ITMI20011952A0 - Dispositivo a circuito integrato comprendente una regione di pozzso profondo e procedimenti associati - Google Patents

Dispositivo a circuito integrato comprendente una regione di pozzso profondo e procedimenti associati

Info

Publication number
ITMI20011952A0
ITMI20011952A0 IT2001MI001952A ITMI20011952A ITMI20011952A0 IT MI20011952 A0 ITMI20011952 A0 IT MI20011952A0 IT 2001MI001952 A IT2001MI001952 A IT 2001MI001952A IT MI20011952 A ITMI20011952 A IT MI20011952A IT MI20011952 A0 ITMI20011952 A0 IT MI20011952A0
Authority
IT
Italy
Prior art keywords
integrated circuit
device including
circuit device
well region
deep well
Prior art date
Application number
IT2001MI001952A
Other languages
English (en)
Inventor
Christopher Boguslaw Kocon
Original Assignee
Fairchild Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor filed Critical Fairchild Semiconductor
Publication of ITMI20011952A0 publication Critical patent/ITMI20011952A0/it
Publication of ITMI20011952A1 publication Critical patent/ITMI20011952A1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
IT2001MI001952A 2000-09-19 2001-09-18 Dispositivo a circuito integrato comprendente una regione di pozzso profondo e procedimenti associati ITMI20011952A1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/664,024 US6534828B1 (en) 2000-09-19 2000-09-19 Integrated circuit device including a deep well region and associated methods

Publications (2)

Publication Number Publication Date
ITMI20011952A0 true ITMI20011952A0 (it) 2001-09-18
ITMI20011952A1 ITMI20011952A1 (it) 2003-03-18

Family

ID=24664196

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2001MI001952A ITMI20011952A1 (it) 2000-09-19 2001-09-18 Dispositivo a circuito integrato comprendente una regione di pozzso profondo e procedimenti associati

Country Status (7)

Country Link
US (1) US6534828B1 (it)
JP (1) JP2002164542A (it)
DE (1) DE10145045A1 (it)
FR (1) FR2814282A1 (it)
IT (1) ITMI20011952A1 (it)
NL (1) NL1018956C2 (it)
TW (1) TW538533B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW543146B (en) * 2001-03-09 2003-07-21 Fairchild Semiconductor Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge
JP4024503B2 (ja) * 2001-09-19 2007-12-19 株式会社東芝 半導体装置及びその製造方法
US7161208B2 (en) * 2002-05-14 2007-01-09 International Rectifier Corporation Trench mosfet with field relief feature
JP3971327B2 (ja) 2003-03-11 2007-09-05 株式会社東芝 絶縁ゲート型半導体装置
US7279743B2 (en) * 2003-12-02 2007-10-09 Vishay-Siliconix Closed cell trench metal-oxide-semiconductor field effect transistor
TWI222685B (en) * 2003-12-18 2004-10-21 Episil Technologies Inc Metal oxide semiconductor device and fabricating method thereof
GB0403934D0 (en) * 2004-02-21 2004-03-24 Koninkl Philips Electronics Nv Trench-gate semiconductor devices and the manufacture thereof
US7262111B1 (en) * 2004-09-07 2007-08-28 National Semiconductor Corporation Method for providing a deep connection to a substrate or buried layer in a semiconductor device
GB0419867D0 (en) 2004-09-08 2004-10-13 Koninkl Philips Electronics Nv Semiconductor devices and methods of manufacture thereof
US7265415B2 (en) * 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
KR100552827B1 (ko) * 2004-12-22 2006-02-21 동부아남반도체 주식회사 깊은 웰과 게이트 산화막을 동시에 형성하는 고전압반도체 소자의 제조 방법
JP5047805B2 (ja) * 2005-11-22 2012-10-10 新電元工業株式会社 トレンチゲートパワー半導体装置
US8076719B2 (en) * 2008-02-14 2011-12-13 Maxpower Semiconductor, Inc. Semiconductor device structures and related processes
US8704295B1 (en) 2008-02-14 2014-04-22 Maxpower Semiconductor, Inc. Schottky and MOSFET+Schottky structures, devices, and methods
JP6047297B2 (ja) * 2012-04-09 2016-12-21 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3334290B2 (ja) * 1993-11-12 2002-10-15 株式会社デンソー 半導体装置
JP3260944B2 (ja) * 1993-12-15 2002-02-25 三菱電機株式会社 電圧駆動型サイリスタおよびその製造方法
JP3307785B2 (ja) * 1994-12-13 2002-07-24 三菱電機株式会社 絶縁ゲート型半導体装置
US6140678A (en) * 1995-06-02 2000-10-31 Siliconix Incorporated Trench-gated power MOSFET with protective diode
EP0746030B1 (en) * 1995-06-02 2001-11-21 SILICONIX Incorporated Trench-gated power MOSFET with protective diodes in a periodically repeating pattern
DE69631995T2 (de) 1995-06-02 2005-02-10 Siliconix Inc., Santa Clara Bidirektional sperrender Graben-Leistungs-MOSFET
GB2314206A (en) * 1996-06-13 1997-12-17 Plessey Semiconductors Ltd Preventing voltage breakdown in semiconductor devices
JP3904648B2 (ja) * 1997-01-31 2007-04-11 株式会社ルネサステクノロジ 半導体装置
US6096608A (en) * 1997-06-30 2000-08-01 Siliconix Incorporated Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench
US6084264A (en) 1998-11-25 2000-07-04 Siliconix Incorporated Trench MOSFET having improved breakdown and on-resistance characteristics

Also Published As

Publication number Publication date
FR2814282A1 (fr) 2002-03-22
JP2002164542A (ja) 2002-06-07
ITMI20011952A1 (it) 2003-03-18
DE10145045A1 (de) 2002-08-01
TW538533B (en) 2003-06-21
NL1018956C2 (nl) 2004-11-30
US6534828B1 (en) 2003-03-18
NL1018956A1 (nl) 2002-03-21

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