IT8822367A0 - Circuito di spegnimento attivo per fotodiodi a semiconduttore a valanga per singoli fotoni, adatto per il funzionamento con fotodiodo in posizione remota - Google Patents
Circuito di spegnimento attivo per fotodiodi a semiconduttore a valanga per singoli fotoni, adatto per il funzionamento con fotodiodo in posizione remotaInfo
- Publication number
- IT8822367A0 IT8822367A0 IT8822367A IT2236788A IT8822367A0 IT 8822367 A0 IT8822367 A0 IT 8822367A0 IT 8822367 A IT8822367 A IT 8822367A IT 2236788 A IT2236788 A IT 2236788A IT 8822367 A0 IT8822367 A0 IT 8822367A0
- Authority
- IT
- Italy
- Prior art keywords
- photodides
- single photon
- shutdown circuit
- photon avalanche
- avalanche semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
- G01J2001/4466—Avalanche
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Electronic Switches (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8822367A IT1229945B (it) | 1988-10-20 | 1988-10-20 | Circuito di spegnimento attivo per fotodiodi a semiconduttore a valanga per singoli fotoni, adatto per il funzionamento con fotodiodo in posizione remota |
| EP19890202618 EP0365095A3 (en) | 1988-10-20 | 1989-10-17 | Single photon semiconductor avalanche photodiode and active quenching circuit assembly |
| US07/422,899 US4963727A (en) | 1988-10-20 | 1989-10-18 | Active quenching circuit for avalanche photodiodes |
| JP1271887A JPH02170477A (ja) | 1988-10-20 | 1989-10-20 | 能動クエンチング回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8822367A IT1229945B (it) | 1988-10-20 | 1988-10-20 | Circuito di spegnimento attivo per fotodiodi a semiconduttore a valanga per singoli fotoni, adatto per il funzionamento con fotodiodo in posizione remota |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8822367A0 true IT8822367A0 (it) | 1988-10-20 |
| IT1229945B IT1229945B (it) | 1991-09-17 |
Family
ID=11195308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT8822367A IT1229945B (it) | 1988-10-20 | 1988-10-20 | Circuito di spegnimento attivo per fotodiodi a semiconduttore a valanga per singoli fotoni, adatto per il funzionamento con fotodiodo in posizione remota |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4963727A (it) |
| EP (1) | EP0365095A3 (it) |
| JP (1) | JPH02170477A (it) |
| IT (1) | IT1229945B (it) |
Cited By (2)
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|---|---|---|---|---|
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| CN113253088A (zh) * | 2021-06-25 | 2021-08-13 | 上海瞻芯电子科技有限公司 | 晶体管栅氧测试装置及系统 |
Families Citing this family (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8906650D0 (en) * | 1989-03-22 | 1989-05-04 | Harley Phillip E | Electronic quenching circuit |
| GB8915245D0 (en) * | 1989-07-03 | 1989-08-23 | Secr Defence | Avalanche photodiode quenching circuit |
| US5198701A (en) * | 1990-12-24 | 1993-03-30 | Davies Robert B | Current source with adjustable temperature variation |
| US5526546A (en) * | 1993-04-23 | 1996-06-18 | Revlon Consumer Products Corporation | Surface treated applicators having bristles coated with an etched layer ions produced by an ion-producing gas plasma |
| US5521743A (en) * | 1993-12-16 | 1996-05-28 | Rockwell International Corporation | Photon-counting spatial light modulator with APD structure |
| US5532474A (en) * | 1993-12-17 | 1996-07-02 | Eg&G Limited | Active quench circuit and reset circuit for avalanche photodiode |
| US5933042A (en) * | 1997-07-01 | 1999-08-03 | Eg&G Canada, Ltd. | Active quench circuit for an avalanche current device |
