ITMI20091373A1 - Dispositivo micromeccanico con caverne con pressione interna dell'atmosfera differente - Google Patents

Dispositivo micromeccanico con caverne con pressione interna dell'atmosfera differente

Info

Publication number
ITMI20091373A1
ITMI20091373A1 IT001373A ITMI20091373A ITMI20091373A1 IT MI20091373 A1 ITMI20091373 A1 IT MI20091373A1 IT 001373 A IT001373 A IT 001373A IT MI20091373 A ITMI20091373 A IT MI20091373A IT MI20091373 A1 ITMI20091373 A1 IT MI20091373A1
Authority
IT
Italy
Prior art keywords
caverns
micro
internal pressure
mechanical device
different atmosphere
Prior art date
Application number
IT001373A
Other languages
English (en)
Inventor
Julian Gonska
Ralf Hausner
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of ITMI20091373A1 publication Critical patent/ITMI20091373A1/it
Application granted granted Critical
Publication of IT1398280B1 publication Critical patent/IT1398280B1/it

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems ; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/025—Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0136—Growing or depositing of a covering layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0145—Hermetically sealing an opening in the lid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24744—Longitudinal or transverse tubular cavity or cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
ITMI2009A001373A 2008-08-04 2009-07-30 Dispositivo micromeccanico con caverne con pressione interna dell'atmosfera differente IT1398280B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008040970A DE102008040970A1 (de) 2008-08-04 2008-08-04 Mikromechanische Vorrichtung mit Kavernen mit unterschiedlichem atmosphärischen Innendruck

Publications (2)

Publication Number Publication Date
ITMI20091373A1 true ITMI20091373A1 (it) 2010-02-05
IT1398280B1 IT1398280B1 (it) 2013-02-22

Family

ID=41501357

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI2009A001373A IT1398280B1 (it) 2008-08-04 2009-07-30 Dispositivo micromeccanico con caverne con pressione interna dell'atmosfera differente

Country Status (4)

