IT7927738A0 - Dispositivo a barriera di schottkyperfezionato. - Google Patents

Dispositivo a barriera di schottkyperfezionato.

Info

Publication number: IT7927738A0
Authority: IT; Italy
Prior art keywords: schottky barrier; barrier device; improved schottky; improved; schottky
Prior art date: 1978-12-11

Application number

IT7927738A

Other languages

English (en)

Other versions

IT1165391B (it

Inventor

Richard Ford Dreves

John Frank Fresia

Sang Uk Kim

John James Lajza Jr

Original Assignee

Ibm

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-12-11

Filing date

1979-11-30

Publication date

1979-11-30

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25513652&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT7927738(A0) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

1979-11-30 Application filed by Ibm filed Critical Ibm

1979-11-30 Publication of IT7927738A0 publication Critical patent/IT7927738A0/it

1987-04-22 Application granted granted Critical

1987-04-22 Publication of IT1165391B publication Critical patent/IT1165391B/it

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/061—Manufacture or treatment of FETs having Schottky gates
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials

IT27738/79A 1978-12-11 1979-11-30 Dispositivo a barriera di schottky perfezionato IT1165391B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/968,052 US4261095A (en)	1978-12-11	1978-12-11	Self aligned schottky guard ring

Publications (2)

Publication Number	Publication Date
IT7927738A0 true IT7927738A0 (it)	1979-11-30
IT1165391B IT1165391B (it)	1987-04-22

Family

ID=25513652

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT27738/79A IT1165391B (it)	1978-12-11	1979-11-30	Dispositivo a barriera di schottky perfezionato

Country Status (5)

Country	Link
US (1)	US4261095A (it)
EP (1)	EP0012220A1 (it)
JP (1)	JPS5950233B2 (it)
CA (1)	CA1123121A (it)
IT (1)	IT1165391B (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2496982A1 (fr)	1980-12-24	1982-06-25	Labo Electronique Physique	Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus
US4414737A (en) *	1981-01-30	1983-11-15	Tokyo Shibaura Denki Kabushiki Kaisha	Production of Schottky barrier diode
DE3124572A1 (de) *	1981-06-23	1982-12-30	Siemens AG, 1000 Berlin und 8000 München	Verfahren zur herstellung von schottky-dioden
US4441931A (en) *	1981-10-28	1984-04-10	Bell Telephone Laboratories, Incorporated	Method of making self-aligned guard regions for semiconductor device elements
US4545114A (en) *	1982-09-30	1985-10-08	Fujitsu Limited	Method of producing semiconductor device
US4533933A (en) *	1982-12-07	1985-08-06	The United States Of America As Represented By The Secretary Of The Air Force	Schottky barrier infrared detector and process
US4531055A (en) *	1983-01-05	1985-07-23	The United States Of America As Represented By The Secretary Of The Air Force	Self-guarding Schottky barrier infrared detector array
US4638345A (en) *	1983-06-01	1987-01-20	Rca Corporation	IR imaging array and method of making same
DE3576766D1 (de) *	1984-10-26	1990-04-26	Siemens Ag	Schottky-kontakt auf einer halbleiteroberflaeche und verfahren zu dessen herstellung.
US4667395A (en) *	1985-03-29	1987-05-26	International Business Machines Corporation	Method for passivating an undercut in semiconductor device preparation
US4669178A (en) *	1986-05-23	1987-06-02	International Business Machines Corporation	Process for forming a self-aligned low resistance path in semiconductor devices
US5192993A (en) *	1988-09-27	1993-03-09	Kabushiki Kaisha Toshiba	Semiconductor device having improved element isolation area
JP3023853B2 (ja) *	1990-08-23	2000-03-21	富士通株式会社	半導体装置の製造方法
US5270256A (en) *	1991-11-27	1993-12-14	Intel Corporation	Method of forming a guard wall to reduce delamination effects
US5859450A (en) *	1997-09-30	1999-01-12	Intel Corporation	Dark current reducing guard ring
WO1999062112A1 (de) *	1998-05-26	1999-12-02	Infineon Technologies Ag	Verfahren zur herstellung von schottky-dioden
US6121122A (en) *	1999-05-17	2000-09-19	International Business Machines Corporation	Method of contacting a silicide-based schottky diode
US6699775B2 (en) *	2000-02-22	2004-03-02	International Rectifier Corporation	Manufacturing process for fast recovery diode
DE10330838B4 (de)	2003-07-08	2005-08-25	Infineon Technologies Ag	Elektronisches Bauelement mit Schutzring
US20050275057A1 (en) *	2004-06-15	2005-12-15	Breen Marc L	Schottky diode with dielectric isolation
US20060076639A1 (en) *	2004-10-13	2006-04-13	Lypen William J	Schottky diodes and methods of making the same
CN115312387B (zh) *	2022-08-24	2026-02-06	中国电子科技集团公司第十三研究所	一种高频肖特基二极管及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1265017A (it) *	1968-08-19	1972-03-01
JPS4826188B1 (it) *	1968-10-04	1973-08-07
US3616380A (en) *	1968-11-22	1971-10-26	Bell Telephone Labor Inc	Barrier layer devices and methods for their manufacture
US3742315A (en) *	1971-10-18	1973-06-26	Matsushita Electronics Corp	Schottky barrier type semiconductor device with improved backward breakdown voltage characteristic
US4026740A (en) *	1975-10-29	1977-05-31	Intel Corporation	Process for fabricating narrow polycrystalline silicon members
US4063964A (en) *	1976-12-27	1977-12-20	International Business Machines Corporation	Method for forming a self-aligned schottky barrier device guardring

