IT1282404B1 - Metodo e circuito per controllare transistori di potenza in una configurazuione a semiponte con segnali di controllo riferiti - Google Patents

Metodo e circuito per controllare transistori di potenza in una configurazuione a semiponte con segnali di controllo riferiti

Info

Publication number
IT1282404B1
IT1282404B1 IT96MI000869A ITMI960869A IT1282404B1 IT 1282404 B1 IT1282404 B1 IT 1282404B1 IT 96MI000869 A IT96MI000869 A IT 96MI000869A IT MI960869 A ITMI960869 A IT MI960869A IT 1282404 B1 IT1282404 B1 IT 1282404B1
Authority
IT
Italy
Prior art keywords
circuit
control signals
power transistors
bridge configuration
checking power
Prior art date
Application number
IT96MI000869A
Other languages
English (en)
Inventor
Chris Choi Chongwook
David C Tam
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of ITMI960869A0 publication Critical patent/ITMI960869A0/it
Publication of ITMI960869A1 publication Critical patent/ITMI960869A1/it
Application granted granted Critical
Publication of IT1282404B1 publication Critical patent/IT1282404B1/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/538—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
IT96MI000869A 1995-05-04 1996-05-03 Metodo e circuito per controllare transistori di potenza in una configurazuione a semiponte con segnali di controllo riferiti IT1282404B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/433,841 US5502412A (en) 1995-05-04 1995-05-04 Method and circuit for driving power transistors in a half bridge configuration from control signals referenced to any potential between the line voltage and the line voltage return and integrated circuit incorporating the circuit

Publications (3)

Publication Number Publication Date
ITMI960869A0 ITMI960869A0 (it) 1996-05-03
ITMI960869A1 ITMI960869A1 (it) 1997-11-03
IT1282404B1 true IT1282404B1 (it) 1998-03-20

Family

ID=23721743

Family Applications (1)

Application Number Title Priority Date Filing Date
IT96MI000869A IT1282404B1 (it) 1995-05-04 1996-05-03 Metodo e circuito per controllare transistori di potenza in una configurazuione a semiponte con segnali di controllo riferiti

Country Status (8)