| US6218657B1 (en) * | 1998-10-15 | 2001-04-17 | International Business Machines Corporation | System for gated detection of optical pulses containing a small number of photons using an avalanche photodiode |
| GB9827748D0 (en) * | 1998-12-18 | 1999-02-10 | Secr Defence | Improvements in avalanche photo-diodes |
| US6580845B1 (en) | 2000-08-11 | 2003-06-17 | General Nutronics, Inc. | Method and device for switching wavelength division multiplexed optical signals using emitter arrays |
| US6696887B2 (en) * | 2001-09-27 | 2004-02-24 | Matthew S. Taubman | Transistor-based interface circuitry |
| CN100410636C (zh) * | 2004-03-19 | 2008-08-13 | 华东师范大学 | 一种apd单光子探测的电路模块 |
| US7045761B2 (en) * | 2004-06-21 | 2006-05-16 | The Boeing Company | Self-pixelating focal plane array with electronic output |
| DE102005051571B4 (de) * | 2005-10-21 | 2013-06-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photodioden-Chip hoher Grenzfrequenz |
| US7897906B2 (en) * | 2007-03-23 | 2011-03-01 | Excelitas Canada Inc. | Double quench circuit for an avalanche current device |
| CN101170362B (zh) * | 2007-11-08 | 2011-01-12 | 华东师范大学 | 一种apd单光子探测的电路模块 |
| US8803075B2 (en) * | 2008-04-18 | 2014-08-12 | Saint-Gobain Ceramics & Plastics, Inc. | Radiation detector device |
| CN101923173B (zh) * | 2009-06-10 | 2014-10-01 | 圣戈本陶瓷及塑料股份有限公司 | 闪烁体以及检测器组件 |
| US9354113B1 (en) | 2010-11-05 | 2016-05-31 | Stc.Unm | Impact ionization devices under dynamic electric fields |
| DE102010060527B3 (de) * | 2010-11-12 | 2012-04-19 | Picoquant Gmbh | Schaltungsanordnung zum Nachweis einzelner Photonen |
| US9442201B2 (en) | 2013-09-12 | 2016-09-13 | Siemens Medical Solutions Usa, Inc. | CMOS SPAD array with mixed timing pick-off for time-of-flight positron emission tomography |
| US10128398B1 (en) | 2014-05-23 | 2018-11-13 | Stc.Unm | Resonance avalanche photodiodes for dynamic biasing |
| CN104218917A (zh) * | 2014-07-24 | 2014-12-17 | 安徽问天量子科技股份有限公司 | 用于消除apd雪崩信号输出端的尖峰噪声的自差分滤波装置 |
| CN104198058B (zh) * | 2014-08-05 | 2017-06-06 | 清华大学 | 单光子雪崩二极管的淬灭和读出电路 |
| CN104990632A (zh) * | 2015-07-14 | 2015-10-21 | 华中科技大学 | 一种门控差分单光子探测系统 |
| US9671284B1 (en) | 2016-01-14 | 2017-06-06 | Kiskeya Microsystems Llc | Single-photon avalanche diode circuit with variable hold-off time and dual delay regime |
| CN106482840B (zh) * | 2016-09-27 | 2019-03-08 | 山东大学 | 一种用于单光子探测器的主动猝灭电路及其工作方法 |
| US10158038B1 (en) | 2018-05-17 | 2018-12-18 | Hi Llc | Fast-gated photodetector architectures comprising dual voltage sources with a switch configuration |
| US10340408B1 (en) | 2018-05-17 | 2019-07-02 | Hi Llc | Non-invasive wearable brain interface systems including a headgear and a plurality of self-contained photodetector units configured to removably attach to the headgear |
| US10515993B2 (en) | 2018-05-17 | 2019-12-24 | Hi Llc | Stacked photodetector assemblies |
| US10420498B1 (en) | 2018-06-20 | 2019-09-24 | Hi Llc | Spatial and temporal-based diffusive correlation spectroscopy systems and methods |
| US11213206B2 (en) | 2018-07-17 | 2022-01-04 | Hi Llc | Non-invasive measurement systems with single-photon counting camera |
| US11006876B2 (en) | 2018-12-21 | 2021-05-18 | Hi Llc | Biofeedback for awareness and modulation of mental state using a non-invasive brain interface system and method |
| JP7278821B2 (ja) | 2019-03-22 | 2023-05-22 | 株式会社東芝 | センサ及び距離計測装置 |
| US11813041B2 (en) | 2019-05-06 | 2023-11-14 | Hi Llc | Photodetector architectures for time-correlated single photon counting |
| WO2020236371A1 (en) | 2019-05-21 | 2020-11-26 | Hi Llc | Photodetector architectures for efficient fast-gating |
