IT8819306A0 - Transistore di tipo pnp verticale a collettore isolato con dispositivo per eliminare l'effetto di componenti parassiti di giunzione. - Google Patents

Transistore di tipo pnp verticale a collettore isolato con dispositivo per eliminare l'effetto di componenti parassiti di giunzione.

Info

Publication number
IT8819306A0
IT8819306A0 IT8819306A IT1930688A IT8819306A0 IT 8819306 A0 IT8819306 A0 IT 8819306A0 IT 8819306 A IT8819306 A IT 8819306A IT 1930688 A IT1930688 A IT 1930688A IT 8819306 A0 IT8819306 A0 IT 8819306A0
Authority
IT
Italy
Prior art keywords
eliminate
effect
type transistor
pnp type
vertical pnp
Prior art date
Application number
IT8819306A
Other languages
English (en)
Other versions
IT1215792B (it
Inventor
Marco Siligoni
Flavio Villa
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8819306A priority Critical patent/IT1215792B/it
Publication of IT8819306A0 publication Critical patent/IT8819306A0/it
Priority to US07/298,651 priority patent/US4979008A/en
Priority to EP89100945A priority patent/EP0327859B1/en
Priority to DE68921353T priority patent/DE68921353T2/de
Priority to JP1022754A priority patent/JP2700180B2/ja
Application granted granted Critical
Publication of IT1215792B publication Critical patent/IT1215792B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H10D62/138—Pedestal collectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
IT8819306A 1988-02-04 1988-02-04 Transistore di tipo pnp verticale a collettore isolato con dispositivo per eliminare l'effetto di componenti parassiti di giunzione. IT1215792B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8819306A IT1215792B (it) 1988-02-04 1988-02-04 Transistore di tipo pnp verticale a collettore isolato con dispositivo per eliminare l'effetto di componenti parassiti di giunzione.
US07/298,651 US4979008A (en) 1988-02-04 1989-01-18 Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components
EP89100945A EP0327859B1 (en) 1988-02-04 1989-01-20 A vertical isolated-collector transistor of the PNP type incorporating a device for suppressing the effects of parasitic junction components
DE68921353T DE68921353T2 (de) 1988-02-04 1989-01-20 Vertikaler Transistor des PNP-Typs mit isoliertem Kollektor mit einer Anordnung, um die Wirkung von parasitischen Übergangselementen zu unterdrücken.
JP1022754A JP2700180B2 (ja) 1988-02-04 1989-02-02 ｐｎｐ型の縦型孤立コレクタトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8819306A IT1215792B (it) 1988-02-04 1988-02-04 Transistore di tipo pnp verticale a collettore isolato con dispositivo per eliminare l'effetto di componenti parassiti di giunzione.

Publications (2)

Publication Number Publication Date
IT8819306A0 true IT8819306A0 (it) 1988-02-04
IT1215792B IT1215792B (it) 1990-02-22

Family

ID=11156588

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8819306A IT1215792B (it) 1988-02-04 1988-02-04 Transistore di tipo pnp verticale a collettore isolato con dispositivo per eliminare l'effetto di componenti parassiti di giunzione.

Country Status (5)

Country Link
US (1) US4979008A (it)
EP (1) EP0327859B1 (it)
JP (1) JP2700180B2 (it)
DE (1) DE68921353T2 (it)
IT (1) IT1215792B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153697A (en) * 1989-02-10 1992-10-06 Texas Instruments Incorporated Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same
US5119157A (en) * 1989-03-24 1992-06-02 International Business Machines Corporation Semiconductor device with self-aligned contact to buried subcollector
JPH0812865B2 (ja) * 1989-06-06 1996-02-07 株式会社東芝 バイポーラトランジスタとその製造方法
JP2835116B2 (ja) * 1989-09-29 1998-12-14 株式会社東芝 電力用ｉｃおよびその製造方法
US5237198A (en) * 1989-12-16 1993-08-17 Samsung Electronics Co., Ltd. Lateral PNP transistor using a latch voltage of NPN transistor
EP0451423A1 (en) * 1990-04-10 1991-10-16 International Business Machines Corporation Vertical isolated-collector PNP transistor structure
JP2825169B2 (ja) * 1990-09-17 1998-11-18 キヤノン株式会社 半導体装置
US5179432A (en) * 1991-08-15 1993-01-12 Micrel, Inc. Integrated PNP power bipolar transistor with low injection into substrate
US5578862A (en) * 1992-12-30 1996-11-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit with layer for isolating elements in substrate
US5929506A (en) * 1996-12-06 1999-07-27 Texas Instrument Incorporated Isolated vertical PNP transistor and methods for making same in a digital BiCMOS process
DE19917155C1 (de) * 1999-04-16 2000-06-21 Bosch Gmbh Robert Schutzvorrichtung gegen elektrostatische Entladungen
US7572707B2 (en) * 2007-05-25 2009-08-11 Micrel, Inc. Method of manufacturing NPN device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4038680A (en) * 1972-12-29 1977-07-26 Sony Corporation Semiconductor integrated circuit device
JPS5416190A (en) * 1977-07-06 1979-02-06 Matsushita Electronics Corp Vertical type pnp transistor for semiconductor integrated circuits
JPS5730359A (en) * 1980-07-30 1982-02-18 Nec Corp Semiconductor device
JPS57162365A (en) * 1981-03-30 1982-10-06 Toshiba Corp Semiconductor device
JPS59145569A (ja) * 1983-02-09 1984-08-21 Matsushita Electronics Corp マルチコレクタ縦型ｐｎｐトランジスタ
JPS6170758A (ja) * 1984-09-06 1986-04-11 シーメンス、アクチエンゲゼルシヤフト トランジスタ構造
JPH0654777B2 (ja) * 1985-02-12 1994-07-20 キヤノン株式会社 ラテラルトランジスタを有する回路
US4684970A (en) * 1985-07-29 1987-08-04 Rca Corporation High current lateral transistor structure
IT1220185B (it) * 1987-10-21 1990-06-06 Sgs Microelettronica Spa Sistema antisaturazione per transistore pnp verticale a collettore isolato e struttura integrata di quest'ultimo

Also Published As

Publication number Publication date
EP0327859A2 (en) 1989-08-16
DE68921353T2 (de) 1995-08-17
EP0327859B1 (en) 1995-03-01
DE68921353D1 (de) 1995-04-06
EP0327859A3 (en) 1990-06-13
US4979008A (en) 1990-12-18
JP2700180B2 (ja) 1998-01-19
JPH025532A (ja) 1990-01-10
IT1215792B (it) 1990-02-22

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970227