IT1320256B1 - Composizione di fotoresist contenente un fotogeneratore di base con un fotogeneratore di acido. - Google Patents
Composizione di fotoresist contenente un fotogeneratore di base con un fotogeneratore di acido.Info
- Publication number
- IT1320256B1 IT1320256B1 IT2000TO000876A ITTO20000876A IT1320256B1 IT 1320256 B1 IT1320256 B1 IT 1320256B1 IT 2000TO000876 A IT2000TO000876 A IT 2000TO000876A IT TO20000876 A ITTO20000876 A IT TO20000876A IT 1320256 B1 IT1320256 B1 IT 1320256B1
- Authority
- IT
- Italy
- Prior art keywords
- photogenerator
- basic
- composition
- acid
- photoresist containing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-1999-0040534A KR100481601B1 (ko) | 1999-09-21 | 1999-09-21 | 광산 발생제와 함께 광염기 발생제를 포함하는 포토레지스트 조성물 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITTO20000876A0 ITTO20000876A0 (it) | 2000-09-19 |
| ITTO20000876A1 ITTO20000876A1 (it) | 2002-03-19 |
| IT1320256B1 true IT1320256B1 (it) | 2003-11-26 |
Family
ID=19612358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2000TO000876A IT1320256B1 (it) | 1999-09-21 | 2000-09-19 | Composizione di fotoresist contenente un fotogeneratore di base con un fotogeneratore di acido. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6395451B1 (it) |
| JP (1) | JP3875474B2 (it) |
| KR (1) | KR100481601B1 (it) |
| CN (1) | CN1258119C (it) |
| DE (1) | DE10046891A1 (it) |
| FR (1) | FR2798747B1 (it) |
| GB (1) | GB2354596B (it) |
| IT (1) | IT1320256B1 (it) |
| NL (1) | NL1016224C2 (it) |
| TW (1) | TWI262358B (it) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100583095B1 (ko) * | 2000-06-30 | 2006-05-24 | 주식회사 하이닉스반도체 | 광산 발생제와 함께 광 라디칼 발생제(prg)를 포함하는포토레지스트 조성물 |
| US6548226B2 (en) * | 2001-02-09 | 2003-04-15 | United Microelectronics Corp. | Photolithographic process |
| DE10120676B4 (de) * | 2001-04-27 | 2005-06-16 | Infineon Technologies Ag | Verfahren zur Strukturierung einer Photolackschicht |
| DE10120673B4 (de) * | 2001-04-27 | 2007-01-25 | Infineon Technologies Ag | Verfahren zur Strukturierung einer Photolackschicht |
| DE10120674B4 (de) | 2001-04-27 | 2005-06-16 | Infineon Technologies Ag | Verfahren zur Strukturierung einer Photolackschicht |
| US6696216B2 (en) * | 2001-06-29 | 2004-02-24 | International Business Machines Corporation | Thiophene-containing photo acid generators for photolithography |
| JP3986911B2 (ja) * | 2002-07-15 | 2007-10-03 | 松下電器産業株式会社 | パターン形成材料及びパターン形成方法 |
| KR100611394B1 (ko) * | 2003-11-20 | 2006-08-11 | 주식회사 하이닉스반도체 | 유기 반사 방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법 |
| KR100570211B1 (ko) * | 2003-12-24 | 2006-04-12 | 주식회사 하이닉스반도체 | 유기 반사방지막용 가교제 중합체, 이를 포함하는 유기반사 방지막 조성물 및 이를 이용한 포토레지스트의 패턴형성 방법 |
| KR100784337B1 (ko) | 2004-11-12 | 2007-12-13 | 한국생명공학연구원 | 신규한 o-아실옥심 유도체, 그의 제조방법 및 이를유효성분으로 하는 심장순환계 질환의 예방 및 치료용약학 조성물 |
| JP4452632B2 (ja) * | 2005-01-24 | 2010-04-21 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
| KR101115089B1 (ko) * | 2005-03-02 | 2012-02-29 | 주식회사 동진쎄미켐 | 유기 반사방지막 형성용 유기 중합체 및 이를 포함하는 유기 조성물 |
| KR20060109697A (ko) * | 2005-04-18 | 2006-10-23 | 주식회사 하이닉스반도체 | 포토레지스트 중합체, 이를 포함하는 포토레지스트 조성물및 이를 이용한 반도체 소자의 패턴 형성 방법 |
