo Barbarossa
Original Assignee
Eniricerche Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eniricerche Spa filed Critical Eniricerche Spa
Priority to IT8821550A priority Critical patent/IT1226701B/it
Publication of IT8821550A0 publication Critical patent/IT8821550A0/it
Priority to EP89201965A priority patent/EP0353818A1/en
Priority to JP1194431A priority patent/JPH0278225A/ja
Application granted granted Critical
Publication of IT1226701B publication Critical patent/IT1226701B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Silicon Polymers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
IT8821550A 1988-07-29 1988-07-29 Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet. IT1226701B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT8821550A IT1226701B (it) 1988-07-29 1988-07-29 Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet.
EP89201965A EP0353818A1 (en) 1988-07-29 1989-07-26 Process for depositing organosilanes on substrates of silicon or silicon oxide for devices of EOS or CHEMFET type
JP1194431A JPH0278225A (ja) 1988-07-29 1989-07-28 オルガノシランの析出法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8821550A IT1226701B (it) 1988-07-29 1988-07-29 Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet.

Publications (2)

Publication Number Publication Date
IT8821550A0 IT8821550A0 (it) 1988-07-29
IT1226701B true IT1226701B (it) 1991-02-05

Family

ID=11183468

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8821550A IT1226701B (it) 1988-07-29 1988-07-29 Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet.

Country Status (3)

Country Link
EP (1) EP0353818A1 (it)
JP (1) JPH0278225A (it)
IT (1) IT1226701B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992012535A1 (fr) * 1991-01-08 1992-07-23 Fujitsu Limited Procede de formation d'une couche en oxyde de silicium
JPH0793296B2 (ja) * 1991-01-08 1995-10-09 富士通株式会社 シリコン酸化膜の形成方法
US5874367A (en) 1992-07-04 1999-02-23 Trikon Technologies Limited Method of treating a semi-conductor wafer
JPH06161707A (ja) * 1992-11-20 1994-06-10 Pfu Ltd 文字コード切換処理方式
US5858880A (en) * 1994-05-14 1999-01-12 Trikon Equipment Limited Method of treating a semi-conductor wafer
DE19781956B4 (de) 1996-08-24 2006-06-14 Trikon Equipments Ltd., Newport Verfahren zum Aufbringen einer planarisierten dielektrischen Schicht auf einem Halbleitersubstrat
US6974766B1 (en) * 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
CN118240474A (zh) * 2022-12-22 2024-06-25 江苏菲沃泰纳米科技股份有限公司 一种复合涂层、制备方法及器件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825221B2 (ja) * 1977-12-12 1983-05-26 株式会社クラレ Fet比較電極
CA1204527A (en) * 1982-08-13 1986-05-13 Theodore F. Retajczyk, Jr. Polymeric films for electronic circuits
DE3526348A1 (de) * 1985-07-23 1987-02-05 Fraunhofer Ges Forschung Sensoren fuer die selektive bestimmung von komponenten in fluessiger oder gasfoermiger phase

Also Published As

Publication number Publication date
EP0353818A1 (en) 1990-02-07
JPH0278225A (ja) 1990-03-19
IT8821550A0 (it) 1988-07-29

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960717