IT7920573A0 - Circuiti di pilotaggio in bootstrapper evitare il funzionamento ad elettroni caldi. - Google Patents

Circuiti di pilotaggio in bootstrapper evitare il funzionamento ad elettroni caldi.

Info

Publication number
IT7920573A0
IT7920573A0 IT7920573A IT2057379A IT7920573A0 IT 7920573 A0 IT7920573 A0 IT 7920573A0 IT 7920573 A IT7920573 A IT 7920573A IT 2057379 A IT2057379 A IT 2057379A IT 7920573 A0 IT7920573 A0 IT 7920573A0
Authority
IT
Italy
Prior art keywords
bootstrapper
drive circuits
hot electrons
avoid operation
avoid
Prior art date
Application number
IT7920573A
Other languages
English (en)
Other versions
IT1166670B (it
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7920573A0 publication Critical patent/IT7920573A0/it
Application granted granted Critical
Publication of IT1166670B publication Critical patent/IT1166670B/it

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/02Shaping pulses by amplifying
    • H03K5/023Shaping pulses by amplifying using field effect transistors
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04Generating or distributing clock signals or signals derived directly therefrom
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00315Modifications for increasing the reliability for protection in field-effect transistor circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01Modifications for accelerating switching
    • H03K19/017Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT20573/79A 1978-03-03 1979-02-27 Circuiti di pilotaggio in bootstrap per evitare il funzionamento ad elettroni caldi IT1166670B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/883,429 US4199695A (en) 1978-03-03 1978-03-03 Avoidance of hot electron operation of voltage stressed bootstrap drivers

Publications (2)

Publication Number Publication Date
IT7920573A0 true IT7920573A0 (it) 1979-02-27
IT1166670B IT1166670B (it) 1987-05-06

Family

ID=25382563

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20573/79A IT1166670B (it) 1978-03-03 1979-02-27 Circuiti di pilotaggio in bootstrap per evitare il funzionamento ad elettroni caldi

Country Status (5)

Country Link
US (1) US4199695A (it)
EP (1) EP0003963B1 (it)
JP (1) JPS54118783A (it)
DE (1) DE2961384D1 (it)
IT (1) IT1166670B (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687933A (en) * 1979-12-19 1981-07-17 Fujitsu Ltd Bootstrap circuit
US4429237A (en) 1981-03-20 1984-01-31 International Business Machines Corp. High voltage on chip FET driver
US4508978A (en) * 1982-09-16 1985-04-02 Texas Instruments Incorporated Reduction of gate oxide breakdown for booted nodes in MOS integrated circuits
US4714840A (en) * 1982-12-30 1987-12-22 Thomson Components - Mostek Corporation MOS transistor circuits having matched channel width and length dimensions
US4642491A (en) * 1983-06-24 1987-02-10 International Business Machines Corporation Single transistor driver circuit
US4642492A (en) * 1984-10-25 1987-02-10 Digital Equipment Corporation Multiple phase clock buffer module with non-saturated pull-up transistor to avoid hot electron effects
NL8800234A (nl) * 1988-02-01 1989-09-01 Philips Nv Geintegreerde schakeling met logische circuits en ten minste een push-pull-trap.
BE1007477A3 (nl) * 1993-09-06 1995-07-11 Philips Electronics Nv Oscillator.
US6104229A (en) 1996-05-02 2000-08-15 Integrated Device Technology, Inc. High voltage tolerable input buffer and method for operating same
FR2760151B1 (fr) * 1997-02-25 1999-05-14 Sgs Thomson Microelectronics Amplificateur-tampon de commande de bus
US5963076A (en) * 1997-04-14 1999-10-05 Motorola, Inc. Circuit with hot-electron protection and method
US5966038A (en) * 1997-12-15 1999-10-12 Motorola, Inc. Circuit with overvoltage protection
US20070063758A1 (en) * 2005-09-22 2007-03-22 Honeywell International Inc. Voltage divider and method for minimizing higher than rated voltages
CN113570998B (zh) 2021-07-30 2022-05-10 惠科股份有限公司 显示面板的控制电路和显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3746946A (en) * 1972-10-02 1973-07-17 Motorola Inc Insulated gate field-effect transistor input protection circuit
US3986054A (en) * 1973-10-11 1976-10-12 International Business Machines Corporation High voltage integrated driver circuit
US3927334A (en) * 1974-04-11 1975-12-16 Electronic Arrays MOSFET bistrap buffer
DE2443428C3 (de) * 1974-09-11 1978-06-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Dynamischer MOS-Verstärker
US4061933A (en) * 1975-12-29 1977-12-06 Mostek Corporation Clock generator and delay stage
US4096398A (en) * 1977-02-23 1978-06-20 National Semiconductor Corporation MOS output buffer circuit with feedback

Also Published As

Publication number Publication date
JPS54118783A (en) 1979-09-14
IT1166670B (it) 1987-05-06
EP0003963A1 (en) 1979-09-19
DE2961384D1 (en) 1982-01-28
US4199695A (en) 1980-04-22
EP0003963B1 (en) 1981-11-25

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