| JP2007056221A (ja) * | 2005-08-26 | 2007-03-08 | Jsr Corp | 重合体、感放射線性樹脂組成物および液晶表示素子用スペーサー |
| JP4699140B2 (ja) * | 2005-08-29 | 2011-06-08 | 東京応化工業株式会社 | パターン形成方法 |
| WO2008015635A2 (en) | 2006-08-02 | 2008-02-07 | Nxp B.V. | Photolithography |
| JP5276821B2 (ja) * | 2007-10-01 | 2013-08-28 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
| US8236476B2 (en) | 2008-01-08 | 2012-08-07 | International Business Machines Corporation | Multiple exposure photolithography methods and photoresist compositions |
| JP5175579B2 (ja) * | 2008-02-25 | 2013-04-03 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP5276958B2 (ja) * | 2008-11-19 | 2013-08-28 | 東京応化工業株式会社 | レジスト組成物、およびレジストパターン形成方法 |
| US8957212B2 (en) * | 2008-12-02 | 2015-02-17 | Wako Pure Chemical Industries, Ltd. | Photobase generator |
| JP5573356B2 (ja) * | 2009-05-26 | 2014-08-20 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| US8216767B2 (en) | 2009-09-08 | 2012-07-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Patterning process and chemical amplified photoresist with a photodegradable base |
| US8956806B2 (en) * | 2009-09-18 | 2015-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and patterning process |
| US8512939B2 (en) * | 2009-09-25 | 2013-08-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist stripping technique |
| JP5624742B2 (ja) * | 2009-10-02 | 2014-11-12 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法 |
| US9599895B2 (en) * | 2011-04-12 | 2017-03-21 | Empire Technology Development Llc | Lithography using photoresist with photoinitiator and photoinhibitor |
| JP5783861B2 (ja) * | 2011-09-15 | 2015-09-24 | 東京応化工業株式会社 | レジストパターン形成方法 |
| JP5789460B2 (ja) * | 2011-09-22 | 2015-10-07 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
| KR20130039124A (ko) * | 2011-10-11 | 2013-04-19 | 삼성전자주식회사 | 반도체 소자의 패턴 형성방법 |
| JP5764478B2 (ja) * | 2011-11-24 | 2015-08-19 | 東京応化工業株式会社 | レジストパターン形成方法 |
| JP6002467B2 (ja) * | 2012-01-11 | 2016-10-05 | 東京応化工業株式会社 | レジストパターン形成方法、レジスト組成物 |
| JP5879209B2 (ja) * | 2012-06-21 | 2016-03-08 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
| JP5593357B2 (ja) * | 2012-09-18 | 2014-09-24 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| TWI652281B (zh) * | 2015-02-18 | 2019-03-01 | 日商住友電木股份有限公司 | 含有光產鹼劑的光可成像聚烯烴組成物 |
| TWI636326B (zh) * | 2015-05-15 | 2018-09-21 | Rohm And Haas Electronic Materials Korea Ltd. | 光鹼產生劑及包括其的光致抗蝕劑組成物 |
| KR20180088652A (ko) * | 2015-11-30 | 2018-08-06 | 프로메러스, 엘엘씨 | 광산발생제 및 염기 함유 영구유전체조성물 |
| JP2017173741A (ja) * | 2016-03-25 | 2017-09-28 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 感光性シロキサン組成物 |
| US11315798B2 (en) | 2016-04-08 | 2022-04-26 | Intel Corporation | Two-stage bake photoresist with releasable quencher |
| US11054742B2 (en) | 2018-06-15 | 2021-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV metallic resist performance enhancement via additives |
| JP7816208B2 (ja) * | 2022-03-11 | 2026-02-18 | 信越化学工業株式会社 | 化学増幅レジスト材料及びパターン形成方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02118650A (ja) * | 1988-10-28 | 1990-05-02 | Matsushita Electric Ind Co Ltd | パターン形成材料 |
| JP2687567B2 (ja) * | 1989-04-11 | 1997-12-08 | ソニー株式会社 | ポジ型レジスト及びレジストパターン形成方法 |
