ITMI20042074A1 - Amplificatore di lettura in corrente per applicazioni a bassa tensione con sensing diretto sulla bitline di una matrice di memoria - Google Patents

Amplificatore di lettura in corrente per applicazioni a bassa tensione con sensing diretto sulla bitline di una matrice di memoria

Info

Publication number
ITMI20042074A1
ITMI20042074A1 IT002074A ITMI20042074A ITMI20042074A1 IT MI20042074 A1 ITMI20042074 A1 IT MI20042074A1 IT 002074 A IT002074 A IT 002074A IT MI20042074 A ITMI20042074 A IT MI20042074A IT MI20042074 A1 ITMI20042074 A1 IT MI20042074A1
Authority
IT
Italy
Prior art keywords
bitline
low voltage
current reading
memory matrix
voltage applications
Prior art date
Application number
IT002074A
Other languages
English (en)
Inventor
Alberto Taddeo
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT002074A priority Critical patent/ITMI20042074A1/it
Publication of ITMI20042074A1 publication Critical patent/ITMI20042074A1/it
Priority to US11/261,901 priority patent/US7272062B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers
IT002074A 2004-10-29 2004-10-29 Amplificatore di lettura in corrente per applicazioni a bassa tensione con sensing diretto sulla bitline di una matrice di memoria ITMI20042074A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT002074A ITMI20042074A1 (it) 2004-10-29 2004-10-29 Amplificatore di lettura in corrente per applicazioni a bassa tensione con sensing diretto sulla bitline di una matrice di memoria
US11/261,901 US7272062B2 (en) 2004-10-29 2005-10-28 Current sense amplifier for low voltage applications with direct sensing on the bitline of a memory matrix

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT002074A ITMI20042074A1 (it) 2004-10-29 2004-10-29 Amplificatore di lettura in corrente per applicazioni a bassa tensione con sensing diretto sulla bitline di una matrice di memoria

Publications (1)

Publication Number Publication Date
ITMI20042074A1 true ITMI20042074A1 (it) 2005-01-29

Family

ID=36683717

Family Applications (1)

Application Number Title Priority Date Filing Date
IT002074A ITMI20042074A1 (it) 2004-10-29 2004-10-29 Amplificatore di lettura in corrente per applicazioni a bassa tensione con sensing diretto sulla bitline di una matrice di memoria

Country Status (2)

Country Link
US (1) US7272062B2 (it)
IT (1) ITMI20042074A1 (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7522463B2 (en) 2007-01-12 2009-04-21 Atmel Corporation Sense amplifier with stages to reduce capacitance mismatch in current mirror load
US7489574B2 (en) * 2007-06-15 2009-02-10 Ememory Technology Inc. Sensing circuit for memories
KR100904467B1 (ko) * 2008-01-09 2009-06-24 주식회사 하이닉스반도체 펌핑전압 감지회로
US7813201B2 (en) * 2008-07-08 2010-10-12 Atmel Corporation Differential sense amplifier
JP5112208B2 (ja) * 2008-07-18 2013-01-09 ルネサスエレクトロニクス株式会社 レギュレータ及び半導体装置
CN102132575B (zh) * 2008-08-29 2013-10-02 索尼电脑娱乐公司 信息处理系统及信息处理装置
CN102005243B (zh) * 2009-08-31 2014-02-05 中芯国际集成电路制造(上海)有限公司 差分闪存器件及提高差分闪存器件耐久性的方法
CN102024496B (zh) * 2009-09-11 2013-12-04 中芯国际集成电路制造(上海)有限公司 闪存系统及其逻辑状态读取方法和编程方法
US20120033509A1 (en) * 2010-08-09 2012-02-09 Paolo Menegoli Memory data reading and writing technique
US8331164B2 (en) * 2010-12-06 2012-12-11 International Business Machines Corporation Compact low-power asynchronous resistor-based memory read operation and circuit
US8274828B2 (en) * 2010-12-15 2012-09-25 Fs Semiconductor Corp., Ltd. Structures and methods for reading out non-volatile memory using referencing cells
ITMI20131060A1 (it) 2013-06-26 2014-12-27 St Microelectronics Srl Dispositivo di memoria non-volatile con circuito di lettura migliorato
US9362293B2 (en) 2013-12-20 2016-06-07 Cypress Semiconductor Corporation CT-NOR differential bitline sensing architecture
US9589604B1 (en) 2015-09-17 2017-03-07 International Business Machines Corporation Single ended bitline current sense amplifier for SRAM applications
US11127449B2 (en) * 2018-04-25 2021-09-21 Micron Technology, Inc. Sensing a memory cell
DE102020120890A1 (de) 2019-10-30 2021-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur für mehrere leseverstärker einer speichervorrichtung
US11450357B2 (en) * 2019-10-30 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Structure for multiple sense amplifiers of memory device
CN116230034B (zh) * 2021-12-06 2026-02-06 北京超弦存储器研究院 一种应用于mram中的放大电路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100300549B1 (ko) * 1999-06-16 2001-11-01 김영환 비휘발성 메모리 센싱장치 및 방법
US6791879B1 (en) * 2002-09-23 2004-09-14 Summit Microelectronics, Inc. Structure and method for programmable and non-volatile analog signal storage for a precision voltage reference
US7020036B2 (en) * 2004-08-26 2006-03-28 Ememory Technology Inc. Memory unit with sensing current stabilization
JP4522217B2 (ja) * 2004-10-15 2010-08-11 パナソニック株式会社 不揮発性半導体メモリ

Also Published As

Publication number Publication date
US20060158946A1 (en) 2006-07-20
US7272062B2 (en) 2007-09-18

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