Country Link
US (1) US5502412A (it)
JP (1) JP3069043B2 (it)
KR (1) KR100196338B1 (it)
DE (1) DE19617358A1 (it)
FR (1) FR2733860B1 (it)
GB (1) GB2300533B (it)
IT (1) IT1282404B1 (it)
SG (1) SG63642A1 (it)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2896342B2 (ja) * 1995-05-04 1999-05-31 インターナショナル・レクチファイヤー・コーポレーション 半波ブリッジ構成における複数のパワートランジスタを駆動し、かつ出力ノードの過度の負の振動を許容する方法及び回路、並びに上記回路を組み込む集積回路
US5719521A (en) * 1996-10-29 1998-02-17 Philips Electronics North America Corporation Integrated half-bridge timing control circuit
JP3678891B2 (ja) * 1997-08-07 2005-08-03 松下電器産業株式会社 Ｐｗｍインバータ用出力回路
US6137339A (en) * 1997-08-28 2000-10-24 Lucent Technologies Inc. High voltage integrated CMOS driver circuit
EP0977264B1 (en) * 1998-07-31 2006-04-26 Freescale Semiconductor, Inc. Semiconductor structure for driver circuits with level shifting
US6201429B1 (en) 1999-05-20 2001-03-13 Analog Microelectronics, Inc. Clamped cascode level shifter circuit
US6304466B1 (en) 2000-03-02 2001-10-16 Northrop Grumman Corporation Power conditioning for remotely mounted microwave power amplifier
EP1358709A2 (en) * 2001-02-06 2003-11-05 Harman International Industries, Inc. Half-bridge gate driver circuit
JP4319362B2 (ja) * 2001-07-12 2009-08-26 三菱電機株式会社 逆レベルシフト回路およびパワー用半導体装置
US6897492B2 (en) * 2002-02-04 2005-05-24 Ixys Corporation Power device with bi-directional level shift circuit
US6759692B1 (en) * 2002-02-04 2004-07-06 Ixys Corporation Gate driver with level shift circuit
US6967518B2 (en) * 2002-06-12 2005-11-22 International Rectifier Corporation High voltage level shifting IC with under-ground voltage swing withstanding capability
JP4003575B2 (ja) * 2002-08-02 2007-11-07 ヤマハ株式会社 Ｄ級増幅器
JP2004274719A (ja) * 2003-02-18 2004-09-30 Fujitsu Hitachi Plasma Display Ltd プリドライブ回路、容量性負荷駆動回路及びプラズマディスプレイ装置
JP3930498B2 (ja) 2003-11-25 2007-06-13 株式会社東芝 レベルシフト回路
US7330017B2 (en) * 2004-01-29 2008-02-12 Enpirion, Inc. Driver for a power converter and a method of driving a switch thereof
US7190195B2 (en) * 2004-03-29 2007-03-13 Rohm Co., Ltd. Input circuit and output circuit
JP2006017990A (ja) * 2004-07-01 2006-01-19 Fujitsu Hitachi Plasma Display Ltd 表示装置の動回路及びプラズマディスプレイ装置
US7619865B2 (en) 2004-08-02 2009-11-17 International Rectifier Corporation Electronic circuit protection device with I2t or other function
JP4139422B2 (ja) * 2004-08-26 2008-08-27 松下電器産業株式会社 モジュール
JP4532244B2 (ja) 2004-11-19 2010-08-25 日立プラズマディスプレイ株式会社 プラズマディスプレイ装置
EP1908049A2 (en) * 2005-06-24 2008-04-09 International Rectifier Corporation Semiconductor half-bridge module with low inductance
US7557644B2 (en) * 2005-10-07 2009-07-07 International Rectifier Corporation Fully integrated floating power supply for high voltage technologies including N-EPI biasing
US8063613B2 (en) * 2006-12-11 2011-11-22 International Rectifier Corporation Power converter driver with split power supply
RU2326484C1 (ru) * 2007-03-27 2008-06-10 Государственное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" Полумостовой транзисторный инвертор
JP4416006B2 (ja) * 2007-05-14 2010-02-17 ヤマハ株式会社 Ｄ級増幅器
US7671638B2 (en) * 2007-06-28 2010-03-02 International Rectifier Corporation Negative N-epi biasing sensing and high side gate driver output spurious turn-on prevention due to N-epi P-sub diode conduction during N-epi negative transient voltage
WO2009128130A1 (ja) * 2008-04-14 2009-10-22 株式会社フライングモール デジタル電力増幅器
US8044699B1 (en) * 2010-07-19 2011-10-25 Polar Semiconductor, Inc. Differential high voltage level shifter
RU2457607C1 (ru) * 2011-06-23 2012-07-27 Евгений Владимирович Куприянов Полумостовой транзисторный инвертор
US9087707B2 (en) * 2012-03-26 2015-07-21 Infineon Technologies Austria Ag Semiconductor arrangement with a power transistor and a high voltage device integrated in a common semiconductor body
EP3100269B1 (en) * 2014-01-28 2020-10-07 Schneider Electric IT Corporation Bipolar gate driver
US9401612B2 (en) 2014-09-16 2016-07-26 Navitas Semiconductor Inc. Pulsed level shift and inverter circuits for GaN devices
US9571093B2 (en) 2014-09-16 2017-02-14 Navitas Semiconductor, Inc. Half bridge driver circuits
CN105024531B (zh) * 2015-07-28 2017-12-01 英特格灵芯片(天津)有限公司 一种dv/dt检测与保护装置及方法
US9831867B1 (en) 2016-02-22 2017-11-28 Navitas Semiconductor, Inc. Half bridge driver circuits
US10164481B2 (en) * 2016-11-21 2018-12-25 Witricity Corporation Current shunt monitor
US10348139B2 (en) 2017-09-29 2019-07-09 Witricity Corporation Configurable wireless charging transmit and receive monitoring device
US20260180579A1 (en) * 2024-12-20 2026-06-25 Renesas Design (UK) Limited Level shifter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4767946A (en) * 1987-01-12 1988-08-30 Tektronix, Inc. High-speed supply independent level shifter
US4792704A (en) * 1987-05-01 1988-12-20 International Business Machines Corporation Scaled voltage level translator circuit
US4791312A (en) * 1987-06-08 1988-12-13 Grumman Aerospace Corporation Programmable level shifting interface device
US4974142A (en) * 1990-02-20 1990-11-27 Leslie Alexander D Bootstrap drive for a switch-mode power converter
US5274274A (en) * 1992-03-23 1993-12-28 Power Integrations, Inc. Dual threshold differential discriminator
US5408150A (en) * 1992-06-04 1995-04-18 Linear Technology Corporation Circuit for driving two power mosfets in a half-bridge configuration
US5373435A (en) * 1993-05-07 1994-12-13 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
US5440258A (en) * 1994-02-08 1995-08-08 International Business Machines Corporation Off-chip driver with voltage regulated predrive
US5414314A (en) * 1994-06-09 1995-05-09 Maxim Integrated Products High swing interface stage

