ITMI20041760A1 - Condensatore di bypass su chip e procedimento di fabbricazione del medesimo - Google Patents

Condensatore di bypass su chip e procedimento di fabbricazione del medesimo

Info

Publication number
ITMI20041760A1
ITMI20041760A1 IT001760A ITMI20041760A ITMI20041760A1 IT MI20041760 A1 ITMI20041760 A1 IT MI20041760A1 IT 001760 A IT001760 A IT 001760A IT MI20041760 A ITMI20041760 A IT MI20041760A IT MI20041760 A1 ITMI20041760 A1 IT MI20041760A1
Authority
IT
Italy
Prior art keywords
chip
capacitor
manufacturing procedure
same manufacturing
bypass condenser
Prior art date
Application number
IT001760A
Other languages
English (en)
Inventor
Dae-Hwan Kim
Jung-Hwa Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI20041760A1 publication Critical patent/ITMI20041760A1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT001760A 2003-09-23 2004-09-15 Condensatore di bypass su chip e procedimento di fabbricazione del medesimo ITMI20041760A1 (it)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20030066397 2003-09-23
US10/864,509 US7177135B2 (en) 2003-09-23 2004-06-10 On-chip bypass capacitor and method of manufacturing the same
KR1020040068755A KR100568450B1 (ko) 2003-09-23 2004-08-30 온칩 바이패스 캐패시터 및 그 제조 방법

Publications (1)

Publication Number Publication Date
ITMI20041760A1 true ITMI20041760A1 (it) 2004-12-15

Family

ID=34309527

Family Applications (1)

Application Number Title Priority Date Filing Date
IT001760A ITMI20041760A1 (it) 2003-09-23 2004-09-15 Condensatore di bypass su chip e procedimento di fabbricazione del medesimo

Country Status (3)

Country Link
US (2) US7177135B2 (it)
KR (1) KR100568450B1 (it)
IT (1) ITMI20041760A1 (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1863090A1 (en) * 2006-06-01 2007-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20090014832A1 (en) * 2007-07-09 2009-01-15 Peter Baumgartner Semiconductor Device with Reduced Capacitance Tolerance Value
EP2272094A2 (en) * 2008-04-01 2011-01-12 ST-Ericsson SA An integrated circuit
US8416609B2 (en) 2010-02-15 2013-04-09 Micron Technology, Inc. Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
US8437174B2 (en) * 2010-02-15 2013-05-07 Micron Technology, Inc. Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming
US8634224B2 (en) 2010-08-12 2014-01-21 Micron Technology, Inc. Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell
KR101863762B1 (ko) * 2011-12-20 2018-07-16 에스케이하이닉스 주식회사 리저브아 캐패시터를 갖는 반도체 집적 회로 장치
US8610188B2 (en) * 2011-09-15 2013-12-17 GlobalFoundries, Inc. Integrated circuit decoupling capacitor arrangement
US8780628B2 (en) * 2011-09-23 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit including a voltage divider and methods of operating the same
US9818817B2 (en) * 2013-02-12 2017-11-14 Qualcomm Incorporated Metal-insulator-metal capacitor over conductive layer
KR20170021563A (ko) * 2015-08-18 2017-02-28 에스케이하이닉스 주식회사 대용량 캐패시터를 구비하는 반도체 집적 회로 장치
US10446487B2 (en) * 2016-09-30 2019-10-15 Invensas Bonding Technologies, Inc. Interface structures and methods for forming same
US10629577B2 (en) 2017-03-16 2020-04-21 Invensas Corporation Direct-bonded LED arrays and applications
US11011503B2 (en) 2017-12-15 2021-05-18 Invensas Bonding Technologies, Inc. Direct-bonded optoelectronic interconnect for high-density integrated photonics
US11169326B2 (en) 2018-02-26 2021-11-09 Invensas Bonding Technologies, Inc. Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects
US11256004B2 (en) 2018-03-20 2022-02-22 Invensas Bonding Technologies, Inc. Direct-bonded lamination for improved image clarity in optical devices
US11515291B2 (en) 2018-08-28 2022-11-29 Adeia Semiconductor Inc. Integrated voltage regulator and passive components
US11762200B2 (en) 2019-12-17 2023-09-19 Adeia Semiconductor Bonding Technologies Inc. Bonded optical devices
KR102819686B1 (ko) * 2020-04-16 2025-06-12 에스케이하이닉스 주식회사 디커플링 캐패시터를 포함하는 반도체 패키지
US20230124931A1 (en) * 2021-10-20 2023-04-20 Empower Semiconductor, Inc. Configurable capacitor

