IT8024530A0 - Cella statica di memoria e memoria realizzata con l'impiego di tali celle. - Google Patents

Cella statica di memoria e memoria realizzata con l'impiego di tali celle.

Info

Publication number
IT8024530A0
IT8024530A0 IT8024530A IT2453080A IT8024530A0 IT 8024530 A0 IT8024530 A0 IT 8024530A0 IT 8024530 A IT8024530 A IT 8024530A IT 2453080 A IT2453080 A IT 2453080A IT 8024530 A0 IT8024530 A0 IT 8024530A0
Authority
IT
Italy
Prior art keywords
cells
created
memory
memory cell
static
Prior art date
Application number
IT8024530A
Other languages
English (en)
Other versions
IT1132700B (it
Inventor
Jan Lohstroh
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT8024530A0 publication Critical patent/IT8024530A0/it
Application granted granted Critical
Publication of IT1132700B publication Critical patent/IT1132700B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
IT24530/80A 1979-09-11 1980-09-08 Cella statica di memoria e memoria realizzazione con l'impiego di tali celle IT1132700B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7906752,A NL186934C (nl) 1979-09-11 1979-09-11 Statische bipolaire geheugencel.

Publications (2)

Publication Number Publication Date
IT8024530A0 true IT8024530A0 (it) 1980-09-08
IT1132700B IT1132700B (it) 1986-07-02

Family

ID=19833819

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24530/80A IT1132700B (it) 1979-09-11 1980-09-08 Cella statica di memoria e memoria realizzazione con l'impiego di tali celle

Country Status (10)

Country Link
US (1) US4388636A (it)
JP (1) JPS5826182B2 (it)
AU (1) AU538551B2 (it)
CA (1) CA1143477A (it)
DE (1) DE3033731C2 (it)
FR (1) FR2465294A1 (it)
GB (1) GB2058453B (it)
IT (1) IT1132700B (it)
NL (1) NL186934C (it)
SE (1) SE449937B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL186934C (nl) 1979-09-11 1991-04-02 Philips Nv Statische bipolaire geheugencel.
DE3380004D1 (en) * 1982-03-30 1989-07-06 Fujitsu Ltd Semiconductor memory device
JPS59141600U (ja) * 1983-03-14 1984-09-21 日立造船富岡機械株式会社 抄紙機の紙の水分調節装置
US4956688A (en) * 1984-10-29 1990-09-11 Hitachi, Ltd. Radiation resistant bipolar memory
JPS6259977U (it) * 1985-10-03 1987-04-14
US5177584A (en) * 1988-04-11 1993-01-05 Hitachi, Ltd. Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032902A (en) * 1975-10-30 1977-06-28 Fairchild Camera And Instrument Corporation An improved semiconductor memory cell circuit and structure
FR2413782A1 (fr) * 1977-12-30 1979-07-27 Radiotechnique Compelec Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde
JPS6057707B2 (ja) * 1978-01-25 1985-12-16 株式会社日立製作所 記憶回路
US4257059A (en) * 1978-12-20 1981-03-17 Fairchild Camera And Instrument Corp. Inverse transistor coupled memory cell
NL186934C (nl) 1979-09-11 1991-04-02 Philips Nv Statische bipolaire geheugencel.

Also Published As

Publication number Publication date
NL186934B (nl) 1990-11-01
SE449937B (sv) 1987-05-25
FR2465294B1 (it) 1985-02-15
SE8006225L (sv) 1981-03-12
DE3033731C2 (de) 1985-05-30
DE3033731A1 (de) 1981-03-26
GB2058453B (en) 1983-07-06
NL186934C (nl) 1991-04-02
AU538551B2 (en) 1984-08-16
JPS5826182B2 (ja) 1983-06-01
IT1132700B (it) 1986-07-02
FR2465294A1 (fr) 1981-03-20
GB2058453A (en) 1981-04-08
AU6211880A (en) 1981-03-19
JPS5647991A (en) 1981-04-30
NL7906752A (nl) 1981-03-13
US4388636A (en) 1983-06-14
CA1143477A (en) 1983-03-22

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