IT8968155A0 - Discriminatore differenziale di tensione in tecnologia c-mos - Google Patents

Discriminatore differenziale di tensione in tecnologia c-mos

Info

Publication number
IT8968155A0
IT8968155A0 IT68155A IT6815589A IT8968155A0 IT 8968155 A0 IT8968155 A0 IT 8968155A0 IT 68155 A IT68155 A IT 68155A IT 6815589 A IT6815589 A IT 6815589A IT 8968155 A0 IT8968155 A0 IT 8968155A0
Authority
IT
Italy
Prior art keywords
voltage differential
mos technology
differential discriminator
discriminator
mos
Prior art date
Application number
IT68155A
Other languages
English (en)
Other versions
IT8968155A1 (it
IT1238022B (it
Inventor
Mario Fassino
Mario Sartori
Original Assignee
Cselt Centro Studi Lab Telecom
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cselt Centro Studi Lab Telecom filed Critical Cselt Centro Studi Lab Telecom
Priority to IT06815589A priority Critical patent/IT1238022B/it
Publication of IT8968155A0 publication Critical patent/IT8968155A0/it
Priority to US07/630,277 priority patent/US5155397A/en
Priority to CA002033020A priority patent/CA2033020C/en
Priority to DE69018948T priority patent/DE69018948T2/de
Priority to EP90125222A priority patent/EP0434090B1/en
Priority to DE199090125222T priority patent/DE434090T1/de
Publication of IT8968155A1 publication Critical patent/IT8968155A1/it
Application granted granted Critical
Publication of IT1238022B publication Critical patent/IT1238022B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
IT06815589A 1989-12-22 1989-12-22 Discriminatore differenziale di tensione in tecnologia c-mos. IT1238022B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT06815589A IT1238022B (it) 1989-12-22 1989-12-22 Discriminatore differenziale di tensione in tecnologia c-mos.
US07/630,277 US5155397A (en) 1989-12-22 1990-12-19 C-mos differential sense amplifier
CA002033020A CA2033020C (en) 1989-12-22 1990-12-21 C-mos differential sense amplifier
DE69018948T DE69018948T2 (de) 1989-12-22 1990-12-21 Differentieller C-MOS-Leserverstärker.
EP90125222A EP0434090B1 (en) 1989-12-22 1990-12-21 C-MOS differential sense amplifier
DE199090125222T DE434090T1 (de) 1989-12-22 1990-12-21 Differentieller c-mos-leserverstaerker.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT06815589A IT1238022B (it) 1989-12-22 1989-12-22 Discriminatore differenziale di tensione in tecnologia c-mos.

Publications (3)

Publication Number Publication Date
IT8968155A0 true IT8968155A0 (it) 1989-12-22
IT8968155A1 IT8968155A1 (it) 1991-06-22
IT1238022B IT1238022B (it) 1993-06-23

Family

ID=11308223

Family Applications (1)

Application Number Title Priority Date Filing Date
IT06815589A IT1238022B (it) 1989-12-22 1989-12-22 Discriminatore differenziale di tensione in tecnologia c-mos.

Country Status (5)

