IT1311280B1 - Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione. - Google Patents

Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione.

Info

Publication number
IT1311280B1
IT1311280B1 IT1999TO001151A ITTO991151A IT1311280B1 IT 1311280 B1 IT1311280 B1 IT 1311280B1 IT 1999TO001151 A IT1999TO001151 A IT 1999TO001151A IT TO991151 A ITTO991151 A IT TO991151A IT 1311280 B1 IT1311280 B1 IT 1311280B1
Authority
IT
Italy
Prior art keywords
high voltage
manufacturing process
resistor structure
reduced dimension
integrated resistor
Prior art date
Application number
IT1999TO001151A
Other languages
English (en)
Inventor
Delfo Sanfilippo
Davide Patti
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999TO001151A priority Critical patent/IT1311280B1/it
Publication of ITTO991151A0 publication Critical patent/ITTO991151A0/it
Priority to US09/746,373 priority patent/US6696916B2/en
Publication of ITTO991151A1 publication Critical patent/ITTO991151A1/it
Application granted granted Critical
Publication of IT1311280B1 publication Critical patent/IT1311280B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin-film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1013—Thin film varistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT1999TO001151A 1999-12-24 1999-12-24 Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione. IT1311280B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1999TO001151A IT1311280B1 (it) 1999-12-24 1999-12-24 Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione.
US09/746,373 US6696916B2 (en) 1999-12-24 2000-12-22 Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999TO001151A IT1311280B1 (it) 1999-12-24 1999-12-24 Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione.

Publications (3)

Publication Number Publication Date
ITTO991151A0 ITTO991151A0 (it) 1999-12-24
ITTO991151A1 ITTO991151A1 (it) 2001-06-25
IT1311280B1 true IT1311280B1 (it) 2002-03-12

Family

ID=11418334

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999TO001151A IT1311280B1 (it) 1999-12-24 1999-12-24 Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione.

Country Status (2)

Country Link
US (1) US6696916B2 (it)
IT (1) IT1311280B1 (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1311309B1 (it) * 1999-12-10 2002-03-12 St Microelectronics Srl Resistore verticale integrato ad alta tensione e relativo processo difabbricazione.
JP2002134692A (ja) 2000-10-20 2002-05-10 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4744103B2 (ja) * 2004-06-28 2011-08-10 富士通セミコンダクター株式会社 抵抗素子を含む半導体装置及びその製造方法
US8717015B2 (en) * 2010-02-12 2014-05-06 Robert Bosch Gmbh Linear-with-magnetic field magnetoresistance device
US20140159180A1 (en) * 2012-12-06 2014-06-12 Agency For Science, Technology And Research Semiconductor resistor structure and semiconductor photomultiplier device
US10431357B2 (en) * 2017-11-13 2019-10-01 Texas Instruments Incorporated Vertically-constructed, temperature-sensing resistors and methods of making the same
US20200194581A1 (en) * 2018-12-18 2020-06-18 Vanguard International Semiconductor Corporation Semiconductor device and method for forming the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886001A (en) * 1974-05-02 1975-05-27 Nat Semiconductor Corp Method of fabricating a vertical channel FET resistor
DE2916114A1 (de) * 1978-04-21 1979-10-31 Hitachi Ltd Halbleitervorrichtung
JPS63244765A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 拡散抵抗を有する集積回路
US4933739A (en) * 1988-04-26 1990-06-12 Eliyahou Harari Trench resistor structures for compact semiconductor memory and logic devices
US5591655A (en) * 1995-02-28 1997-01-07 Sgs-Thomson Microelectronics, Inc. Process for manufacturing a vertical switched-emitter structure with improved lateral isolation
KR100331296B1 (ko) * 1995-12-20 2002-06-20 클라크 3세 존 엠. 에피택셜 핀치 저항기 및 그 형성 방법
US5880513A (en) * 1996-04-18 1999-03-09 Harris Corporation Asymmetric snubber resistor
US5945699A (en) * 1997-05-13 1999-08-31 Harris Corporation Reduce width, differentially doped vertical JFET device

Also Published As

Publication number Publication date
US6696916B2 (en) 2004-02-24
US20020057187A1 (en) 2002-05-16
ITTO991151A0 (it) 1999-12-24
ITTO991151A1 (it) 2001-06-25

Similar Documents

Publication Publication Date Title
DE69833743D1 (de) Herstellungmethode einer integrierte Randstruktur für Hochspannung-Halbleiteranordnungen
DE60037057D1 (de) Halbleiterelement und Herstellungsverfahren dafür
DE60028034D1 (de) Elektrode und herstellungsmethode für eine elektrode
DE60044221D1 (de) Lumineszierendes Halbleiterelement und Verfahren zu dessen Herstellung
BR0110160B1 (pt) extremidade de lata e processo de fabricação da mesma.
DE19983188T1 (de) Siliziumhalbleitersubstrat und Verfahren zu dessen Herstellung
DE69941879D1 (de) Feldeffekt-halbleiterbauelement und verfahren zu dessen herstellung
SG103315A1 (en) Precision high-frequency capacitor formed on semiconductor substrate
DE60042666D1 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE60141211D1 (de) Polysilizium-halbleiterbauteil und verfahren zu dessen herstellung
EP1247294A4 (en) PACKAGING OF INTEGRATED CIRCUITS AND VERTICAL INTEGRATION
DE60238123D1 (de) Organische halbleiterschicht und verfahren zu ihrer herstellung
DE69914821D1 (de) Hochsichtbare Logostruktur für Reifenseitenwand und Herstellungsverfahren
ITMI20011340A0 (it) Pfpe aventi almeno un terminale alchiletereo e relativo processo dipreparazione
DE69715472D1 (de) Herstellungsverfahren für einen integrierten schaltkreis und der damit hergetellte integrierte schaltkreis
IT1311280B1 (it) Struttura di resistore integrato verticale di ingombro ridotto peralta tensione e relativo processo di fabbricazione.
DE69907851D1 (de) Mikrometer
DE69936677D1 (de) Schutzstruktur für eine integrierte Schaltungshalbleiteranordnung gegen elektrostatische Entladungen
PT1243932E (pt) Método para testar o estado de cravação de terminais
DE69839906D1 (de) Herstellungsverfahren für eine integrierte Schaltung
BR0013627B1 (pt) método de fabricação de extremidades de lata
ITTO991086A0 (it) Resistore verticale integrato ad alta tensione e relativo processo di fabbricazione.
SG88772A1 (en) Cylindrical semiconductor capacitor and manufacturing method therefor
DE69941860D1 (de) Halbleiterlaser und Herstellungsverfahren
DE60227451D1 (de) Halbleiterbauelement und dessen Herstellungsverfahren