IT8967045A0 - Modulatore elettro ottico a doppio pozzo quantico - Google Patents
Modulatore elettro ottico a doppio pozzo quanticoInfo
- Publication number
- IT8967045A0 IT8967045A0 IT8967045A IT6704589A IT8967045A0 IT 8967045 A0 IT8967045 A0 IT 8967045A0 IT 8967045 A IT8967045 A IT 8967045A IT 6704589 A IT6704589 A IT 6704589A IT 8967045 A0 IT8967045 A0 IT 8967045A0
- Authority
- IT
- Italy
- Prior art keywords
- quantum well
- optical modulator
- electro optical
- double quantum
- well electro
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/146—Superlattices; Multiple quantum well structures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
- G02F1/0158—Blue-shift of the absorption band
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
- G02F1/01733—Coupled or double quantum wells
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8967045A IT1232381B (it) | 1989-01-26 | 1989-01-26 | Modulatore elettro ottico a doppio pozzo quantico |
| US07/450,621 US5105301A (en) | 1989-01-26 | 1989-12-14 | Coupled quantum-well electro-optical modulator |
| JP2010777A JPH02239222A (ja) | 1989-01-26 | 1990-01-22 | カンタムウエルを有する電気光学的モジユレータ |
| DE69023013T DE69023013T2 (de) | 1989-01-26 | 1990-01-24 | Elektrooptischer Modulator mit gekoppelter Quantum-Well-Struktur. |
| CA002008513A CA2008513C (en) | 1989-01-26 | 1990-01-24 | Coupled quantum well electro-optical modulator |
| DE90101380T DE380072T1 (de) | 1989-01-26 | 1990-01-24 | Elektrooptischer Modulator mit gekoppelter Quantum-Well-Struktur. |
| EP90101380A EP0380072B1 (en) | 1989-01-26 | 1990-01-24 | Coupled quantum-well electro-optical modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8967045A IT1232381B (it) | 1989-01-26 | 1989-01-26 | Modulatore elettro ottico a doppio pozzo quantico |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8967045A0 true IT8967045A0 (it) | 1989-01-26 |
| IT1232381B IT1232381B (it) | 1992-02-17 |
Family
ID=11299149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT8967045A IT1232381B (it) | 1989-01-26 | 1989-01-26 | Modulatore elettro ottico a doppio pozzo quantico |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5105301A (it) |
| EP (1) | EP0380072B1 (it) |
| JP (1) | JPH02239222A (it) |
| CA (1) | CA2008513C (it) |
| DE (2) | DE69023013T2 (it) |
| IT (1) | IT1232381B (it) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5311009A (en) * | 1992-07-31 | 1994-05-10 | At&T Bell Laboratories | Quantum well device for producing localized electron states for detectors and modulators |
| US5345328A (en) * | 1992-08-12 | 1994-09-06 | Sandia Corporation | Tandem resonator reflectance modulator |
| US5436756A (en) * | 1992-09-30 | 1995-07-25 | At&T Bell Laboratories | Suppressed photocurrent, quantum well optical modulation device |
| FR2696874B1 (fr) * | 1992-10-13 | 1994-12-09 | Thomson Csf | Modulateur d'onde électromagnétique à puits quantiques. |
| US5323019A (en) * | 1993-04-20 | 1994-06-21 | The United States Of America As Represented By The Secretary Of The Army | All optical multiple quantum well optical modulator |
| DE4313488A1 (de) * | 1993-04-24 | 1994-10-27 | Sel Alcatel Ag | Optoelektronisches Halbleiterbauelement |
| US5485014A (en) * | 1993-12-30 | 1996-01-16 | The University Of Connecticut | Multiple quantum well birefringent spatial light modulator |
| JPH09512348A (ja) * | 1994-04-26 | 1997-12-09 | テレフオンアクチーボラゲツト エル エム エリクソン | 超格子光吸収体 |
| US5528707A (en) * | 1994-09-30 | 1996-06-18 | Honeywell Inc. | Bidirectional optical modulator having lightwave signal conservation |
| US5608566A (en) * | 1995-08-11 | 1997-03-04 | The United States Of America As Represented By The Secretary Of The Army | Multi-directional electro-optic switch |
