IT1304670B1 - Circuito in tecnologia cmos per la generazione di un riferimento incorrente. - Google Patents

Circuito in tecnologia cmos per la generazione di un riferimento incorrente.

Info

Publication number
IT1304670B1
IT1304670B1 IT1998TO000831A ITTO980831A IT1304670B1 IT 1304670 B1 IT1304670 B1 IT 1304670B1 IT 1998TO000831 A IT1998TO000831 A IT 1998TO000831A IT TO980831 A ITTO980831 A IT TO980831A IT 1304670 B1 IT1304670 B1 IT 1304670B1
Authority
IT
Italy
Prior art keywords
generation
circuit
current reference
cmos technology
cmos
Prior art date
Application number
IT1998TO000831A
Other languages
English (en)
Inventor
Marco Burzio
Emanuele Balistreri
Original Assignee
Cselt Centro Studi Lab Telecom
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cselt Centro Studi Lab Telecom filed Critical Cselt Centro Studi Lab Telecom
Priority to IT1998TO000831A priority Critical patent/IT1304670B1/it
Priority to US09/409,033 priority patent/US6166587A/en
Priority to DE69914037T priority patent/DE69914037T2/de
Priority to EP99119497A priority patent/EP0992871B1/en
Priority to JP28288799A priority patent/JP3181898B2/ja
Priority to CA002284956A priority patent/CA2284956C/en
Publication of ITTO980831A1 publication Critical patent/ITTO980831A1/it
Application granted granted Critical
Publication of IT1304670B1 publication Critical patent/IT1304670B1/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
    • H03L7/089—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
    • H03L7/0891—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses the up-down pulses controlling source and sink current generators, e.g. a charge pump
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
IT1998TO000831A 1998-10-05 1998-10-05 Circuito in tecnologia cmos per la generazione di un riferimento incorrente. IT1304670B1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT1998TO000831A IT1304670B1 (it) 1998-10-05 1998-10-05 Circuito in tecnologia cmos per la generazione di un riferimento incorrente.
US09/409,033 US6166587A (en) 1998-10-05 1999-09-29 CMOS circuit for generating a current reference, the circuit comprising a transistor in a weak inversion region
DE69914037T DE69914037T2 (de) 1998-10-05 1999-10-01 CMOS-Schaltung zur Erzeugung einer Stromreferenz
EP99119497A EP0992871B1 (en) 1998-10-05 1999-10-01 CMOS circuit for generating a current reference
JP28288799A JP3181898B2 (ja) 1998-10-05 1999-10-04 基準電流発生用ｃｍｏｓ回路
CA002284956A CA2284956C (en) 1998-10-05 1999-10-04 Cmos circuit for generating a current reference

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1998TO000831A IT1304670B1 (it) 1998-10-05 1998-10-05 Circuito in tecnologia cmos per la generazione di un riferimento incorrente.

Publications (2)

Publication Number Publication Date
ITTO980831A1 ITTO980831A1 (it) 2000-04-05
IT1304670B1 true IT1304670B1 (it) 2001-03-28

Family

ID=11417077

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1998TO000831A IT1304670B1 (it) 1998-10-05 1998-10-05 Circuito in tecnologia cmos per la generazione di un riferimento incorrente.

Country Status (6)

Country Link
US (1) US6166587A (it)
EP (1) EP0992871B1 (it)
JP (1) JP3181898B2 (it)
CA (1) CA2284956C (it)
DE (1) DE69914037T2 (it)
IT (1) IT1304670B1 (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346848B1 (en) * 2000-06-29 2002-02-12 International Business Machines Corporation Apparatus and method for generating current linearly dependent on temperature
US6466081B1 (en) * 2000-11-08 2002-10-15 Applied Micro Circuits Corporation Temperature stable CMOS device
US6304109B1 (en) * 2000-12-05 2001-10-16 Analog Devices, Inc. High gain CMOS amplifier
GB0211564D0 (en) 2002-05-21 2002-06-26 Tournaz Technology Ltd Reference circuit
KR100668414B1 (ko) 2004-12-10 2007-01-16 한국전자통신연구원 기준 전류 발생기

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2494519A1 (fr) * 1980-11-14 1982-05-21 Efcis Generateur de courant integre en technologie cmos
US4645948A (en) * 1984-10-01 1987-02-24 At&T Bell Laboratories Field effect transistor current source
US4684898A (en) * 1985-05-15 1987-08-04 Signetics Corporation Temperature and process variation compensation for a delta demodulation decoder
US5157285A (en) * 1991-08-30 1992-10-20 Allen Michael J Low noise, temperature-compensated, and process-compensated current and voltage control circuits
US5331295A (en) * 1993-02-03 1994-07-19 National Semiconductor Corporation Voltage controlled oscillator with efficient process compensation
JP3157746B2 (ja) * 1997-06-30 2001-04-16 日本電気アイシーマイコンシステム株式会社 定電流回路
US5939933A (en) * 1998-02-13 1999-08-17 Adaptec, Inc. Intentionally mismatched mirror process inverse current source

Also Published As

Publication number Publication date
DE69914037T2 (de) 2004-07-08
CA2284956A1 (en) 2000-04-05
EP0992871B1 (en) 2004-01-07
DE69914037D1 (de) 2004-02-12
CA2284956C (en) 2003-08-12
EP0992871A2 (en) 2000-04-12
ITTO980831A1 (it) 2000-04-05
EP0992871A3 (en) 2000-04-26
JP3181898B2 (ja) 2001-07-03
US6166587A (en) 2000-12-26
JP2000122740A (ja) 2000-04-28

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