| JP2687578B2 (ja) * | 1989-05-11 | 1997-12-08 | ソニー株式会社 | 高感度レジスト及びレジストパターンの形成方法 |
| US5650261A (en) * | 1989-10-27 | 1997-07-22 | Rohm And Haas Company | Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system |
| JPH04362642A (ja) * | 1991-06-10 | 1992-12-15 | Konica Corp | 感光性組成物 |
| US5206117A (en) * | 1991-08-14 | 1993-04-27 | Labadie Jeffrey W | Photosensitive polyamic alkyl ester composition and process for its use |
| JP3317576B2 (ja) * | 1994-05-12 | 2002-08-26 | 富士写真フイルム株式会社 | ポジ型感光性樹脂組成物 |
| EP0718317B1 (en) * | 1994-12-20 | 2000-02-23 | Olin Microelectronic Chemicals, Inc. | Photoresist compositions |
| US6071667A (en) * | 1995-04-13 | 2000-06-06 | Hitachi Chemical Co., Ltd. | Photosensitive resin composition containing a photosensitive polyamide resin |
| US5942367A (en) * | 1996-04-24 | 1999-08-24 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group |
| JP3705657B2 (ja) * | 1996-09-05 | 2005-10-12 | 信越化学工業株式会社 | N,n−ジアルキルカルバミン酸2−ニトロベンジルエステル類の製造方法 |
| JP3514590B2 (ja) * | 1996-09-06 | 2004-03-31 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
| US6106999A (en) * | 1997-08-12 | 2000-08-22 | Mitsui Chemicals | Photosensitizer, visible light curable resin composition using the same, and use of the composition |
| JPH11295895A (ja) * | 1998-04-15 | 1999-10-29 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
| KR100593662B1 (ko) * | 1998-04-21 | 2006-10-11 | 삼성전자주식회사 | 개시제를 포함하는 반도체장치 제조용 포토레지스트 및 이를 이용한 포토리소그래피공정 |
| US6806022B1 (en) * | 1998-04-22 | 2004-10-19 | Fuji Photo Film Co., Ltd. | Positive photosensitive resin composition |
| JP4023003B2 (ja) * | 1998-04-23 | 2007-12-19 | 住友化学株式会社 | 化学増幅型ポジ型フォトレジスト組成物 |
-
1999
- 1999-09-21 KR KR10-1999-0040534A patent/KR100481601B1/ko not_active Expired - Fee Related
-
2000
- 2000-09-08 TW TW089118564A patent/TWI262358B/zh active
- 2000-09-13 GB GB0022375A patent/GB2354596B/en not_active Expired - Fee Related
- 2000-09-19 IT IT2000TO000876A patent/IT1320256B1/it active
- 2000-09-19 CN CNB001248502A patent/CN1258119C/zh not_active Expired - Fee Related
- 2000-09-20 FR FR0011972A patent/FR2798747B1/fr not_active Expired - Fee Related
- 2000-09-20 NL NL1016224A patent/NL1016224C2/nl not_active IP Right Cessation
- 2000-09-21 JP JP2000287440A patent/JP3875474B2/ja not_active Expired - Fee Related
- 2000-09-21 US US09/666,932 patent/US6395451B1/en not_active Expired - Fee Related
- 2000-09-21 DE DE10046891A patent/DE10046891A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB0022375D0 (en) | 2000-10-25 |
| FR2798747B1 (fr) | 2004-01-16 |
| JP3875474B2 (ja) | 2007-01-31 |
| DE10046891A1 (de) | 2001-05-10 |
| FR2798747A1 (fr) | 2001-03-23 |
| GB2354596A (en) | 2001-03-28 |
| ITTO20000876A0 (it) | 2000-09-19 |
| KR100481601B1 (ko) | 2005-04-08 |
| NL1016224A1 (nl) | 2001-03-22 |
| KR20010028348A (ko) | 2001-04-06 |
| US6395451B1 (en) | 2002-05-28 |
| CN1289069A (zh) | 2001-03-28 |
| JP2001133980A (ja) | 2001-05-18 |
| CN1258119C (zh) | 2006-05-31 |
| NL1016224C2 (nl) | 2001-05-30 |
| GB2354596B (en) | 2003-06-18 |
| TWI262358B (en) | 2006-09-21 |
| ITTO20000876A1 (it) | 2002-03-19 |
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