1978
- 1978-12-11 US US05/968,052 patent/US4261095A/en not_active Expired - Lifetime
1979
- 1979-10-03 JP JP54126929A patent/JPS5950233B2/ja not_active Expired
- 1979-10-12 CA CA337,524A patent/CA1123121A/en not_active Expired
- 1979-11-08 EP EP79104373A patent/EP0012220A1/de not_active Ceased
- 1979-11-30 IT IT27738/79A patent/IT1165391B/it active

Also Published As

Publication number	Publication date
JPS5580367A (en)	1980-06-17
JPS5950233B2 (ja)	1984-12-07
EP0012220A1 (de)	1980-06-25
US4261095A (en)	1981-04-14
CA1123121A (en)	1982-05-04
IT1165391B (it)	1987-04-22

Publication	Publication Date	Title
ES482150A0 (es)	1980-09-01	Un dispositivo fotovoltaico.
IT7822020A0 (it)	1978-04-06	Dispositivo di chiusura a catenaccio.
IT1207224B (it)	1989-05-17	Dispositivo di esposizione a mensola.
NL7802858A (nl)	1979-09-18	Roentgenfluorescopie-inrichting.
ES244054Y (es)	1980-07-01	Un dispositivo de rueda libre.
NL7902190A (nl)	1979-10-05	Voorwerpstapelinrichting.
IT1115690B (it)	1986-02-03	Dispositivo perfezionato a barriera di schottky
IT7919260A0 (it)	1979-01-12	Dispositivo semiconduttore a metallo-isolante.
IT1165391B (it)	1987-04-22	Dispositivo a barriera di schottky perfezionato
IT7924046A0 (it)	1979-07-02	Sbarramento perfezionato. dispositivo fotovoltaico comprendente un elettrodo di
IT7919612A0 (it)	1979-01-25	Barriera anti-intrusi.
IT7827442A0 (it)	1978-09-07	Dispositivo a spazzola.
JPS5543893A (en)	1980-03-27	Schottky barrier diode
ES251722Y (es)	1981-03-16	Un dispositivo de afeitar perfeccionado .
IT8020125A0 (it)	1980-02-22	Dispositivo a semicondutture.
IT7819890A0 (it)	1978-02-01	Dispositivo di memoria a semiconduttore.
IT8219677A0 (it)	1982-02-16	Dispositivo a semiconduttori.
IT7821196A0 (it)	1978-03-13	Dispositivo di giunzione.
NL186416C (nl)	1990-11-16	Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting.
NO792717L (no)	1980-02-25	Utvelgelsesanordning.
IT7831348A0 (it)	1978-12-28	Dispositivo di sorveglianza per valvole a semiconduttori.
NL7804172A (nl)	1979-10-23	Heiinrichting.
NO790528L (no)	1979-08-20	Kantningsanordning.
NL7902242A (nl)	1979-09-25	Stempelinrichting.
IT7923500A0 (it)	1979-06-12	Dispositivo di tenuta.