IT8319236A0 - Dispositivo a circuito integrato a semiconduttori. - Google Patents
Dispositivo a circuito integrato a semiconduttori.Info
- Publication number
- IT8319236A0 IT8319236A0 IT8319236A IT1923683A IT8319236A0 IT 8319236 A0 IT8319236 A0 IT 8319236A0 IT 8319236 A IT8319236 A IT 8319236A IT 1923683 A IT1923683 A IT 1923683A IT 8319236 A0 IT8319236 A0 IT 8319236A0
- Authority
- IT
- Italy
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- semiconductor
- integrated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57008932A JPS58127363A (ja) | 1982-01-25 | 1982-01-25 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8319236A0 true IT8319236A0 (it) | 1983-01-21 |
| IT1160470B IT1160470B (it) | 1987-03-11 |
Family
ID=11706432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT19236/83A IT1160470B (it) | 1982-01-25 | 1983-01-21 | Dispositivo a circuito integrato a semiconduttori |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS58127363A (it) |
| KR (1) | KR910002036B1 (it) |
| DE (1) | DE3302206A1 (it) |
| FR (1) | FR2520555B1 (it) |
| GB (2) | GB2113915B (it) |
| HK (2) | HK70687A (it) |
| IT (1) | IT1160470B (it) |
| MY (1) | MY8700613A (it) |
| SG (1) | SG36587G (it) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3926011B2 (ja) | 1997-12-24 | 2007-06-06 | 株式会社ルネサステクノロジ | 半導体装置の設計方法 |
| JP4292668B2 (ja) * | 2000-01-31 | 2009-07-08 | 富士ゼロックス株式会社 | 発光サイリスタアレイ |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3443176A (en) * | 1966-03-31 | 1969-05-06 | Ibm | Low resistivity semiconductor underpass connector and fabrication method therefor |
| DE1949484B2 (de) * | 1969-10-01 | 1978-02-23 | Ibm Deutschland Gmbh, 7000 Stuttgart | Leitungskreuzung fuer monolithisch integrierte halbleiterschaltungen und deren verwendung in einer speichermatrix |
| FR2244262B1 (it) * | 1973-09-13 | 1978-09-29 | Radiotechnique Compelec | |
| DE2514466B2 (de) * | 1975-04-03 | 1977-04-21 | Ibm Deutschland Gmbh, 7000 Stuttgart | Integrierte halbleiterschaltung |
| JPS5264830A (en) * | 1975-11-25 | 1977-05-28 | Hitachi Ltd | Power source supply system of integrated injection logical circuit |
| NL7700420A (nl) * | 1977-01-17 | 1978-07-19 | Philips Nv | Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan. |
| US4228450A (en) * | 1977-10-25 | 1980-10-14 | International Business Machines Corporation | Buried high sheet resistance structure for high density integrated circuits with reach through contacts |
| DE3143565A1 (de) * | 1981-11-03 | 1983-05-11 | International Microcircuits Inc., 95051 Santa Clara, Calif. | Integrierte schaltung |
-
1982
- 1982-01-25 JP JP57008932A patent/JPS58127363A/ja active Granted
- 1982-11-26 FR FR8219859A patent/FR2520555B1/fr not_active Expired
-
1983
- 1983-01-15 KR KR1019830000136A patent/KR910002036B1/ko not_active Expired
- 1983-01-21 GB GB08301731A patent/GB2113915B/en not_active Expired
- 1983-01-21 IT IT19236/83A patent/IT1160470B/it active
- 1983-01-24 DE DE19833302206 patent/DE3302206A1/de not_active Withdrawn
-
1984
- 1984-02-08 GB GB08403188A patent/GB2133622B/en not_active Expired
-
1987
- 1987-04-23 SG SG365/87A patent/SG36587G/en unknown
- 1987-10-01 HK HK706/87A patent/HK70687A/xx not_active IP Right Cessation
- 1987-10-01 HK HK712/87A patent/HK71287A/xx not_active IP Right Cessation
- 1987-12-30 MY MY613/87A patent/MY8700613A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2133622B (en) | 1985-11-20 |
| GB2133622A (en) | 1984-07-25 |
| HK70687A (en) | 1987-10-09 |
| HK71287A (en) | 1987-10-09 |
| IT1160470B (it) | 1987-03-11 |
| SG36587G (en) | 1987-07-24 |
| GB8403188D0 (en) | 1984-03-14 |
| FR2520555B1 (fr) | 1987-02-20 |
| GB2113915A (en) | 1983-08-10 |
| FR2520555A1 (fr) | 1983-07-29 |
| JPH0334661B2 (it) | 1991-05-23 |
| KR910002036B1 (ko) | 1991-03-30 |
| GB2113915B (en) | 1985-11-20 |
| MY8700613A (en) | 1987-12-31 |
| DE3302206A1 (de) | 1983-08-04 |
| KR840003536A (ko) | 1984-09-08 |
| GB8301731D0 (en) | 1983-02-23 |
| JPS58127363A (ja) | 1983-07-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19940121 |