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4392210A (en) * 1978-08-28 1983-07-05 Mostek Corporation One transistor-one capacitor memory cell
US4649468A (en) 1985-11-06 1987-03-10 At&T Information Systems Inc. Voltage divider circuit
EP0480411A1 (en) * 1990-10-10 1992-04-15 Micron Technology, Inc. Stacked capacitor DRAM
US5236855A (en) * 1990-11-06 1993-08-17 Micron Technology, Inc. Stacked V-cell capacitor using a disposable outer digit line spacer
US5410504A (en) * 1994-05-03 1995-04-25 Ward; Calvin B. Memory based on arrays of capacitors
JP3406127B2 (ja) * 1995-09-04 2003-05-12 三菱電機株式会社 半導体装置
KR0183739B1 (ko) * 1995-09-19 1999-03-20 김광호 감결합 커패시터를 포함하는 반도체 장치 및 그 제조방법
US5739576A (en) * 1995-10-06 1998-04-14 Micron Technology, Inc. Integrated chip multilayer decoupling capacitors
JPH1012838A (ja) * 1996-06-21 1998-01-16 Mitsubishi Electric Corp 半導体装置
JPH1098313A (ja) 1996-09-24 1998-04-14 Kokusai Electric Co Ltd 高速同調フィルタ
KR19980035297A (ko) 1996-11-13 1998-08-05 김영환 셀 커패시터로 구현된 온-칩 디커플링 커패시터가 있는 메모리 소자 및 그 제조 방법
US5822258A (en) * 1997-05-05 1998-10-13 Micron Technology, Inc. Circuit and method for testing a memory device with a cell plate generator having a variable current
US6324048B1 (en) * 1998-03-04 2001-11-27 Avx Corporation Ultra-small capacitor array
US6093614A (en) * 1998-03-04 2000-07-25 Siemens Aktiengesellschaft Memory cell structure and fabrication
JP4390305B2 (ja) * 1999-01-04 2009-12-24 株式会社ルネサステクノロジ 半導体装置
KR100564422B1 (ko) 1999-04-22 2006-03-28 주식회사 하이닉스반도체 Ｍｍｌ반도체소자의 디커플링 커패시터 및 그 형성방법
US6204723B1 (en) * 1999-04-29 2001-03-20 International Business Machines Corporation Bias circuit for series connected decoupling capacitors
US6515559B1 (en) * 1999-07-22 2003-02-04 Matsushita Electric Industrial Co., Ltd In-band-flat-group-delay type dielectric filter and linearized amplifier using the same
JP3578673B2 (ja) 1999-08-05 2004-10-20 松下電器産業株式会社 誘電体積層フィルタおよびその製造方法
JP2001160727A (ja) 1999-12-01 2001-06-12 Nec Niigata Ltd 回路基板
US7030481B2 (en) * 2002-12-09 2006-04-18 Internation Business Machines Corporation High density chip carrier with integrated passive devices

Also Published As

Publication number Publication date
KR20050030105A (ko) 2005-03-29
KR100568450B1 (ko) 2006-04-07
US7177135B2 (en) 2007-02-13
US20050063134A1 (en) 2005-03-24
US20070079488A1 (en) 2007-04-12
US7655518B2 (en) 2010-02-02

Similar Documents

Publication Publication Date Title
TW200623395A (en) Stacked semiconductor memory device
WO2008102650A1 (ja) 半導体記憶装置
DE602005022053D1 (de) Austauschbare verbindungs-arrays für doppelseitige dimm-plazierung
EP1308958A3 (en) Three dimensional large storage random access memory device
EP1255303A4 (en) LIGHT EMITTING OR RECEIVING SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING SAME
EP1262996A4 (en) INTEGRATED SEMICONDUCTOR CIRCUIT ELEMENT
FR2880989B1 (fr) Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
TW200620633A (en) Stacked semiconductor memory device
TW200624842A (en) Structure and method for failure analysis in a semiconductor device
ATE523881T1 (de) Verfahren bei der herstellung eines ferroelektrischen speicherbausteins
WO2006009849A3 (en) Staggered memory cell array
WO2009070391A3 (en) Semiconductor constructions, methods of forming capacitors, and methods of forming dram arrays
EP1681717A4 (en) ELECTRONIC DEVICE AND PROCESS FOR THEIR MANUFACTURE
DE602004000514D1 (de) Doppelwerkzeug ohne Elastomer, mit hohem Expandiervermögen
DE60036813D1 (de) Schaltung und verfahren für ein multiplexredundanzschema in einer speicheranordnung
EP1376599A3 (en) Magnetic memory device having XP Cell and STR Cell in one Chip
EP1724829A3 (en) Semiconductor device
EP1349174A3 (en) Memory embedded logic integrated circuit mounting memory circuits having different performances on the same chip
TW200715537A (en) Non-volatile memory cell and integrated circuit
DE50304758D1 (de) Chipkondensator und verfahren zu dessen herstellung
TW200601332A (en) Shared decoupling capacitance
EP1630728A4 (en) RADIO RECOGNITION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
WO2004097835A3 (en) Nonvolatile memory structure with high speed high bandwidth and low voltage
DE60323847D1 (de) Programmierbare pipeline-matrix mit teilweise globalen konfigurationsbussen
WO2007092536A3 (en) Memory array segmentation and methods