| US5647029A (en) * | 1995-11-27 | 1997-07-08 | Lucent Technologies Inc. | Traveling wave quantum well waveguide modulators using velocity matching for improved frequency performance |
| FR2748129B1 (fr) * | 1996-04-29 | 1998-06-12 | Alsthom Cge Alcatel | Modulateur electro-optique a puits quantiques |
| US6466703B1 (en) | 2000-04-07 | 2002-10-15 | Hrl Laboratories, Llc | Method and apparatus for electro-optic delay generation of optical signals |
| US6819476B2 (en) * | 2002-05-03 | 2004-11-16 | The Boeing Company | Active optical system for changing the wavelength of an image |
| US6710367B1 (en) * | 2002-05-17 | 2004-03-23 | The United States Of America As Represented By The Secretary Of The Army | Multiple quantum well semiconductor optical modulator |
| US7430376B1 (en) | 2004-11-29 | 2008-09-30 | Hrl Laboratories, Llc | All-optical delay generator for PPM communication systems based on a non-linear waveguide with a chirped DBR |
| US7196349B2 (en) * | 2005-02-17 | 2007-03-27 | Bae Systems Information And Electronic Systems Integration Inc. | Resonant cavity enhanced multi-quantum well light modulator and detector |
| US7180648B2 (en) * | 2005-06-13 | 2007-02-20 | Massachusetts Institute Of Technology | Electro-absorption modulator device and methods for fabricating the same |
| KR100987793B1 (ko) * | 2008-10-10 | 2010-10-13 | 한국전자통신연구원 | 반사형 반도체 광 증폭기 및 이를 이용하는 광신호 처리방법 |
| US8345349B2 (en) * | 2009-05-27 | 2013-01-01 | Hewlett-Packard Development Company, L.P. | Compact optical resonators |
| KR102477094B1 (ko) | 2016-01-08 | 2022-12-13 | 삼성전자주식회사 | 비대칭 다준위 에너지를 갖는 3중 연결 양자우물 구조를 포함하는 광학 소자 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4439782A (en) * | 1980-11-21 | 1984-03-27 | University Of Illinois Foundation | Semiconductor device with heterojunction of Alx Ga1-x As--AlAs--Ga |
| JPS59116612A (ja) * | 1982-12-23 | 1984-07-05 | Toshiba Corp | 光変調器 |
| JPS6050979A (ja) * | 1983-08-30 | 1985-03-22 | Semiconductor Energy Lab Co Ltd | 発光半導体装置 |
| US4716449A (en) * | 1984-03-14 | 1987-12-29 | American Telephone And Telegraph Company At&T Bell Laboratories | Nonlinear and bistable optical device |
| JPH0227648B2 (ja) * | 1985-01-28 | 1990-06-19 | Nippon Telegraph & Telephone | Ryoshiidogatahikarihenchoki |
| JPH0823631B2 (ja) * | 1985-02-13 | 1996-03-06 | 日本電気株式会社 | 光変調器 |
| JPS61256319A (ja) * | 1985-05-10 | 1986-11-13 | Hitachi Ltd | 光変調器 |
| JPS623221A (ja) * | 1985-06-28 | 1987-01-09 | Nec Corp | 光変調器 |
| JPH0650366B2 (ja) * | 1985-06-28 | 1994-06-29 | 日本電気株式会社 | 光変調器 |
| JPS62169115A (ja) * | 1986-01-21 | 1987-07-25 | Nec Corp | 光変調器 |
| JPH0728047B2 (ja) * | 1986-02-17 | 1995-03-29 | 日本電気株式会社 | 光トランジスタ |
-
1989
- 1989-01-26 IT IT8967045A patent/IT1232381B/it active
- 1989-12-14 US US07/450,621 patent/US5105301A/en not_active Expired - Fee Related
-
1990
- 1990-01-22 JP JP2010777A patent/JPH02239222A/ja active Granted
- 1990-01-24 CA CA002008513A patent/CA2008513C/en not_active Expired - Fee Related
- 1990-01-24 EP EP90101380A patent/EP0380072B1/en not_active Expired - Lifetime
- 1990-01-24 DE DE69023013T patent/DE69023013T2/de not_active Expired - Fee Related
- 1990-01-24 DE DE90101380T patent/DE380072T1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0380072B1 (en) | 1995-10-18 |
| DE69023013T2 (de) | 1996-04-18 |
| CA2008513A1 (en) | 1990-07-26 |
| DE380072T1 (de) | 1993-10-14 |
| DE69023013D1 (de) | 1995-11-23 |
| CA2008513C (en) | 1994-01-25 |
| JPH02239222A (ja) | 1990-09-21 |
| EP0380072A3 (en) | 1992-10-21 |
| US5105301A (en) | 1992-04-14 |
| EP0380072A2 (en) | 1990-08-01 |
| JPH0529888B2 (it) | 1993-05-06 |
| IT1232381B (it) | 1992-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19950120 |