IT8621855A0 - Transistore di potenza con comportamento migliorato e autoprotetto nei confronti della rottura secondaria diretta. - Google Patents

Transistore di potenza con comportamento migliorato e autoprotetto nei confronti della rottura secondaria diretta.

Info

Publication number
IT8621855A0
IT8621855A0 IT8621855A IT2185586A IT8621855A0 IT 8621855 A0 IT8621855 A0 IT 8621855A0 IT 8621855 A IT8621855 A IT 8621855A IT 2185586 A IT2185586 A IT 2185586A IT 8621855 A0 IT8621855 A0 IT 8621855A0
Authority
IT
Italy
Prior art keywords
protected
self
improved
power transistor
against direct
Prior art date
Application number
IT8621855A
Other languages
English (en)
Other versions
IT8621855A1 (it
IT1197307B (it
Inventor
B Murari
F Villa
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT21855/86A priority Critical patent/IT1197307B/it
Publication of IT8621855A0 publication Critical patent/IT8621855A0/it
Priority to DE8787113758T priority patent/DE3784827T2/de
Priority to US07/099,356 priority patent/US4821136A/en
Priority to EP87113758A priority patent/EP0263343B1/en
Priority to JP62245688A priority patent/JP2627511B2/ja
Publication of IT8621855A1 publication Critical patent/IT8621855A1/it
Application granted granted Critical
Publication of IT1197307B publication Critical patent/IT1197307B/it

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
IT21855/86A 1986-09-30 1986-09-30 Transistore di potenza con comportamento migliorato e autoprotetto nei confronti della rottura secondaria diretta IT1197307B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT21855/86A IT1197307B (it) 1986-09-30 1986-09-30 Transistore di potenza con comportamento migliorato e autoprotetto nei confronti della rottura secondaria diretta
DE8787113758T DE3784827T2 (de) 1986-09-30 1987-09-21 Leistungstransistor mit selbstschutz gegen sekundaerdurchschlag.
US07/099,356 US4821136A (en) 1986-09-30 1987-09-21 Power transistor with self-protection against direct secondary breakdown
EP87113758A EP0263343B1 (en) 1986-09-30 1987-09-21 Power transistor with self-protection against direct secondary breakdown
JP62245688A JP2627511B2 (ja) 1986-09-30 1987-09-29 電力トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT21855/86A IT1197307B (it) 1986-09-30 1986-09-30 Transistore di potenza con comportamento migliorato e autoprotetto nei confronti della rottura secondaria diretta

Publications (3)

Publication Number Publication Date
IT8621855A0 true IT8621855A0 (it) 1986-09-30
IT8621855A1 IT8621855A1 (it) 1988-03-30
IT1197307B IT1197307B (it) 1988-11-30

Family

ID=11187807

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21855/86A IT1197307B (it) 1986-09-30 1986-09-30 Transistore di potenza con comportamento migliorato e autoprotetto nei confronti della rottura secondaria diretta

Country Status (5)

Country Link
US (1) US4821136A (it)
EP (1) EP0263343B1 (it)
JP (1) JP2627511B2 (it)
DE (1) DE3784827T2 (it)
IT (1) IT1197307B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5261025A (en) * 1989-01-19 1993-11-09 Curtis Instruments, Inc. Method and apparatus for DC motor speed control
DE58907001D1 (de) * 1989-04-20 1994-03-24 Siemens Ag Schaltungsanordnung zur Temperaturüberwachung von in einem Halbleiterschaltkreis integrierten Leistungsschalttransistoren.
GB2283622B (en) * 1993-11-03 1998-01-14 Plessey Semiconductors Ltd Overvoltage protection circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423548B2 (it) * 1973-10-23 1979-08-14
US3924158A (en) * 1974-10-24 1975-12-02 Hughes Aircraft Co Electronic overload protection device
SE409789B (sv) * 1978-01-10 1979-09-03 Ericsson Telefon Ab L M Overstromsskyddad transistor
GB2020504B (en) * 1978-05-05 1982-06-09 Lucas Industries Ltd Transistor protection circuits
JPS56143706A (en) * 1980-04-09 1981-11-09 Mitsubishi Electric Corp Protective device for transistor
JPS5779719A (en) * 1980-11-05 1982-05-19 Hitachi Ltd Audio amplifier
DE3202319A1 (de) * 1982-01-26 1983-07-28 Siemens AG, 1000 Berlin und 8000 München Schutzschaltung fuer einen leistungstransistor
DE3309492A1 (de) * 1983-03-14 1984-09-20 Siemens AG, 1000 Berlin und 8000 München Anordnung mit einem schalttransistor
IT1213171B (it) * 1984-05-21 1989-12-14 Ates Componenti Elettron Transistore bipolare di potenza.
IT1215230B (it) * 1985-01-08 1990-01-31 Ates Componenti Elettron Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria

Also Published As

Publication number Publication date
US4821136A (en) 1989-04-11
JPS6394708A (ja) 1988-04-25
EP0263343B1 (en) 1993-03-17
DE3784827T2 (de) 1993-06-24
EP0263343A3 (en) 1989-10-11
EP0263343A2 (en) 1988-04-13
IT8621855A1 (it) 1988-03-30
JP2627511B2 (ja) 1997-07-09
DE3784827D1 (de) 1993-04-22
IT1197307B (it) 1988-11-30

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970929