IT9067073A0 - Dispositivo laser a semiconduttore e procedimento per la produzione dello stesso. - Google Patents

Dispositivo laser a semiconduttore e procedimento per la produzione dello stesso.

Info

Publication number
IT9067073A0
IT9067073A0 IT9067073A IT6707390A IT9067073A0 IT 9067073 A0 IT9067073 A0 IT 9067073A0 IT 9067073 A IT9067073 A IT 9067073A IT 6707390 A IT6707390 A IT 6707390A IT 9067073 A0 IT9067073 A0 IT 9067073A0
Authority
IT
Italy
Prior art keywords
procedure
production
semiconductor laser
laser device
semiconductor
Prior art date
Application number
IT9067073A
Other languages
English (en)
Other versions
IT9067073A1 (it
IT1240232B (it
Inventor
Okada Masato
Kohno Masaki
Yagi Tetsuya
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of IT9067073A0 publication Critical patent/IT9067073A0/it
Publication of IT9067073A1 publication Critical patent/IT9067073A1/it
Application granted granted Critical
Publication of IT1240232B publication Critical patent/IT1240232B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
IT67073A 1989-02-01 1990-01-31 Dispositivo laser a semiconduttore e procedimento per la produzione dello stesso. IT1240232B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1024452A JP2686306B2 (ja) 1989-02-01 1989-02-01 半導体レーザ装置とその製造方法

Publications (3)

Publication Number Publication Date
IT9067073A0 true IT9067073A0 (it) 1990-01-31
IT9067073A1 IT9067073A1 (it) 1990-08-02
IT1240232B IT1240232B (it) 1993-11-27

Family

ID=12138551

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67073A IT1240232B (it) 1989-02-01 1990-01-31 Dispositivo laser a semiconduttore e procedimento per la produzione dello stesso.

Country Status (4)

Country Link
US (1) US5018158A (it)
JP (1) JP2686306B2 (it)
IT (1) IT1240232B (it)
NL (1) NL9000255A (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629621A (ja) * 1992-07-09 1994-02-04 Mitsubishi Electric Corp 半導体レーザ装置
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
JPH07226566A (ja) * 1994-02-10 1995-08-22 Nec Corp 量子井戸半導体レーザおよびその製造方法
JP3950604B2 (ja) * 1999-12-28 2007-08-01 日本オプネクスト株式会社 半導体レーザ装置、半導体レーザアレー装置及び光伝送装置
US6977953B2 (en) * 2001-07-27 2005-12-20 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of fabricating the same
JP2004119817A (ja) * 2002-09-27 2004-04-15 Sharp Corp 半導体レーザ素子およびその製造方法
JP4502867B2 (ja) * 2005-04-12 2010-07-14 パナソニック株式会社 半導体レーザ装置および半導体レーザ装置の製造方法
JP2008091713A (ja) * 2006-10-03 2008-04-17 Matsushita Electric Ind Co Ltd 二波長半導体レーザ装置
WO2017177890A1 (en) 2016-04-12 2017-10-19 Whirlpool Corporation Combination microwave and hood system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154984A (en) * 1978-05-12 1979-12-06 Nec Corp Semiconductor laser device and its manufacture
US4371966A (en) * 1980-11-06 1983-02-01 Xerox Corporation Heterostructure lasers with combination active strip and passive waveguide strip
JPS60101989A (ja) * 1983-11-08 1985-06-06 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ及びその製造方法
JPS6356979A (ja) * 1986-08-27 1988-03-11 Fujitsu Ltd 半導体レーザ
JPH0648742B2 (ja) * 1987-02-09 1994-06-22 日本電気株式会社 半導体レ−ザの製造方法
JPH0648743B2 (ja) * 1987-02-18 1994-06-22 三菱電機株式会社 半導体レ−ザ装置の製造方法
JPS649682A (en) * 1987-07-01 1989-01-12 Nec Corp Distributed feedback semiconductor laser
JPH01235397A (ja) * 1988-03-16 1989-09-20 Mitsubishi Electric Corp 半導体レーザ
GB2222307B (en) * 1988-07-22 1992-04-01 Mitsubishi Electric Corp Semiconductor laser
US4961197A (en) * 1988-09-07 1990-10-02 Hitachi, Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
IT9067073A1 (it) 1990-08-02
JP2686306B2 (ja) 1997-12-08
NL9000255A (nl) 1990-09-03
IT1240232B (it) 1993-11-27
US5018158A (en) 1991-05-21
JPH02203585A (ja) 1990-08-13

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960129