ITMI20051901A1 - Processo di fabbricazione di tramsistori a film sottile in materiale organico e transistore - Google Patents

Processo di fabbricazione di tramsistori a film sottile in materiale organico e transistore

Info

Publication number
ITMI20051901A1
ITMI20051901A1 IT001901A ITMI20051901A ITMI20051901A1 IT MI20051901 A1 ITMI20051901 A1 IT MI20051901A1 IT 001901 A IT001901 A IT 001901A IT MI20051901 A ITMI20051901 A IT MI20051901A IT MI20051901 A1 ITMI20051901 A1 IT MI20051901A1
Authority
IT
Italy
Prior art keywords
transistor
manufacture
thin film
organic material
film transistors
Prior art date
Application number
IT001901A
Other languages
English (en)
Inventor
Roberta Cuozzo
Anna Morra
Teresa Napolitano
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT001901A priority Critical patent/ITMI20051901A1/it
Priority to US11/538,390 priority patent/US7598116B2/en
Publication of ITMI20051901A1 publication Critical patent/ITMI20051901A1/it
Priority to US12/478,475 priority patent/US8653505B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
IT001901A 2005-10-10 2005-10-10 Processo di fabbricazione di tramsistori a film sottile in materiale organico e transistore ITMI20051901A1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT001901A ITMI20051901A1 (it) 2005-10-10 2005-10-10 Processo di fabbricazione di tramsistori a film sottile in materiale organico e transistore
US11/538,390 US7598116B2 (en) 2005-10-10 2006-10-03 Organic thin film transistor and process for manufacturing same
US12/478,475 US8653505B2 (en) 2005-10-10 2009-06-04 Organic thin film transistor and process for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT001901A ITMI20051901A1 (it) 2005-10-10 2005-10-10 Processo di fabbricazione di tramsistori a film sottile in materiale organico e transistore

Publications (1)

Publication Number Publication Date
ITMI20051901A1 true ITMI20051901A1 (it) 2007-04-11

Family

ID=38042866

Family Applications (1)

Application Number Title Priority Date Filing Date
IT001901A ITMI20051901A1 (it) 2005-10-10 2005-10-10 Processo di fabbricazione di tramsistori a film sottile in materiale organico e transistore

Country Status (2)

Country Link
US (2) US7598116B2 (it)
IT (1) ITMI20051901A1 (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101098560B1 (ko) * 2009-09-16 2011-12-26 한국과학기술원 플렉서블 소자 제조방법 및 이에 의하여 제조된 플렉서블 소자
US8216939B2 (en) * 2010-08-20 2012-07-10 Micron Technology, Inc. Methods of forming openings
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
TWI628803B (zh) * 2017-09-15 2018-07-01 友達光電股份有限公司 有機薄膜電晶體元件及其製作方法
US10832963B2 (en) 2018-08-27 2020-11-10 International Business Machines Corporation Forming gate contact over active free of metal recess

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61256671A (ja) * 1985-05-09 1986-11-14 Fujitsu Ltd 薄膜トランジスタの製造方法
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
AU2015901A (en) * 1999-12-21 2001-07-03 Plastic Logic Limited Inkjet-fabricated integrated circuits
CN1423841A (zh) * 2000-12-21 2003-06-11 皇家菲利浦电子有限公司 薄膜晶体管
DE10160732A1 (de) * 2001-12-11 2003-06-26 Siemens Ag Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu
US6740900B2 (en) * 2002-02-27 2004-05-25 Konica Corporation Organic thin-film transistor and manufacturing method for the same
GB0229191D0 (en) * 2002-12-14 2003-01-22 Plastic Logic Ltd Embossing of polymer devices
WO2005006449A1 (ja) * 2003-07-10 2005-01-20 Matsushita Electric Industrial Co., Ltd. 有機薄膜トランジスタとその製造方法、及びそれを用いたアクティブマトリクス型のディスプレイと無線識別タグ
JP4325479B2 (ja) * 2003-07-17 2009-09-02 セイコーエプソン株式会社 有機トランジスタの製造方法、アクティブマトリクス装置の製造方法、表示装置の製造方法および電子機器の製造方法
US6867081B2 (en) * 2003-07-31 2005-03-15 Hewlett-Packard Development Company, L.P. Solution-processed thin film transistor formation method
DE602004006283T2 (de) * 2003-09-02 2007-12-27 Plastic Logic Ltd., Milton Road Herstellung elektronischer bauelemente
GB0320491D0 (en) * 2003-09-02 2003-10-01 Plastic Logic Ltd Multi-level patterning
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
US7514710B2 (en) * 2005-12-28 2009-04-07 3M Innovative Properties Company Bottom gate thin film transistors

Also Published As

Publication number Publication date
US7598116B2 (en) 2009-10-06
US20070105268A1 (en) 2007-05-10
US8653505B2 (en) 2014-02-18
US20090236593A1 (en) 2009-09-24

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