IT201600109764A1 - Sensore mems di tipo piezoelettrico, quale sensore di forza, sensore di pressione, sensore di deformazione o microfono, a sensibilita' migliorata - Google Patents

Sensore mems di tipo piezoelettrico, quale sensore di forza, sensore di pressione, sensore di deformazione o microfono, a sensibilita' migliorata

Info

Publication number
IT201600109764A1
IT201600109764A1 IT102016000109764A IT201600109764A IT201600109764A1 IT 201600109764 A1 IT201600109764 A1 IT 201600109764A1 IT 102016000109764 A IT102016000109764 A IT 102016000109764A IT 201600109764 A IT201600109764 A IT 201600109764A IT 201600109764 A1 IT201600109764 A1 IT 201600109764A1
Authority
IT
Italy
Prior art keywords
sensor
microphone
deformation
piezoelectric type
improved sensitivity
Prior art date
Application number
IT102016000109764A
Other languages
English (en)
Inventor
Domenico Giusti
Sebastiano Conti
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT102016000109764A priority Critical patent/IT201600109764A1/it
Priority to CN201720708385.6U priority patent/CN207891041U/zh
Priority to CN201710459683.0A priority patent/CN108017036B/zh
Priority to US15/629,518 priority patent/US10356531B2/en
Publication of IT201600109764A1 publication Critical patent/IT201600109764A1/it

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0037—For increasing stroke, i.e. achieve large displacement of actuated parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems ; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/308—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/802—Circuitry or processes for operating piezoelectric or electrostrictive devices not otherwise provided for, e.g. drive circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
IT102016000109764A 2016-10-31 2016-10-31 Sensore mems di tipo piezoelettrico, quale sensore di forza, sensore di pressione, sensore di deformazione o microfono, a sensibilita' migliorata IT201600109764A1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT102016000109764A IT201600109764A1 (it) 2016-10-31 2016-10-31 Sensore mems di tipo piezoelettrico, quale sensore di forza, sensore di pressione, sensore di deformazione o microfono, a sensibilita' migliorata
CN201720708385.6U CN207891041U (zh) 2016-10-31 2017-06-16 压电mems传感器、声换能器和电子器件
CN201710459683.0A CN108017036B (zh) 2016-10-31 2017-06-16 具有改进灵敏度的压电mems传感器，诸如力、压力、变形传感器或麦克风
US15/629,518 US10356531B2 (en) 2016-10-31 2017-06-21 Piezoelectric MEMS sensor, such as force, pressure, deformation sensor or microphone, with improved sensitivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102016000109764A IT201600109764A1 (it) 2016-10-31 2016-10-31 Sensore mems di tipo piezoelettrico, quale sensore di forza, sensore di pressione, sensore di deformazione o microfono, a sensibilita' migliorata

Publications (1)

Publication Number Publication Date
IT201600109764A1 true IT201600109764A1 (it) 2018-05-01

Family

ID=58010296

Family Applications (1)

Application Number Title Priority Date Filing Date
IT102016000109764A IT201600109764A1 (it) 2016-10-31 2016-10-31 Sensore mems di tipo piezoelettrico, quale sensore di forza, sensore di pressione, sensore di deformazione o microfono, a sensibilita' migliorata

Country Status (3)

