IT8947768A0 - Fotodiodo con strato epitassiale passivato, matrice di tali fotodiodi e relativo metodo di passivazione - Google Patents

Fotodiodo con strato epitassiale passivato, matrice di tali fotodiodi e relativo metodo di passivazione

Info

Publication number
IT8947768A0
IT8947768A0 IT8947768A IT4776889A IT8947768A0 IT 8947768 A0 IT8947768 A0 IT 8947768A0 IT 8947768 A IT8947768 A IT 8947768A IT 4776889 A IT4776889 A IT 4776889A IT 8947768 A0 IT8947768 A0 IT 8947768A0
Authority
IT
Italy
Prior art keywords
photodiodes
photodiode
matrix
epitaxial layer
passivation method
Prior art date
Application number
IT8947768A
Other languages
English (en)
Inventor
Charles A Cockrum
Peter R Bratt
David R Rhiger
Owen K Wu
Original Assignee
Santa Barbara Res Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Res Center filed Critical Santa Barbara Res Center
Publication of IT8947768A0 publication Critical patent/IT8947768A0/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
IT8947768A 1988-03-29 1989-03-22 Fotodiodo con strato epitassiale passivato, matrice di tali fotodiodi e relativo metodo di passivazione IT8947768A0 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/174,745 US5936268A (en) 1988-03-29 1988-03-29 Epitaxial passivation of group II-VI infrared photodetectors

Publications (1)

Publication Number Publication Date
IT8947768A0 true IT8947768A0 (it) 1989-03-22

Family

ID=22637346

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8947768A IT8947768A0 (it) 1988-03-29 1989-03-22 Fotodiodo con strato epitassiale passivato, matrice di tali fotodiodi e relativo metodo di passivazione

Country Status (5)

Country Link
US (1) US5936268A (it)
FR (1) FR2954996A1 (it)
GB (1) GB2372630B (it)
IT (1) IT8947768A0 (it)
NL (1) NL8900764A (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6030853A (en) * 1993-08-13 2000-02-29 Drs Fpa, L.P. Method of producing intrinsic p-type HgCdTe using CdTe capping layer
US6518080B2 (en) 2001-06-19 2003-02-11 Sensors Unlimited, Inc. Method of fabricating low dark current photodiode arrays
AUPS001102A0 (en) * 2002-01-17 2002-02-07 University Of Western Australia, The An n-p junction and a method for making an n-p junction
US6803557B1 (en) * 2002-09-27 2004-10-12 Raytheon Company Photodiode having voltage tunable spectral response
US20040109692A1 (en) * 2002-12-09 2004-06-10 James Plante FSO communication systems having high performance detectors
US6998320B2 (en) * 2003-04-23 2006-02-14 Triquint Semiconductor, Inc. Passivation layer for group III-V semiconductor devices
TW200818534A (en) * 2006-08-10 2008-04-16 Icemos Technology Corp Method of manufacturing a photodiode array with through-wafer vias
US8669588B2 (en) * 2009-07-06 2014-03-11 Raytheon Company Epitaxially-grown position sensitive detector
KR101133154B1 (ko) 2011-02-03 2012-04-06 디지털옵틱스 코포레이션 이스트 상이한 파장을 균일하게 수광하기 위한 차등 높이 실리콘을 포함하는 이면 조사 센서 패키지
KR101095945B1 (ko) 2011-02-03 2011-12-19 테쎄라 노쓰 아메리카, 아이엔씨. 상이한 파장을 균일하게 수광하기 위한 흡광 재료를 포함하는 이면 조사 센서 패키지
GB201104261D0 (en) 2011-03-14 2011-04-27 Univ Leeds Oxide removal from semiconductor surfaces
US8441087B2 (en) 2011-07-22 2013-05-14 Raytheon Company Direct readout focal plane array
US10115764B2 (en) 2011-08-15 2018-10-30 Raytheon Company Multi-band position sensitive imaging arrays
WO2013040184A1 (en) 2011-09-13 2013-03-21 L-3 Communications Cincinnati Electronics Corporation Frontside-illuminated barrier infrared photodetector device and methods of fabricating the same
FR2983351B1 (fr) * 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module
CN112909117B (zh) * 2021-01-22 2022-08-02 湖北大学 一种硅掺杂铈元素红外探测器、制备方法及系统