Country Link
US (1) US8035209B2 (it)
CN (1) CN101643193B (it)
DE (1) DE102008040970A1 (it)
IT (1) IT1398280B1 (it)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009002068A1 (de) * 2009-04-01 2010-10-07 Robert Bosch Gmbh Dämpfungsvorrichtung
US7997143B2 (en) 2009-04-09 2011-08-16 Kulite Semiconductor Products, Inc. Internally switched multiple range transducer
DE102009029180B4 (de) * 2009-09-03 2017-07-20 Robert Bosch Gmbh Mikrosystem
JP5298047B2 (ja) * 2010-02-26 2013-09-25 日立オートモティブシステムズ株式会社 複合センサの製造方法
CN102320549B (zh) * 2011-07-28 2014-05-28 北京大学 一种提高薄膜应变线性度的方法
DE102011081033B4 (de) * 2011-08-16 2022-02-17 Robert Bosch Gmbh Verfahren zur Herstellung einer mikromechanischen Struktur und mikromechanische Struktur
DE102011085727A1 (de) * 2011-11-03 2013-05-08 Continental Teves Ag & Co. Ohg Mikromechanisches Element, Bauelement mit einem mikromechanischen Element und Verfahren zum Herstellen eines Bauelements
DE102011085723A1 (de) 2011-11-03 2013-05-08 Continental Teves Ag & Co. Ohg Bauelement und Verfahren zur Herstellung eines Bauelements
SE537584C2 (sv) * 2011-12-15 2015-06-30 Silex Microsystems Ab Tunnfilmskapsling
JP2013232626A (ja) * 2012-04-04 2013-11-14 Seiko Epson Corp 電子デバイス及びその製造方法、電子機器、並びに移動体
DE102012209973B4 (de) * 2012-06-14 2024-03-07 Robert Bosch Gmbh Mikromechanische Vorrichtung und Verfahren zur Herstellung einer mikromechanischen Vorrichtung
US8952465B2 (en) * 2012-07-13 2015-02-10 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS devices, packaged MEMS devices, and methods of manufacture thereof
DE102013014881B4 (de) * 2012-09-12 2023-05-04 Fairchild Semiconductor Corporation Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien
DE102012219605B4 (de) 2012-10-26 2021-09-23 Robert Bosch Gmbh Mikromechanisches Bauelement
US9174838B2 (en) * 2012-12-10 2015-11-03 MCube Inc. Distributed MEMS devices time synchronization methods and system
US8916943B2 (en) * 2013-03-01 2014-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS devices having a plurality of cavities
DE102013208814A1 (de) * 2013-05-14 2014-11-20 Robert Bosch Gmbh Integrierter Drehraten- und Beschleunigungssensor und Verfahren zur Herstellung eines integrierten Drehraten- und Beschleunigungssensor
ITTO20130651A1 (it) * 2013-07-31 2015-02-01 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo incapsulato, in particolare un sensore micro-elettro-meccanico incapsulato, dotato di una struttura accessibile, quale un microfono mems e dispositivo incapsulato cosi' ottenuto
US9090454B2 (en) 2013-08-27 2015-07-28 Freescale Semiconductor, Inc. Sequential wafer bonding
US9481564B2 (en) 2013-08-29 2016-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of sealing and shielding for dual pressure MEMs devices
CN103434998B (zh) * 2013-08-29 2016-04-20 上海华虹宏力半导体制造有限公司 晶圆级气密性的测试结构及测试方法
US9102512B2 (en) 2013-10-04 2015-08-11 Analog Devices, Inc. Sealed MEMS devices with multiple chamber pressures
US9676611B2 (en) 2013-10-18 2017-06-13 Nxp Usa, Inc. Sensor device packages and related fabrication methods
DE102014204035B4 (de) 2013-11-06 2024-10-10 Robert Bosch Gmbh Hybrid integriertes Bauteil mit definiert vorgegebenen Innendruck im MEM Hohlraum und Verfahren zu dessen Herstellung
DE102013222517A1 (de) * 2013-11-06 2015-05-07 Robert Bosch Gmbh Mikromechanische Sensoreinheit und Verfahren zur Herstellung von mikromechanischen Sensoreinheiten
US20150143926A1 (en) 2013-11-23 2015-05-28 Silicon Microstructures, Inc. Area-efficient pressure sensing device
EP3077325B1 (en) * 2013-12-06 2018-03-21 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Method for packaging a microelectronic device in a hermetically sealed cavity and managing the atmosphere of the cavity with a dedicated hole
US9018029B1 (en) 2013-12-06 2015-04-28 Freescale Semiconductor, Inc. Vent hole sealing in multiple die sensor device
US9352956B2 (en) 2014-01-16 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS devices and methods for forming same
CN104803343B (zh) * 2014-01-28 2016-09-14 立锜科技股份有限公司 复合微机电系统芯片及其制作方法
DE102014202801B4 (de) * 2014-02-17 2023-08-24 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Bauelements
CN103818868B (zh) * 2014-02-22 2015-10-28 安徽北方芯动联科微系统技术有限公司 双压力mems芯片圆片级封装方法及其双压力mems芯片
US9108841B1 (en) 2014-03-05 2015-08-18 Freescale Semiconductor, Inc. Microelectronic packages having stacked accelerometer and magnetometer die and methods for the production thereof
DE102014204666A1 (de) 2014-03-13 2015-09-17 Robert Bosch Gmbh Vorrichtung zum Reduzieren eines (Partial-)Drucks zumindest einer chemischen Spezies in einer abgeschlossenen Kavität, Bauelement und Verfahren zum Herstellen des Bauelements
JP6314568B2 (ja) * 2014-03-18 2018-04-25 セイコーエプソン株式会社 Ｍｅｍｓデバイス及びその製造方法
