IT8148581A0 - Procedimento per la ossidazione di substrati di arseniuro di gallio - Google Patents

Procedimento per la ossidazione di substrati di arseniuro di gallio

Info

Publication number
IT8148581A0
IT8148581A0 IT8148581A IT4858181A IT8148581A0 IT 8148581 A0 IT8148581 A0 IT 8148581A0 IT 8148581 A IT8148581 A IT 8148581A IT 4858181 A IT4858181 A IT 4858181A IT 8148581 A0 IT8148581 A0 IT 8148581A0
Authority
IT
Italy
Prior art keywords
arseniide
gallium
substrates
oxidation
procedure
Prior art date
Application number
IT8148581A
Other languages
English (en)
Other versions
IT1142530B (it
Inventor
Antonio Cetronio
Original Assignee
Selenia Ind Elettroniche
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Selenia Ind Elettroniche filed Critical Selenia Ind Elettroniche
Priority to IT48581/81A priority Critical patent/IT1142530B/it
Publication of IT8148581A0 publication Critical patent/IT8148581A0/it
Priority to EP82830121A priority patent/EP0069707B1/en
Priority to DE8282830121T priority patent/DE3273293D1/de
Priority to US06/383,179 priority patent/US4433006A/en
Application granted granted Critical
Publication of IT1142530B publication Critical patent/IT1142530B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6304Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0054Plasma-treatment, e.g. with gas-discharge plasma
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6319Formation by plasma treatments, e.g. plasma oxidation of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
IT48581/81A 1981-05-29 1981-05-29 Procedimento per la ossidazione di substrati di arseniuro di gallio IT1142530B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT48581/81A IT1142530B (it) 1981-05-29 1981-05-29 Procedimento per la ossidazione di substrati di arseniuro di gallio
EP82830121A EP0069707B1 (en) 1981-05-29 1982-05-07 Method of oxidising semiconductor substrates
DE8282830121T DE3273293D1 (en) 1981-05-29 1982-05-07 Method of oxidising semiconductor substrates
US06/383,179 US4433006A (en) 1981-05-29 1982-05-28 Process for oxidizing semiconducting compounds, especially gallium arsenide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT48581/81A IT1142530B (it) 1981-05-29 1981-05-29 Procedimento per la ossidazione di substrati di arseniuro di gallio

Publications (2)

Publication Number Publication Date
IT8148581A0 true IT8148581A0 (it) 1981-05-29
IT1142530B IT1142530B (it) 1986-10-08

Family

ID=11267449

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48581/81A IT1142530B (it) 1981-05-29 1981-05-29 Procedimento per la ossidazione di substrati di arseniuro di gallio

Country Status (4)

Country Link
US (1) US4433006A (it)
EP (1) EP0069707B1 (it)
DE (1) DE3273293D1 (it)
IT (1) IT1142530B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8815782D0 (en) * 1988-07-02 1988-08-10 Univ Liverpool Apparatus & method relating to plasma oxidiser
KR0155566B1 (ko) * 1990-07-20 1998-11-16 이노우에 아끼라 플라즈마 처리장치
US5707692A (en) * 1990-10-23 1998-01-13 Canon Kabushiki Kaisha Apparatus and method for processing a base substance using plasma and a magnetic field
US5958519A (en) * 1997-09-15 1999-09-28 National Science Council Method for forming oxide film on III-V substrate
AU2005249060A1 (en) * 2004-06-01 2005-12-15 Centrition Ltd. Personal nutrition control devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4374867A (en) * 1981-11-06 1983-02-22 Bell Telephone Laboratories, Incorporated Method of growing oxide layer on indium gallium arsenide

Also Published As

Publication number Publication date
EP0069707A1 (en) 1983-01-12
DE3273293D1 (en) 1986-10-23
EP0069707B1 (en) 1986-09-17
IT1142530B (it) 1986-10-08
US4433006A (en) 1984-02-21

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