IT1280041B1 - Procedimento per il tiraggio di un monocristallo di silicio - Google Patents

Procedimento per il tiraggio di un monocristallo di silicio

Info

Publication number
IT1280041B1
IT1280041B1 IT94RM000778A ITRM940778A IT1280041B1 IT 1280041 B1 IT1280041 B1 IT 1280041B1 IT 94RM000778 A IT94RM000778 A IT 94RM000778A IT RM940778 A ITRM940778 A IT RM940778A IT 1280041 B1 IT1280041 B1 IT 1280041B1
Authority
IT
Italy
Prior art keywords
procedure
silicon monocrystal
monocrystal
silicon
Prior art date
Application number
IT94RM000778A
Other languages
English (en)
Inventor
Ammon Wilfried Von
Erich Dornberger
Hans Oelkrug
Peter Gerlach
Franz Segieth
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25932158&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT1280041(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from DE4414947A external-priority patent/DE4414947C2/de
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of ITRM940778A0 publication Critical patent/ITRM940778A0/it
Publication of ITRM940778A1 publication Critical patent/ITRM940778A1/it
Application granted granted Critical
Publication of IT1280041B1 publication Critical patent/IT1280041B1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT94RM000778A 1993-12-16 1994-11-28 Procedimento per il tiraggio di un monocristallo di silicio IT1280041B1 (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4343051 1993-12-16
DE4414947A DE4414947C2 (de) 1993-12-16 1994-04-28 Verfahren zum Ziehen eines Einkristalls aus Silicium

Publications (3)

Publication Number Publication Date
ITRM940778A0 ITRM940778A0 (it) 1994-11-28
ITRM940778A1 ITRM940778A1 (it) 1996-05-28
IT1280041B1 true IT1280041B1 (it) 1997-12-29

Family

ID=25932158

Family Applications (1)

Application Number Title Priority Date Filing Date
IT94RM000778A IT1280041B1 (it) 1993-12-16 1994-11-28 Procedimento per il tiraggio di un monocristallo di silicio

Country Status (3)

Country Link
US (1) US5487354A (it)
JP (1) JP2700773B2 (it)
IT (1) IT1280041B1 (it)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19529485A1 (de) * 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Bestimmung des Durchmessers eines wachsenden Einkristalls
JP4020987B2 (ja) * 1996-01-19 2007-12-12 信越半導体株式会社 ウエーハ周辺部に結晶欠陥がないシリコン単結晶およびその製造方法
DE19711922A1 (de) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
JP3449729B2 (ja) * 1997-04-09 2003-09-22 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 単結晶シリコンウエハを製造する方法
US6254672B1 (en) * 1997-04-09 2001-07-03 Memc Electronic Materials, Inc. Low defect density self-interstitial dominated silicon
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
JPH1179889A (ja) 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
JP3460551B2 (ja) * 1997-11-11 2003-10-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
JP3747123B2 (ja) 1997-11-21 2006-02-22 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法及びシリコン単結晶ウエーハ
JP3955375B2 (ja) 1998-01-19 2007-08-08 信越半導体株式会社 シリコン単結晶の製造方法およびシリコン単結晶ウエーハ
JP3943717B2 (ja) 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
EP1090166B1 (en) 1998-06-26 2002-03-27 MEMC Electronic Materials, Inc. Process for growth of defect free silicon crystals of arbitrarily large diameters
CN1155074C (zh) * 1998-09-02 2004-06-23 Memc电子材料有限公司 从低缺陷密度的单晶硅上制备硅-绝缘体结构
US6284039B1 (en) * 1998-10-14 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
JP4875800B2 (ja) 1998-10-14 2012-02-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 単結晶シリコンウエハの製造方法
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
JP2000154070A (ja) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd セラミックス三次元構造体及びその製造方法
DE60010496T2 (de) * 1999-09-23 2005-04-07 Memc Electronic Materials, Inc. Czochralski-Verfahren zur Herstellung Silizium-Einkristalle durch Steuerung der Abkühlgeschwindigkeit
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
US6391662B1 (en) 1999-09-23 2002-05-21 Memc Electronic Materials, Inc. Process for detecting agglomerated intrinsic point defects by metal decoration
JP3901092B2 (ja) 2000-06-30 2007-04-04 信越半導体株式会社 シリコン単結晶の製造方法
KR100374703B1 (ko) * 2000-09-04 2003-03-04 주식회사 실트론 단결정 실리콘 웨이퍼,잉곳 및 그 제조방법
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
JP4439810B2 (ja) * 2001-01-26 2010-03-24 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 酸化誘起積層欠陥を実質的に有さない空孔優勢コアを有する低欠陥密度シリコン
DE102004021113B4 (de) * 2004-04-29 2006-04-20 Siltronic Ag SOI-Scheibe und Verfahren zu ihrer Herstellung
DE102005028202B4 (de) * 2005-06-17 2010-04-15 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben aus Silizium
JP4929817B2 (ja) * 2006-04-25 2012-05-09 信越半導体株式会社 基準反射体と融液面との距離の測定方法、及びこれを用いた融液面位置の制御方法、並びにシリコン単結晶の製造装置
WO2007137182A2 (en) * 2006-05-19 2007-11-29 Memc Electronic Materials, Inc. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
JP5167651B2 (ja) * 2007-02-08 2013-03-21 信越半導体株式会社 遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法
JP5577873B2 (ja) 2010-06-16 2014-08-27 信越半導体株式会社 遮熱部材下端面と原料融液面との間の距離の測定方法、遮熱部材下端面と原料融液面との間の距離の制御方法、シリコン単結晶の製造方法
JP5724400B2 (ja) 2011-01-19 2015-05-27 信越半導体株式会社 単結晶製造装置及び単結晶製造方法
JP5682471B2 (ja) 2011-06-20 2015-03-11 信越半導体株式会社 シリコンウェーハの製造方法
US12571124B2 (en) 2020-12-01 2026-03-10 Shin-Etsu Handotai Co., Ltd. Method for measuring distance between lower end surface of heat shielding member and surface of raw material melt, method for controlling distance between lower end surface of heat shielding member and surface of raw material melt and method for manufacturing silicon single crystal

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2821481C2 (de) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze
DE3027262A1 (de) * 1980-07-18 1982-02-11 Skf Kugellagerfabriken Gmbh, 8720 Schweinfurt Im ziehverfahren hergestellte, duennwandige lagerbuechse
JPS6131382A (ja) * 1984-07-20 1986-02-13 Sumitomo Electric Ind Ltd 化合物半導体単結晶の引上方法
US4981549A (en) * 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
US5078830A (en) * 1989-04-10 1992-01-07 Mitsubishi Metal Corporation Method for growing single crystal
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JP3016897B2 (ja) * 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置

Also Published As

Publication number Publication date
JPH07257991A (ja) 1995-10-09
JP2700773B2 (ja) 1998-01-21
ITRM940778A0 (it) 1994-11-28
ITRM940778A1 (it) 1996-05-28
US5487354A (en) 1996-01-30

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