| US10868207B1 (en) | 2019-06-06 | 2020-12-15 | Hi Llc | Photodetector systems with low-power time-to-digital converter architectures to determine an arrival time of photon at a photodetector based on event detection time window |
| US11162839B2 (en) * | 2019-12-12 | 2021-11-02 | Stmicroelectronics (Research & Development) Limited | Photodetection circuit with extended hold-off time for SPAD quench assistance |
| US11105679B2 (en) | 2019-12-12 | 2021-08-31 | Stmicroelectronics (Research & Development) Limited | Extended hold-off time for SPAD quench assistance |
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| WO2021167893A1 (en) | 2020-02-21 | 2021-08-26 | Hi Llc | Integrated detector assemblies for a wearable module of an optical measurement system |
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| WO2021188485A1 (en) | 2020-03-20 | 2021-09-23 | Hi Llc | Maintaining consistent photodetector sensitivity in an optical measurement system |
| US11877825B2 (en) | 2020-03-20 | 2024-01-23 | Hi Llc | Device enumeration in an optical measurement system |
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| WO2021188488A1 (en) | 2020-03-20 | 2021-09-23 | Hi Llc | Bias voltage generation in an optical measurement system |
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| WO2021188496A1 (en) | 2020-03-20 | 2021-09-23 | Hi Llc | Photodetector calibration of an optical measurement system |
| US11864867B2 (en) | 2020-03-20 | 2024-01-09 | Hi Llc | Control circuit for a light source in an optical measurement system by applying voltage with a first polarity to start an emission of a light pulse and applying voltage with a second polarity to stop the emission of the light pulse |
| US11857348B2 (en) | 2020-03-20 | 2024-01-02 | Hi Llc | Techniques for determining a timing uncertainty of a component of an optical measurement system |
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Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4001614A (en) * | 1975-08-27 | 1977-01-04 | Hughes Aircraft Company | Bias circuit for a photo-avalanche diode |
| US4303861A (en) * | 1980-03-28 | 1981-12-01 | Battelle Development Corporation | Photon detector system |
| US4389695A (en) * | 1981-02-09 | 1983-06-21 | Carpenter Jr Roy B | Equipment for protecting electronic equipment and personnel against inadvertent occurrence of extended or transient high voltages and method |
| JPS5838041A (ja) * | 1981-08-31 | 1983-03-05 | Asahi Optical Co Ltd | Apdバイアス回路 |
| JPS6278886A (ja) * | 1985-10-01 | 1987-04-11 | Iwatsu Electric Co Ltd | アバランシエ・ホトダイオ−ドのバイアス回路 |
| US4754131A (en) * | 1985-12-31 | 1988-06-28 | American Telephone And Telegraph Company, At&T Bell Laboratories | Devices using avalanche photodiode and capable of detecting a small number of photons |
| EP0333751B1 (en) * | 1986-11-25 | 1992-07-22 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern | Avalanche photodiode quenching circuit |
-
1988
- 1988-10-20 IT IT8822367A patent/IT1229945B/it active
-
1989
- 1989-10-17 EP EP19890202618 patent/EP0365095A3/en not_active Ceased
- 1989-10-18 US US07/422,899 patent/US4963727A/en not_active Expired - Fee Related
- 1989-10-20 JP JP1271887A patent/JPH02170477A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112444315A (zh) * | 2020-10-15 | 2021-03-05 | 良业科技集团股份有限公司 | 一种被动淬灭电路 |
| CN113253088A (zh) * | 2021-06-25 | 2021-08-13 | 上海瞻芯电子科技有限公司 | 晶体管栅氧测试装置及系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1229945B (it) | 1991-09-17 |
| EP0365095A2 (en) | 1990-04-25 |
| JPH02170477A (ja) | 1990-07-02 |
| US4963727A (en) | 1990-10-16 |
| EP0365095A3 (en) | 1991-02-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19941027 |