Also Published As

Publication number Publication date
JPH08335863A (ja) 1996-12-17
DE19617358A1 (de) 1996-11-07
KR100196338B1 (ko) 1999-07-01
ITMI960869A1 (it) 1997-11-03
ITMI960869A0 (it) 1996-05-03
GB9609473D0 (en) 1996-07-10
FR2733860A1 (fr) 1996-11-08
US5502412A (en) 1996-03-26
KR960043305A (ko) 1996-12-23
SG63642A1 (en) 1999-03-30
FR2733860B1 (fr) 1998-03-13
GB2300533A (en) 1996-11-06
JP3069043B2 (ja) 2000-07-24
GB2300533B (en) 1999-11-10

Similar Documents

Publication Publication Date Title
DE69620124D1 (de) Wechselrichtersteuerungsverfahren und -vorrichtung
KR960016111A (ko) 시각 신호 발생용 회로 및 방법
SG63642A1 (en) Method and circuit for driving power transistors
DE69430962D1 (de) Bilddefokusierungsverfahren und -vorrichtung
FI961905L (fi) Menetelmä hiilihydraattien hapettamiseksi
AU5320694A (en) Improved device for tissue repair and method for employing same
FI20000061L (fi) Substituoituja alkanohydroksaamihappoja ja menetelmä TNFalfa-tasojen alentamiseksi
FI961414A7 (fi) Menetelmä ja laite tehon ohjaamiseksi tietoliikennejärjestelmässä
DK0741594T3 (da) Fototermisk terapeutisk anordning og metode
FI945552A7 (fi) Sähkölaite ja menetelmä antibioottien generoimiseksi
FI941779A7 (fi) Kanavanvaihtomenetelmä ja -järjestely
DE69632555D1 (de) Aufzeichnungsgerät und -verfahren
DE69607263D1 (de) Aufnahme- und Ausgabevorrichtung
DE69317266D1 (de) Interaktives Verkehrsüberwachungsverfahren und -vorrichtung
KR970704918A (ko) 단결정 제조장치 및 제조방법
DE69316606D1 (de) Verbindungsanordnung zwischen Platten sowie Verbindungsverfahren
KR970004627A (ko) 모드 자동전환장치 및 방법
NO940534D0 (no) Integrert strömforsynings- og signal transmisjonssystem
DE69628873D1 (de) Ausrichtgerät und -verfahren
DE69707677D1 (de) Verzögerungsschaltung und -verfahren
FI961753L (fi) Laite ja menetelmä signaalin muokkaamiseksi ja sen tehon säätämiseksi lähettimessä
DE69428747D1 (de) Energiekontrollvorrichtung und -verfahren
DE69409379D1 (de) Ultraschallabtastgerät und -verfahren
DE69431857D1 (de) Ausgabeverfahren und -gerät
DE69327893D1 (de) Ausgabesteuerverfahren und -gerät

Legal Events

Date Code Title Description
0001 Granted