IT1245794B - Dispositivo semiconduttore molto affidabile - Google Patents

Dispositivo semiconduttore molto affidabile

Info

Publication number
IT1245794B
IT1245794B ITMI910091A ITMI910091A IT1245794B IT 1245794 B IT1245794 B IT 1245794B IT MI910091 A ITMI910091 A IT MI910091A IT MI910091 A ITMI910091 A IT MI910091A IT 1245794 B IT1245794 B IT 1245794B
Authority
IT
Italy
Prior art keywords
semiconductor device
junction
region
doping
reliable semiconductor
Prior art date
Application number
ITMI910091A
Other languages
English (en)
Inventor
Sin Yun-Seung
Kang Jun
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI910091A0 publication Critical patent/ITMI910091A0/it
Publication of ITMI910091A1 publication Critical patent/ITMI910091A1/it
Application granted granted Critical
Publication of IT1245794B publication Critical patent/IT1245794B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Un dispositivo semiconduttore molto affidabile comprende un substrato semiconduttore presentante un drogaggio di primo tipo, una regione con giunzione poco profonda presentante un drogaggio di secondo tipo, uno strato di cablaggio a bassa resistenza realizzato sul substrato semiconduttore ed una regione con giunzione profonda presentante un drogaggio di secondo tipo. La regione con giunzione profonda è realizzata sotto i contatti di "source" e di "drain" per proteggere adeguatamente il canale di un transistore contro una perforazione localizzata di giunzione (junction spiking), cosicché la caratteristica ESD (capacità di sopportare danni di origine elettrostatica) viene migliorata con una semplice modifica della struttura (layout) del dispositivo a semiconduttore.(fig. 3).
ITMI910091A 1990-09-05 1991-01-16 Dispositivo semiconduttore molto affidabile IT1245794B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900014002A KR920007171A (ko) 1990-09-05 1990-09-05 고신뢰성 반도체장치

Publications (3)

Publication Number Publication Date
ITMI910091A0 ITMI910091A0 (it) 1991-01-16
ITMI910091A1 ITMI910091A1 (it) 1992-07-16
IT1245794B true IT1245794B (it) 1994-10-18

Family

ID=19303260

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI910091A IT1245794B (it) 1990-09-05 1991-01-16 Dispositivo semiconduttore molto affidabile

Country Status (6)

Country Link
JP (1) JPH04234162A (it)
KR (1) KR920007171A (it)
DE (1) DE4101274A1 (it)
FR (1) FR2666454A1 (it)
GB (1) GB2247779A (it)
IT (1) IT1245794B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3456242B2 (ja) * 1993-01-07 2003-10-14 セイコーエプソン株式会社 半導体装置及びその製造方法
DE69429018T2 (de) * 1993-01-12 2002-06-13 Sony Corp., Tokio/Tokyo Ausgangsschaltung für Ladungsübertragungselement
KR0166101B1 (ko) * 1993-10-21 1999-01-15 김주용 정전방전 보호회로의 트랜지스터 및 그 제조방법
FR2713398B1 (fr) * 1993-11-30 1996-01-19 Sgs Thomson Microelectronics Fusible pour circuit intégré.
US5932917A (en) * 1996-04-19 1999-08-03 Nippon Steel Corporation Input protective circuit having a diffusion resistance layer
JPH1070266A (ja) * 1996-08-26 1998-03-10 Nec Corp 半導体装置およびその製造方法
DE19840239A1 (de) * 1998-09-03 2000-03-09 Siemens Ag Leistungshalbleiter-Bauelement mit einer Anordnung zum Schutz vor Schäden durch elektrostatische Entladungen
DE102004012819B4 (de) 2004-03-16 2006-02-23 Infineon Technologies Ag Leistungshalbleiterbauelement mit erhöhter Robustheit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1073560A (en) * 1964-12-28 1967-06-28 Gen Electric Improvements in semiconductor devices
DE1803392A1 (de) * 1968-10-16 1970-06-18 Siemens Ag Schutzvorrichtung fuer einen Feldeffekttransistor
JPS57211272A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor device
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
DE3586268T2 (de) * 1984-05-03 1993-02-25 Digital Equipment Corp Eingangs-schutzanordnung fuer vlsi-schaltungsanordnungen.
US4734752A (en) * 1985-09-27 1988-03-29 Advanced Micro Devices, Inc. Electrostatic discharge protection device for CMOS integrated circuit outputs

Also Published As

Publication number Publication date
KR920007171A (ko) 1992-04-28
JPH04234162A (ja) 1992-08-21
GB2247779A (en) 1992-03-11
FR2666454A1 (fr) 1992-03-06
GB9100619D0 (en) 1991-02-27
ITMI910091A1 (it) 1992-07-16
DE4101274A1 (de) 1992-03-19
ITMI910091A0 (it) 1991-01-16

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971028