IT1270263B - Sensore piroelettrico ad infrarossi a pellicola sottile e metodo per la sua fabbricazione - Google Patents

Sensore piroelettrico ad infrarossi a pellicola sottile e metodo per la sua fabbricazione

Info

Publication number
IT1270263B
IT1270263B ITMI941294A ITMI941294A IT1270263B IT 1270263 B IT1270263 B IT 1270263B IT MI941294 A ITMI941294 A IT MI941294A IT MI941294 A ITMI941294 A IT MI941294A IT 1270263 B IT1270263 B IT 1270263B
Authority
IT
Italy
Prior art keywords
thin film
electrode
infrared sensor
manufacture
pyroelectric infrared
Prior art date
Application number
ITMI941294A
Other languages
English (en)
Inventor
Don-Hee Lee
Sung Moon Cho
Original Assignee
Gold Star Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Co filed Critical Gold Star Co
Publication of ITMI941294A0 publication Critical patent/ITMI941294A0/it
Publication of ITMI941294A1 publication Critical patent/ITMI941294A1/it
Application granted granted Critical
Publication of IT1270263B publication Critical patent/IT1270263B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

Sensore piroelettrico ad infrarossi a pellicola sottile comprendente un elettrodo inferiore in Pt disposto sulla superficie superiore di un substrato, una pellicola sottile piroelettrica disposta sulla superficie superiore dell'elettrodo inferiore in Pt in modo che la sua parte di destra si sovrapponga con una predeterminata zona dell'elettrodo inferiore in Pt, e un elettrodo superiore in Cr disposta sulla pellicola sottile piroelettrica. L'elettrodo inferiore in Pt ha uno spessore da 150 a 400 A mentre il substrato comprende un substrato a cristalli singoli di MgO avente un piano di orientamento (100), in modo da orientare l'orientamento dell'asse C della pellicola sottile piroelettrica. Con questa struttura, la pellicola sottile piroelettrica presenta migliorata sensibilità ai raggi infrarossi.
ITMI941294A 1993-06-22 1994-06-21 Sensore piroelettrico ad infrarossi a pellicola sottile e metodo per la sua fabbricazione IT1270263B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930011409A KR950001303A (ko) 1993-06-22 1993-06-22 박막 적외선 센서구조 및 그 제조 방법

Publications (3)

Publication Number Publication Date
ITMI941294A0 ITMI941294A0 (it) 1994-06-21
ITMI941294A1 ITMI941294A1 (it) 1995-12-21
IT1270263B true IT1270263B (it) 1997-04-29

Family

ID=19357813

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI941294A IT1270263B (it) 1993-06-22 1994-06-21 Sensore piroelettrico ad infrarossi a pellicola sottile e metodo per la sua fabbricazione

Country Status (5)

Country Link
US (1) US5448068A (it)
JP (1) JPH07146177A (it)
KR (1) KR950001303A (it)
CN (1) CN1108759A (it)
IT (1) IT1270263B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612536A (en) * 1994-02-07 1997-03-18 Matsushita Electric Industrial Co., Ltd. Thin film sensor element and method of manufacturing the same
JP2787198B2 (ja) * 1995-09-01 1998-08-13 川崎重工業株式会社 薄膜焦電型赤外線検出素子及びその作製方法
KR980006089A (ko) * 1996-06-29 1998-03-30 김주용 반도체 소자의 소자분리막 제조방법
US5990481A (en) * 1996-08-30 1999-11-23 Raytheon Company Thermal detector with preferentially-ordered thermally sensitive element and method
US6020216A (en) * 1996-08-30 2000-02-01 Texas Instruments Incorporated Thermal detector with stress-aligned thermally sensitive element and method
US6137107A (en) * 1996-08-30 2000-10-24 Raytheon Company Thermal detector with inter-digitated thin film electrodes and method
US6087661A (en) * 1997-10-29 2000-07-11 Raytheon Company Thermal isolation of monolithic thermal detector
DE10210772C1 (de) * 2002-03-12 2003-06-26 Heraeus Sensor Nite Gmbh Temperatursensor
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
US7265429B2 (en) * 2002-08-07 2007-09-04 Chang-Feng Wan System and method of fabricating micro cavities
US7265477B2 (en) * 2004-01-05 2007-09-04 Chang-Feng Wan Stepping actuator and method of manufacture therefore
KR101238360B1 (ko) * 2006-08-16 2013-03-04 삼성전자주식회사 공진기 및 그 제조 방법
DE102007046900C5 (de) * 2007-09-28 2018-07-26 Heraeus Sensor Technology Gmbh Hochtemperatursensor und ein Verfahren zu dessen Herstellung
EP2934163B1 (en) 2012-12-19 2019-10-16 Unilever N.V. Tea-based beverage
CA2892815A1 (en) 2012-12-19 2014-06-26 Unilever Plc Ready-to-drink tea-based beverage comprising cellulose microfibrils derived from plant parenchymal tissue
DE102013209541A1 (de) * 2013-05-23 2014-11-27 Siemens Aktiengesellschaft Sensorelementanordnung und Verfahren zum Herstellen einer Sensorelementanordnung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6138427A (ja) * 1984-07-30 1986-02-24 Matsushita Electric Ind Co Ltd 赤外線検出素子
JPH0672800B2 (ja) * 1986-03-12 1994-09-14 松下電器産業株式会社 焦電型赤外線センサ
JPH0749998B2 (ja) * 1986-11-14 1995-05-31 松下電器産業株式会社 焦電型赤外線アレイ素子
JPH0749997B2 (ja) * 1986-11-14 1995-05-31 松下電器産業株式会社 焦電型赤外線アレイ素子

Also Published As

Publication number Publication date
ITMI941294A0 (it) 1994-06-21
ITMI941294A1 (it) 1995-12-21
KR950001303A (ko) 1995-01-03
US5448068A (en) 1995-09-05
CN1108759A (zh) 1995-09-20
JPH07146177A (ja) 1995-06-06

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970627