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2168934B1 (it) * 1972-01-27 1977-04-01 Telecommunications Sa
US3977018A (en) * 1972-12-04 1976-08-24 Texas Instruments Incorporated Passivation of mercury cadmium telluride semiconductor surfaces by anodic oxidation
US3858974A (en) * 1973-05-03 1975-01-07 Stephen A Liguori Film record
FR2281650A1 (fr) * 1974-08-06 1976-03-05 Telecommunications Sa Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
GB1568958A (en) * 1976-10-22 1980-06-11 Mullard Ltd Methods of manufacturing infra-red sensitive devices
US4137544A (en) * 1977-07-05 1979-01-30 Honeywell Inc. Mercury cadmium telluride photodiode
US4206003A (en) * 1977-07-05 1980-06-03 Honeywell Inc. Method of forming a mercury cadmium telluride photodiode
GB2027986B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Infra-red detectors
US4357620A (en) * 1980-11-18 1982-11-02 The United States Of America As Represented By The Secretary Of The Army Liquid-phase epitaxial growth of cdTe on HgCdTe
US4376659A (en) * 1981-06-01 1983-03-15 Texas Instruments Incorporated Process for forming semiconductor alloys having a desired bandgap
EP0068652B1 (en) * 1981-06-24 1988-05-25 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Photo diodes
EP0090669A3 (en) * 1982-03-31 1990-12-19 Honeywell Inc. Electromagnetic radiation detector
JPS5984467A (ja) * 1982-11-06 1984-05-16 Mitsubishi Electric Corp モノリシツク赤外線電荷転送素子
US4549195A (en) * 1983-04-14 1985-10-22 Westinghouse Electric Corp. Heterojunction semiconductor device
JPS603165A (ja) * 1983-06-20 1985-01-09 Matsushita Electric Ind Co Ltd 受光素子
US4616403A (en) * 1984-08-31 1986-10-14 Texas Instruments Incorporated Configuration of a metal insulator semiconductor with a processor based gate
US4611091A (en) * 1984-12-06 1986-09-09 Atlantic Richfield Company CuInSe2 thin film solar cell with thin CdS and transparent window layer
US4646120A (en) * 1985-03-21 1987-02-24 The United States Of America As Represented By The Secretary Of The Army Photodiode array
US4639756A (en) * 1986-05-05 1987-01-27 Santa Barbara Research Center Graded gap inversion layer photodiode array

Also Published As

Publication number Publication date
GB2372630B (en) 2003-01-15
NL8900764A (nl) 2001-06-01
GB8905787D0 (en) 2002-05-22
FR2954996A1 (fr) 2011-07-08
GB2372630A (en) 2002-08-28
US5936268A (en) 1999-08-10

Similar Documents

Publication Publication Date Title
IT8947768A0 (it) Fotodiodo con strato epitassiale passivato, matrice di tali fotodiodi e relativo metodo di passivazione
NO872906D0 (no) Indikeringselement med beskyttende lag og fremgangsmaate for fremstilling av samme.
DE3672519D1 (de) Planares halbleiterbauteil mit einer schutzringstruktur, klasse solcher bauteile und herstellungsverfahren.
DE3775858D1 (de) Aus mikrokapseln mit verzoegerter freisetzung hergestellte tabletten.
NO881761D0 (no) Substrat av polymert materiale, samt fremstilling og anvendelse av aubstratet.
DE68901980D1 (de) Korngrenzen-uebergangseinrichtungen unter verwendung von hochtemperatur-supraleitern.
KR870011686A (ko) 반도체장치 및 그 제조방법
DE3788917D1 (de) Eine optisch bistabile Photodiodevorrichtung.
DE58908152D1 (de) Halbleiterbauelement mit Passivierungsschicht.
DE59009167D1 (de) Elektroaktive Passivierschicht.
KR870009477A (ko) 반도체장치와 그 제조방법
DE3775896D1 (de) Lippenstiftprobe mit schutzschicht.
NO872246L (no) Beholder med flat toppdel, samt emne til fremstilling av denne.
DE3784191D1 (de) Halbleiterphotodetektor mit schottky-uebergang.
KR900011086A (ko) 반도체 다이오드 레이저 및 그 제조방법
IT8622307A0 (it) Elemento di diodo fotosensibile eprocedimento di fabbricazione.
DE3869519D1 (de) Halbleiterschichtstruktur mit einer aluminium-silizium-legierungsschicht.
DE3771546D1 (de) Hochtemperatur-schutzschicht.
NL194140B (nl) Halfgeleiderinrichting met matrixbedradingssectie en foto-elektrische omzetfunctie.
DE3650362D1 (de) Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren.
IT8424139A0 (it) Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione.
DE69030462D1 (de) Strahlungsempfindliche Vorrichtung in retinaähnlicher Konfiguration
DK579386D0 (da) Fremgangsmaade til fremstilling af en formfast, varmeisolerendeog diffusionstaet skaal
NO893246L (no) Innvendig oxyderte roer og fremstilling derav.
DE68911953D1 (de) Polymerisierte organische Passivierungsschicht für Supraleiter.