Country Link
US (1) US5155397A (it)
EP (1) EP0434090B1 (it)
CA (1) CA2033020C (it)
DE (2) DE69018948T2 (it)
IT (1) IT1238022B (it)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5467300A (en) * 1990-06-14 1995-11-14 Creative Integrated Systems, Inc. Grounded memory core for Roms, Eproms, and EEpproms having an address decoder, and sense amplifier
US5347183A (en) * 1992-10-05 1994-09-13 Cypress Semiconductor Corporation Sense amplifier with limited output voltage swing and cross-coupled tail device feedback
US5485430A (en) * 1992-12-22 1996-01-16 Sgs-Thomson Microelectronics, Inc. Multiple clocked dynamic sense amplifier
US5306970A (en) * 1992-12-23 1994-04-26 Northern Telecom Limited Sense amplifier and method for its operation
KR100256120B1 (ko) * 1993-09-22 2000-05-15 김영환 고속 감지 증폭기
KR960009953B1 (ko) * 1994-01-27 1996-07-25 삼성전자 주식회사 반도체 메모리 장치의 센스앰프 제어회로
US5729160A (en) * 1994-07-20 1998-03-17 Mosaid Technologies Incorporated Self-timed circuit control device and method
US5504443A (en) * 1994-09-07 1996-04-02 Cypress Semiconductor Corp. Differential latch sense amlifiers using feedback
FR2735630B1 (fr) * 1995-06-19 1997-08-14 Matra Mhs Amplificateur de ligne pour memoire statique ram
US5568438A (en) * 1995-07-18 1996-10-22 Analog Devices, Inc. Sense amplifier with offset autonulling
EP0768758B1 (en) * 1995-10-12 2004-01-02 STMicroelectronics S.r.l. Low-consumption and high-density D flip-flop circuit implementation, particularly for standard cell libraries
JP2845264B2 (ja) * 1996-08-28 1999-01-13 日本電気株式会社 セルフカットオフ型センスアンプ回路
US5982673A (en) * 1997-09-30 1999-11-09 Siemens Aktiengesellschaft Secondary sense amplifier with window discriminator for self-timed operation
JP3510507B2 (ja) * 1998-11-27 2004-03-29 Ｎｅｃマイクロシステム株式会社 ラッチ回路
JP2001101872A (ja) * 1999-09-30 2001-04-13 Mitsubishi Electric Corp 増幅回路
KR100366626B1 (ko) * 2000-08-14 2003-01-09 삼성전자 주식회사 부정합에 둔감한 듀티사이클 검출회로
US6300816B1 (en) * 2000-10-24 2001-10-09 Rosun Technologies, Inc. Feedforward-controlled sense amplifier
US6700415B2 (en) * 2001-06-07 2004-03-02 Atmel Corporation Sense amplifier with configurable voltage swing control
US6518798B2 (en) * 2001-06-07 2003-02-11 Atmel Corporation Sense amplifier with improved latching
US6882200B2 (en) * 2001-07-23 2005-04-19 Intel Corporation Controlling signal states and leakage current during a sleep mode
US6476645B1 (en) * 2001-08-10 2002-11-05 Hewlett-Packard Company Method and apparatus for mitigating the history effect in a silicon-on-insulator (SOI)-based circuit
KR100560660B1 (ko) * 2003-03-28 2006-03-16 삼성전자주식회사 듀티 사이클 보정을 위한 장치 및 방법
DE10350337A1 (de) * 2003-10-29 2005-06-16 Infineon Technologies Ag Booster-Schaltung
KR100673903B1 (ko) * 2005-04-30 2007-01-25 주식회사 하이닉스반도체 비트라인 오버 드라이빙 스킴을 가진 반도체 메모리 소자 및 그의 비트라인 감지증폭기 구동방법
KR20130123934A (ko) * 2012-05-04 2013-11-13 에스케이하이닉스 주식회사 입출력센스앰프 및 이를 포함하는 반도체 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2460146C3 (de) * 1974-12-19 1981-11-05 Ibm Deutschland Gmbh, 7000 Stuttgart Bipolare Leseschaltung für integrierte Speichermatrix
US4456841A (en) * 1982-02-05 1984-06-26 International Business Machines Corporation Field effect level sensitive circuit
US4727519A (en) * 1985-11-25 1988-02-23 Motorola, Inc. Memory device including a clock generator with process tracking
US4823031A (en) * 1988-02-01 1989-04-18 Texas Instruments Incorporated Single-ended sense amplifier with positive feedback

Also Published As

Publication number Publication date
IT8968155A1 (it) 1991-06-22
EP0434090A1 (en) 1991-06-26
EP0434090B1 (en) 1995-04-26
DE69018948D1 (de) 1995-06-01
IT1238022B (it) 1993-06-23
CA2033020C (en) 1996-01-30
CA2033020A1 (en) 1991-06-23
DE434090T1 (de) 1991-11-28
DE69018948T2 (de) 1995-09-28
US5155397A (en) 1992-10-13

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971124