IT7922732A0 - Perfezionamento nella deposizione di pellicole di metallo. - Google Patents

Perfezionamento nella deposizione di pellicole di metallo.

Info

Publication number
IT7922732A0
IT7922732A0 IT7922732A IT2273279A IT7922732A0 IT 7922732 A0 IT7922732 A0 IT 7922732A0 IT 7922732 A IT7922732 A IT 7922732A IT 2273279 A IT2273279 A IT 2273279A IT 7922732 A0 IT7922732 A0 IT 7922732A0
Authority
IT
Italy
Prior art keywords
deposition
improvement
metal films
films
metal
Prior art date
Application number
IT7922732A
Other languages
English (en)
Other versions
IT1192727B (it
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of IT7922732A0 publication Critical patent/IT7922732A0/it
Application granted granted Critical
Publication of IT1192727B publication Critical patent/IT1192727B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
IT22732/79A 1978-05-25 1979-05-17 Perfezionamento nella deposizione di pellicole di metallo IT1192727B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB22633/78A GB1594399A (en) 1978-05-25 1978-05-25 Metal deposition

Publications (2)

Publication Number Publication Date
IT7922732A0 true IT7922732A0 (it) 1979-05-17
IT1192727B IT1192727B (it) 1988-05-04

Family

ID=10182595

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22732/79A IT1192727B (it) 1978-05-25 1979-05-17 Perfezionamento nella deposizione di pellicole di metallo

Country Status (4)

Country Link
JP (1) JPS54163793A (it)
FR (1) FR2426743A1 (it)
GB (1) GB1594399A (it)
IT (1) IT1192727B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5985857A (ja) * 1982-11-08 1984-05-17 Semiconductor Energy Lab Co Ltd アルミニユ−ム被膜の作製方法
DE3666230D1 (en) * 1985-05-03 1989-11-16 American Telephone & Telegraph Method of making a device comprising a patterned aluminum layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2921868A (en) * 1956-06-07 1960-01-19 Union Carbide Corp Aluminum gas plating of various substrates
FR1210117A (fr) * 1958-09-02 1960-03-07 Ohio Commw Eng Co Dépôt d'aluminium à partir d'un composé gazeux, en particulier du triisobutyle d'aluminium
FR1405106A (fr) * 1964-08-26 1965-07-02 Union Carbide Corp Procédé pour déposer des revêtements métallliques dans des trous, des tubes, des fentes, des fissures et autres cavités analogues

Also Published As

Publication number Publication date
FR2426743A1 (fr) 1979-12-21
JPS54163793A (en) 1979-12-26
FR2426743B1 (it) 1983-08-26
IT1192727B (it) 1988-05-04
GB1594399A (en) 1981-07-30
JPS641550B2 (it) 1989-01-11

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