IT7830437A0 - Sensore ottico-elettronico funzionante secondo il metodo dell'iniezione di cariche. - Google Patents
Sensore ottico-elettronico funzionante secondo il metodo dell'iniezione di cariche.Info
- Publication number
- IT7830437A0 IT7830437A0 IT7830437A IT3043778A IT7830437A0 IT 7830437 A0 IT7830437 A0 IT 7830437A0 IT 7830437 A IT7830437 A IT 7830437A IT 3043778 A IT3043778 A IT 3043778A IT 7830437 A0 IT7830437 A0 IT 7830437A0
- Authority
- IT
- Italy
- Prior art keywords
- optical
- charge injection
- injection method
- electronic sensor
- functioning according
- Prior art date
Links
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/154—Charge-injection device [CID] image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772754549 DE2754549A1 (de) | 1977-12-07 | 1977-12-07 | Optoelektronischer sensor nach dem prinzip der ladungsinjektion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7830437A0 true IT7830437A0 (it) | 1978-12-01 |
| IT1100522B IT1100522B (it) | 1985-09-28 |
Family
ID=6025530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT30437/78A IT1100522B (it) | 1977-12-07 | 1978-12-01 | Sensore ottico-elettronico funzionante secondo il metodo dell'iniezione di cariche |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4266235A (it) |
| EP (1) | EP0003213B1 (it) |
| JP (1) | JPS5489492A (it) |
| CA (1) | CA1126843A (it) |
| DE (2) | DE2754549A1 (it) |
| IT (1) | IT1100522B (it) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4327291A (en) * | 1980-06-16 | 1982-04-27 | Texas Instruments Incorporated | Infrared charge injection device imaging system |
| US4568960A (en) * | 1980-10-23 | 1986-02-04 | Rockwell International Corporation | Blocked impurity band detectors |
| FR2533371B1 (fr) * | 1982-09-21 | 1985-12-13 | Thomson Csf | Structure de grille pour circuit integre comportant des elements du type grille-isolant-semi-conducteur et procede de realisation d'un circuit integre utilisant une telle structure |
| US7868388B2 (en) * | 2007-01-31 | 2011-01-11 | Sandisk 3D Llc | Embedded memory in a CMOS circuit and methods of forming the same |
| US7888200B2 (en) * | 2007-01-31 | 2011-02-15 | Sandisk 3D Llc | Embedded memory in a CMOS circuit and methods of forming the same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3995302A (en) * | 1973-05-07 | 1976-11-30 | Fairchild Camera And Instrument Corporation | Transfer gate-less photosensor configuration |
| US4001861A (en) * | 1973-10-12 | 1977-01-04 | The United States Of America As Represented By The Secretary Of The Navy | Double-layer, polysilicon, two-phase, charge coupled device |
| US3988613A (en) * | 1975-05-02 | 1976-10-26 | General Electric Company | Radiation sensing and charge storage devices |
| US4024562A (en) * | 1975-05-02 | 1977-05-17 | General Electric Company | Radiation sensing and charge storage devices |
| US3950188A (en) * | 1975-05-12 | 1976-04-13 | Trw Inc. | Method of patterning polysilicon |
| DE2554638A1 (de) * | 1975-12-04 | 1977-06-16 | Siemens Ag | Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante |
| DE2723933A1 (de) * | 1975-12-04 | 1978-06-01 | Siemens Ag | Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante |
| DE2703877C2 (de) * | 1977-01-31 | 1982-06-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung |
| US4134031A (en) * | 1977-09-19 | 1979-01-09 | Rca Corporation | Charge injection devices and arrays and systems including such devices |
-
1977
- 1977-12-07 DE DE19772754549 patent/DE2754549A1/de not_active Withdrawn
-
1978
- 1978-11-20 DE DE7878101415T patent/DE2862343D1/de not_active Expired
- 1978-11-20 EP EP78101415A patent/EP0003213B1/de not_active Expired
- 1978-11-22 US US05/962,893 patent/US4266235A/en not_active Expired - Lifetime
- 1978-12-01 IT IT30437/78A patent/IT1100522B/it active
- 1978-12-07 JP JP15187478A patent/JPS5489492A/ja active Granted
- 1978-12-07 CA CA317,556A patent/CA1126843A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2754549A1 (de) | 1979-06-13 |
| EP0003213A3 (en) | 1979-09-05 |
| EP0003213A2 (de) | 1979-08-08 |
| JPS5489492A (en) | 1979-07-16 |
| EP0003213B1 (de) | 1983-10-26 |
| US4266235A (en) | 1981-05-05 |
| IT1100522B (it) | 1985-09-28 |
| JPS6226187B2 (it) | 1987-06-08 |
| CA1126843A (en) | 1982-06-29 |
| DE2862343D1 (en) | 1983-12-01 |
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