IT8026721A0 - Metodo per fabbricare un transistor con un profilo ideale delle impurita della base. - Google Patents
Metodo per fabbricare un transistor con un profilo ideale delle impurita della base.Info
- Publication number
- IT8026721A0 IT8026721A0 IT8026721A IT2672180A IT8026721A0 IT 8026721 A0 IT8026721 A0 IT 8026721A0 IT 8026721 A IT8026721 A IT 8026721A IT 2672180 A IT2672180 A IT 2672180A IT 8026721 A0 IT8026721 A0 IT 8026721A0
- Authority
- IT
- Italy
- Prior art keywords
- transistor
- manufacturing
- impurity profile
- base impurity
- ideal base
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US1979/001137 WO1981001911A1 (en) | 1979-12-28 | 1979-12-28 | Method for achieving ideal impurity base profile in a transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8026721A0 true IT8026721A0 (it) | 1980-12-18 |
| IT1150096B IT1150096B (it) | 1986-12-10 |
Family
ID=22147840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT26721/80A IT1150096B (it) | 1979-12-28 | 1980-12-18 | Metodo per fabbricare un transistor con un profilo ideale delle impurita della base |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0042380B1 (it) |
| JP (1) | JPS6410951B2 (it) |
| CA (1) | CA1160363A (it) |
| DE (1) | DE2967588D1 (it) |
| IT (1) | IT1150096B (it) |
| WO (1) | WO1981001911A1 (it) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4536950A (en) * | 1983-02-10 | 1985-08-27 | Matsushita Electric Industrial Co., Ltd. | Method for making semiconductor device |
| US4912053A (en) * | 1988-02-01 | 1990-03-27 | Harris Corporation | Ion implanted JFET with self-aligned source and drain |
| US5204276A (en) * | 1988-12-06 | 1993-04-20 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| JPH02153534A (ja) * | 1988-12-06 | 1990-06-13 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3083441A (en) * | 1959-04-13 | 1963-04-02 | Texas Instruments Inc | Method for fabricating transistors |
| US3389023A (en) * | 1966-01-14 | 1968-06-18 | Ibm | Methods of making a narrow emitter transistor by masking and diffusion |
| US3432920A (en) * | 1966-12-01 | 1969-03-18 | Rca Corp | Semiconductor devices and methods of making them |
| US3489622A (en) * | 1967-05-18 | 1970-01-13 | Ibm | Method of making high frequency transistors |
| FR1569872A (it) * | 1968-04-10 | 1969-06-06 | ||
| US3717507A (en) * | 1969-06-19 | 1973-02-20 | Shibaura Electric Co Ltd | Method of manufacturing semiconductor devices utilizing ion-implantation and arsenic diffusion |
| US3886569A (en) * | 1970-01-22 | 1975-05-27 | Ibm | Simultaneous double diffusion into a semiconductor substrate |
| NL7116688A (it) * | 1970-12-09 | 1972-06-13 | ||
| US3753807A (en) * | 1972-02-24 | 1973-08-21 | Bell Canada Northern Electric | Manufacture of bipolar semiconductor devices |
| US3856578A (en) * | 1972-03-13 | 1974-12-24 | Bell Telephone Labor Inc | Bipolar transistors and method of manufacture |
| US3940288A (en) * | 1973-05-16 | 1976-02-24 | Fujitsu Limited | Method of making a semiconductor device |
| US3880676A (en) * | 1973-10-29 | 1975-04-29 | Rca Corp | Method of making a semiconductor device |
| US4066473A (en) * | 1976-07-15 | 1978-01-03 | Fairchild Camera And Instrument Corporation | Method of fabricating high-gain transistors |
| US4115797A (en) * | 1976-10-04 | 1978-09-19 | Fairchild Camera And Instrument Corporation | Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector |
| US4157269A (en) * | 1978-06-06 | 1979-06-05 | International Business Machines Corporation | Utilizing polysilicon diffusion sources and special masking techniques |
| US4168999A (en) * | 1978-12-26 | 1979-09-25 | Fairchild Camera And Instrument Corporation | Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques |
-
1979
- 1979-12-28 EP EP80901014A patent/EP0042380B1/en not_active Expired
- 1979-12-28 WO PCT/US1979/001137 patent/WO1981001911A1/en not_active Ceased
- 1979-12-28 JP JP55501220A patent/JPS6410951B2/ja not_active Expired
- 1979-12-28 DE DE8080901014T patent/DE2967588D1/de not_active Expired
-
1980
- 1980-12-17 CA CA000367000A patent/CA1160363A/en not_active Expired
- 1980-12-18 IT IT26721/80A patent/IT1150096B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| IT1150096B (it) | 1986-12-10 |
| EP0042380A4 (en) | 1983-04-18 |
| JPS6410951B2 (it) | 1989-02-22 |
| DE2967588D1 (en) | 1986-04-24 |
| EP0042380B1 (en) | 1986-03-19 |
| CA1160363A (en) | 1984-01-10 |
| EP0042380A1 (en) | 1981-12-30 |
| WO1981001911A1 (en) | 1981-07-09 |
| JPS56501585A (it) | 1981-10-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0036867A4 (en) | Double cavity semiconductor chip carrier. | |
| BE849751A (fr) | Procede de fabrication d'un document | |
| BE848345A (fr) | Procede de fabrication d'un dispositif a semi-conducteurs, | |
| IT8125693A0 (it) | Metodo di fabbricazione di un dispositivo semiconduttore. | |
| BE853547A (fr) | Procede de fabrication de transistors a effet de champ | |
| IT7823833A0 (it) | Processo di fabbricazione di dispositivi semiconduttori. | |
| GB2054265B (en) | Manufacturing emitters by diffusion from polysilicon | |
| FR2353362A1 (fr) | Procede de fabrication de pistons avec canal annulaire | |
| NL7612883A (nl) | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. | |
| IT8121369A0 (it) | Metodo di fabbricazione di un dispositivo semiconduttore. | |
| GB2010580B (en) | Method for manufacturing a semiconductor device | |
| IT1024956B (it) | Procedimento per la fabbricazione di un dispositivo semiconduttone | |
| IT1129686B (it) | Metodo di fabbricazione di acciaio | |
| IT7826098A0 (it) | Processo per la fabbricazione di dispositivi semiconduttori. | |
| FR2307437A1 (fr) | Procede de fabrication de cadres-supports de conducteurs metalliques | |
| DK134394B (da) | Fremgangsmåde til fremstilling af et kontaktlegeme. | |
| IT8121861A0 (it) | Profilatrice e procedimento per la fabbricazione di un profilo. | |
| IT7831287A0 (it) | Metodo e disposizione per la fabbricazione di confezioni. | |
| IT8020125A0 (it) | Dispositivo a semicondutture. | |
| IT1150096B (it) | Metodo per fabbricare un transistor con un profilo ideale delle impurita della base | |
| BE854834A (fr) | Procede de fabrication de rails a caracteristiques ameliorees | |
| IT8221430A0 (it) | Procedimento per la fabbricazione di un dispositivo a semiconduttori. | |
| IT1089299B (it) | Procedimento per fabbricare un dispositivo semiconduttore | |
| PL209131A1 (pl) | Sposob wytwarzania zwiazkow trojpierscieniowych z atomem azotu w pozycji wezlowej | |
| IT8023183A0 (it) | Dispositivo di illuminazione delle tastiere. |