IT1271636B - Metodo per la preparazione e la passivazione degli specchi terminali di laser a semiconduttore ad alta potenza di emissione e relativo dispositivo - Google Patents

Metodo per la preparazione e la passivazione degli specchi terminali di laser a semiconduttore ad alta potenza di emissione e relativo dispositivo

Info

Publication number
IT1271636B
IT1271636B ITMI940859A ITMI940859A IT1271636B IT 1271636 B IT1271636 B IT 1271636B IT MI940859 A ITMI940859 A IT MI940859A IT MI940859 A ITMI940859 A IT MI940859A IT 1271636 B IT1271636 B IT 1271636B
Authority
IT
Italy
Prior art keywords
passivation
preparation
semiconductor laser
related device
emission semiconductor
Prior art date
Application number
ITMI940859A
Other languages
English (en)
Inventor
Giudice Massimo Del
Sergio Pellegrino
Fabio Vidimari
Michele Giovanni Re
Original Assignee
Alcatel Italia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Italia filed Critical Alcatel Italia
Priority to ITMI940859A priority Critical patent/IT1271636B/it
Publication of ITMI940859A0 publication Critical patent/ITMI940859A0/it
Priority to JP7108697A priority patent/JPH0856057A/ja
Priority to EP95401022A priority patent/EP0684671A1/en
Priority to CA002148655A priority patent/CA2148655A1/en
Publication of ITMI940859A1 publication Critical patent/ITMI940859A1/it
Application granted granted Critical
Publication of IT1271636B publication Critical patent/IT1271636B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Formation Of Insulating Films (AREA)
ITMI940859A 1994-05-04 1994-05-04 Metodo per la preparazione e la passivazione degli specchi terminali di laser a semiconduttore ad alta potenza di emissione e relativo dispositivo IT1271636B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ITMI940859A IT1271636B (it) 1994-05-04 1994-05-04 Metodo per la preparazione e la passivazione degli specchi terminali di laser a semiconduttore ad alta potenza di emissione e relativo dispositivo
JP7108697A JPH0856057A (ja) 1994-05-04 1995-05-02 高出力半導体レーザのエンド・ミラーを準備しパッシベーションする方法および関連するレーザ・デバイス
EP95401022A EP0684671A1 (en) 1994-05-04 1995-05-03 Method for the preparation and passivation of the end mirrors of a high emissive power semiconductor laser and related laser device
CA002148655A CA2148655A1 (en) 1994-05-04 1995-05-04 Method for the preparation and passivation of the end mirrors of a high emissive power semiconductor laser and related laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI940859A IT1271636B (it) 1994-05-04 1994-05-04 Metodo per la preparazione e la passivazione degli specchi terminali di laser a semiconduttore ad alta potenza di emissione e relativo dispositivo

Publications (3)

Publication Number Publication Date
ITMI940859A0 ITMI940859A0 (it) 1994-05-04
ITMI940859A1 ITMI940859A1 (it) 1995-11-04
IT1271636B true IT1271636B (it) 1997-06-04

Family

ID=11368815

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI940859A IT1271636B (it) 1994-05-04 1994-05-04 Metodo per la preparazione e la passivazione degli specchi terminali di laser a semiconduttore ad alta potenza di emissione e relativo dispositivo

Country Status (4)

Country Link
EP (1) EP0684671A1 (it)
JP (1) JPH0856057A (it)
CA (1) CA2148655A1 (it)
IT (1) IT1271636B (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3774503B2 (ja) * 1996-04-17 2006-05-17 日本オプネクスト株式会社 半導体レーザ素子およびその製造方法
US5668049A (en) * 1996-07-31 1997-09-16 Lucent Technologies Inc. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
EP0898345A3 (en) * 1997-08-13 2004-01-02 Mitsubishi Chemical Corporation Compound semiconductor light emitting device and method of fabricating the same
US6355571B1 (en) 1998-11-17 2002-03-12 Applied Materials, Inc. Method and apparatus for reducing copper oxidation and contamination in a semiconductor device
US20010049181A1 (en) 1998-11-17 2001-12-06 Sudha Rathi Plasma treatment for cooper oxide reduction
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
GB0127690D0 (en) * 2001-11-19 2002-01-09 Denselight Semiconductors Pte Coating of optical device facets at the wafer-level
CN101457338B (zh) 2003-02-14 2011-04-27 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
US7229911B2 (en) 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
US7687291B2 (en) * 2005-03-25 2010-03-30 Trumpf Photonics Inc. Laser facet passivation
JP4979011B2 (ja) * 2007-07-20 2012-07-18 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
DE102007062050B4 (de) 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers
EP2883885A1 (en) 2013-12-13 2015-06-17 Borealis AG Multistage process for producing polyethylene compositions
US9972968B2 (en) 2016-04-20 2018-05-15 Trumpf Photonics, Inc. Passivation of laser facets and systems for performing the same
US10418781B1 (en) 2018-07-06 2019-09-17 Ii-Vi Delaware, Inc. Quantum well passivation structure for laser facets
CN113257960A (zh) * 2021-04-13 2021-08-13 深圳市思坦科技有限公司 Micro LED芯片的加工方法、Micro LED芯片以及显示模组

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62238678A (ja) * 1986-04-09 1987-10-19 Fujitsu Ltd 半導体発光装置
JP2740170B2 (ja) * 1987-08-06 1998-04-15 日本電気株式会社 半導体レーザの共振器製造方法
DE68915763T2 (de) * 1989-09-07 1994-12-08 Ibm Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden.

Also Published As

Publication number Publication date
JPH0856057A (ja) 1996-02-27
CA2148655A1 (en) 1995-11-06
EP0684671A1 (en) 1995-11-29
ITMI940859A1 (it) 1995-11-04
ITMI940859A0 (it) 1994-05-04

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Effective date: 19990430