Country Link
US (1) US10356531B2 (it)
CN (2) CN108017036B (it)
IT (1) IT201600109764A1 (it)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT201600109764A1 (it) * 2016-10-31 2018-05-01 St Microelectronics Srl Sensore mems di tipo piezoelettrico, quale sensore di forza, sensore di pressione, sensore di deformazione o microfono, a sensibilita' migliorata
JP7410935B2 (ja) 2018-05-24 2024-01-10 ザ リサーチ ファウンデーション フォー ザ ステイト ユニバーシティー オブ ニューヨーク 容量性センサ
CN109244232B (zh) * 2018-09-13 2023-07-04 徐景辉 微机电系统压电换能器及制作方法
IT201900002663A1 (it) * 2019-02-25 2020-08-25 St Microelectronics Srl Sensore di pressione includente un trasduttore microelettromeccanico e relativo metodo di rilevazione di pressione
CN110290449A (zh) * 2019-05-09 2019-09-27 安徽奥飞声学科技有限公司 一种音频装置及电子设备
US11553280B2 (en) 2019-06-05 2023-01-10 Skyworks Global Pte. Ltd. Piezoelectric MEMS diaphragm microphone
US11350219B2 (en) 2019-08-13 2022-05-31 Skyworks Solutions, Inc. Piezoelectric MEMS microphone
IT201900019169A1 (it) * 2019-10-17 2021-04-17 St Microelectronics Srl Interruttore impermeabile azionabile da un fluido quale aria e utilizzabile in particolare per l'attivazione di un apparecchio inalatore, quale una sigaretta elettronica
CN112752209B (zh) * 2019-10-31 2022-03-25 华为技术有限公司 一种压电式mems传感器以及相关设备
FR3103966B1 (fr) * 2019-11-28 2021-12-03 Commissariat Energie Atomique Microsystème mécanique et procédé de fabrication associé
IT202000010261A1 (it) 2020-05-07 2021-11-07 St Microelectronics Srl Attuatore piezoelettrico dotato di una struttura deformabile avente migliorate proprieta' meccaniche e relativo procedimento di fabbricazione
IT202000010264A1 (it) * 2020-05-07 2021-11-07 St Microelectronics Srl Attuatore piezoelettrico avente un sensore di deformazione e relativo procedimento di fabbricazione
TWI788671B (zh) * 2020-06-02 2023-01-01 晶極光電科技股份有限公司 多孔壓力感測器的製造方法及其裝置
US12391546B1 (en) 2021-01-07 2025-08-19 Skyworks Global Pte. Ltd. Method of making acoustic devices with directional reinforcement
US11681399B2 (en) * 2021-06-30 2023-06-20 UltraSense Systems, Inc. User-input systems and methods of detecting a user input at a cover member of a user-input system
CN113820064B (zh) * 2021-08-04 2024-09-06 惠州Tcl云创科技有限公司 利用扬声器测量气压的方法、装置、终端设备及存储介质
US12335687B2 (en) 2021-09-20 2025-06-17 Skyworks Solutions, Inc. Piezoelectric MEMS microphone with cantilevered separation
US20230130082A1 (en) 2021-10-21 2023-04-27 Skyworks Solutions, Inc. Method of making a piezoelectric sensor with increased sensitivity and devices having the same
US20230136347A1 (en) 2021-11-01 2023-05-04 Skyworks Solutions, Inc. Method of modifying a resonant frequency in cantilever sensors
CN114166402B (zh) * 2021-12-01 2024-05-31 深圳市锐迪芯电子有限公司 一种mems气流压力传感器及其制备方法
EP4231528A1 (en) * 2022-02-17 2023-08-23 Kohler (China) Investment Co. Ltd. Control device and sanitary equipment
CN217408182U (zh) 2022-02-17 2022-09-13 科勒(中国)投资有限公司 一种控制装置及卫浴设备
FR3143256A1 (fr) * 2022-12-12 2024-06-14 Commissariat à l'Energie Atomique et aux Energies Alternatives Elément actif piézoélectrique pour système électromécanique

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007117198A1 (en) * 2006-04-07 2007-10-18 Niklaus Consulting Microelectromechanical pressure sensor with integrated circuit and method of manufacturing such
WO2009072704A1 (en) * 2007-12-05 2009-06-11 Electronics And Telecommunications Research Institute Micro piezoresistive pressure sensor and manufacturing method thereof
EP2204641A1 (en) * 2008-12-30 2010-07-07 STMicroelectronics Srl Integrated electronic microbalance, in particular integrated chemical sensor for detecting odorous matters

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2669426B1 (fr) * 1990-11-16 1993-10-29 Onera Transducteur de force a poutre vibrante piezoelectrique pour capteur accelerometrique.
US5427975A (en) * 1993-05-10 1995-06-27 Delco Electronics Corporation Method of micromachining an integrated sensor on the surface of a silicon wafer
US5425841A (en) * 1993-06-16 1995-06-20 Kulite Semiconductor Products, Inc. Piezoresistive accelerometer with enhanced performance
US6006607A (en) * 1998-08-31 1999-12-28 Maxim Integrated Products, Inc. Piezoresistive pressure sensor with sculpted diaphragm
US6225140B1 (en) * 1998-10-13 2001-05-01 Institute Of Microelectronics CMOS compatable surface machined pressure sensor and method of fabricating the same
US7307775B2 (en) * 2000-12-07 2007-12-11 Texas Instruments Incorporated Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
JP2007049473A (ja) * 2005-08-10 2007-02-22 Murata Mfg Co Ltd 圧電振動装置
JP5191762B2 (ja) * 2008-03-06 2013-05-08 太陽誘電株式会社 圧電薄膜共振器、フィルタ、および通信装置
CN104602170B (zh) 2008-06-30 2019-08-13 密歇根大学董事会 压电mems麦克风
US8222796B2 (en) * 2008-10-15 2012-07-17 International Business Machines Corporation Micro-electro-mechanical device with a piezoelectric actuator
JP2010118730A (ja) * 2008-11-11 2010-05-27 Toshiba Corp 圧電デバイス及びその製造方法
JP5652775B2 (ja) * 2009-05-29 2015-01-14 トレックス・セミコンダクター株式会社 加速度センサー素子およびこれを有する加速度センサー
WO2011055734A1 (ja) * 2009-11-04 2011-05-12 ローム株式会社 圧力センサおよび圧力センサの製造方法
WO2014031380A1 (en) * 2012-08-21 2014-02-27 Board Of Regents, The University Of Texas System Acoustic sensor
US9805966B2 (en) * 2014-07-25 2017-10-31 Akoustis, Inc. Wafer scale packaging
IT201600109764A1 (it) * 2016-10-31 2018-05-01 St Microelectronics Srl Sensore mems di tipo piezoelettrico, quale sensore di forza, sensore di pressione, sensore di deformazione o microfono, a sensibilita' migliorata

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007117198A1 (en) * 2006-04-07 2007-10-18 Niklaus Consulting Microelectromechanical pressure sensor with integrated circuit and method of manufacturing such
WO2009072704A1 (en) * 2007-12-05 2009-06-11 Electronics And Telecommunications Research Institute Micro piezoresistive pressure sensor and manufacturing method thereof
EP2204641A1 (en) * 2008-12-30 2010-07-07 STMicroelectronics Srl Integrated electronic microbalance, in particular integrated chemical sensor for detecting odorous matters

Also Published As

Publication number Publication date
US10356531B2 (en) 2019-07-16
CN207891041U (zh) 2018-09-21
US20180124521A1 (en) 2018-05-03
CN108017036B (zh) 2023-04-11
CN108017036A (zh) 2018-05-11

Similar Documents

Publication Publication Date Title
IT201600109764A1 (it) Sensore mems di tipo piezoelettrico, quale sensore di forza, sensore di pressione, sensore di deformazione o microfono, a sensibilita' migliorata
ITUA20162174A1 (it) Procedimento di fabbricazione di un sensore di pressione mems e relativo sensore di pressione mems
HUE048347T4 (hu) Erõ- és/vagy nyomásszenzor
DK3702322T3 (da) Mikroelektromekanisk transducer
EP3676025A4 (en) PIEZOELECTRIC MICRO-MACHINED ULTRASONIC CONVERTER WITH A PATTERNED MEMBRANE STRUCTURE
EP3472829A4 (en) PIEZOELECTRIC MICROWORKED ULTRASONIC TRANSDUCERS WITH VOLTAGE RELEASE CHARACTERISTICS
EP3332227A4 (en) MEMS FLOW SENSOR
EP3248936A4 (en) Mems pressure sensor and mems inertial sensor integration structure
IT201700091680A1 (it) Nucleo sensore micromeccanico per sensore inerziale
DK4050312T3 (da) Piezoelektrisk MEMS-akustisk sensor
ITUA20161498A1 (it) Struttura di rilevamento micromeccanica di un dispositivo sensore mems, in particolare di un giroscopio mems, con migliorate caratteristiche di azionamento
ITUB20161080A1 (it) Dispositivo sensore di pressione di tipo micro-elettro-meccanico con ridotta sensibilita' alla temperatura
IT201700035969A1 (it) Dispositivo mems includente un sensore di pressione di tipo capacitivo e relativo processo di fabbricazione
EP3421957A4 (en) PRESSURE SENSOR
EP3541278A4 (en) PRESSURE SENSOR
EP4045885A4 (en) DIRECTIONAL DIFFERENTIAL PRESSURE DETECTOR
EP3511673A4 (en) PIEZOELECTRIC SENSOR
EP4261515A4 (en) PRESSURE SENSOR
EP3328096A4 (en) CAPACITIVE CONVERTER AND ACOUSTIC SENSOR
EP3864388C0 (en) PIEZOELECTRIC SENSOR
EP4036543C0 (de) Drucksensor
EP3328095A4 (en) CAPACITIVE CONVERTER AND ACOUSTIC SENSOR
ITUA20162833A1 (it) Dispositivo sensore, particolarmente un sensore di pressione
EP3418706A4 (en) PRESSURE SENSOR
EP3919883A4 (en) FORCE SENSOR