US9499397B2 (en) 2014-03-31 2016-11-22 Freescale Semiconductor, Inc. Microelectronic packages having axially-partitioned hermetic cavities and methods for the fabrication thereof
US10442685B2 (en) 2014-03-31 2019-10-15 Nxp Usa, Inc. Microelectronic packages having hermetic cavities and methods for the production thereof
FR3021645B1 (fr) 2014-06-03 2019-06-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure d'encapsulation a plusieurs cavites munies de canaux d'acces de hauteurs differentes
GB2543443B (en) * 2014-06-10 2017-09-13 Cirrus Logic Int Semiconductor Ltd Packaging for MEMS transducers
DE102014214525B4 (de) * 2014-07-24 2019-11-14 Robert Bosch Gmbh Mikro-elektromechanisches Bauteil und Herstellungsverfahren für mikro-elektromechanische Bauteile
US9891244B2 (en) 2014-08-15 2018-02-13 Nxp Usa, Inc. Microelectronic packages having split gyroscope structures and methods for the fabrication thereof
US9656857B2 (en) 2014-11-07 2017-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Microelectromechanical systems (MEMS) devices at different pressures
TWI610406B (zh) * 2015-02-09 2018-01-01 精材科技股份有限公司 晶片封裝體與其製備方法
US9567210B2 (en) 2015-02-24 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-pressure MEMS package
US20170088417A1 (en) * 2015-09-29 2017-03-30 Xintec Inc. Electronic device and manufacturing method thereof
DE102015220890B4 (de) * 2015-10-26 2026-04-23 Robert Bosch Gmbh Strukturen und Prozess zur Vermeidung eines Überstandes der Laser-reseal-Struktur über die Waferoberfläche
CN105424236B (zh) * 2015-11-19 2017-08-25 南京信息工程大学 一种多量程阵列式压力传感芯片及其检测方法
DE102015224520A1 (de) * 2015-12-08 2017-06-08 Robert Bosch Gmbh Laserverschluss mit spezieller Membranstruktur
DE102015224545A1 (de) 2015-12-08 2017-06-08 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanisches Bauelements
DE102016200497A1 (de) * 2016-01-15 2017-07-20 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Bauelements
US20170240418A1 (en) * 2016-02-18 2017-08-24 Knowles Electronics, Llc Low-cost miniature mems vibration sensor
DE102016221055A1 (de) * 2016-10-26 2018-04-26 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Bauelements
DE102017213351B4 (de) 2017-08-02 2026-07-02 Robert Bosch Gmbh Sensorvorrichtung und Herstellungsverfahren für eine Sensorvorrichtung mit zumindest einer chemischen oder elektrochemischen Detektiereinrichtung
DE102017218635B4 (de) 2017-10-18 2021-03-18 Infineon Technologies Ag Verfahren zum Verschließen einer Zugangsöffnung zu einer Kavität und MEMS-Bauelement mit einem Verschlusselement
US10961114B2 (en) * 2019-05-30 2021-03-30 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method for the same
CN112265956B (zh) * 2020-09-25 2023-07-28 华东光电集成器件研究所 一种不同真空度封装的mems圆片级真空封装方法
US20240230521A9 (en) * 2021-03-04 2024-07-11 Hahn-Schickard-Gesellschaft Für Angewandte Forschung E. V. Method for enclosing reference gases in mems cells
JP7783727B2 (ja) * 2021-11-30 2025-12-10 ローム株式会社 Ｍｅｍｓセンサ及びｍｅｍｓセンサの製造方法
CN115285927A (zh) * 2022-07-12 2022-11-04 罕王微电子（辽宁）有限公司 一种mems芯片用cvd密封多层真空腔结构及工艺
CN119430072B (zh) * 2024-11-20 2026-01-27 苏州园芯微电子技术有限公司 集成mems芯片及其制造方法
CN120483036B (zh) * 2025-07-18 2025-11-14 武汉衡惯科技发展有限公司 一种晶圆级封装mems惯性器件的制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69925837T2 (de) * 1999-10-29 2005-10-27 Sensonor Asa Mikromechanischer Sensor
JP3435665B2 (ja) * 2000-06-23 2003-08-11 株式会社村田製作所 複合センサ素子およびその製造方法
DE102004027501A1 (de) * 2004-06-04 2005-12-22 Robert Bosch Gmbh Mikromechanisches Bauelement mit mehreren Kavernen und Herstellungsverfahren
DE102006016260B4 (de) * 2006-04-06 2024-07-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vielfach-Bauelement mit mehreren aktive Strukturen enthaltenden Bauteilen (MEMS) zum späteren Vereinzeln, flächiges Substrat oder flächig ausgebildete Kappenstruktur, in der Mikrosystemtechnik einsetzbares Bauteil mit aktiven Strukturen, Einzelsubstrat oder Kappenstruktur mit aktiven Strukturen und Verfahren zum Herstellen eines Vielfach-Bauelements

Also Published As

Publication number Publication date
CN101643193B (zh) 2014-12-31
US8035209B2 (en) 2011-10-11
US20100028618A1 (en) 2010-02-04
DE102008040970A1 (de) 2010-02-11
IT1398280B1 (it) 2013-02-22
CN101643193A (zh) 2010-02-10

Similar Documents

Publication Publication Date Title
IT1398280B1 (it) Dispositivo micromeccanico con caverne con pressione interna dell'atmosfera differente
CY2018030I2 (el) Φαρμακοτεχνικη μορφη 514
BRPI0908985A2 (pt) dispositivos transmissores micromecânicos e modulador transmissor interferométrico
DK1992876T3 (da) Forbrændingsanordning
EP2629151A4 (en) ELEKTRISIERUNGSELEMENT
EP2442709A4 (en) ON THE BODY WORN PULSE OXIMETER
FR2937902B1 (fr) Pneumatique muni de temoins d'usure sonores
EP2004241A4 (en) Implantable sensor
FR2937284B1 (fr) Organe pour pneumatique et pneumatique instrumente
DE502007005051D1 (de) Beschleunigungssensor
PL2314524T3 (pl) Urządzenie rozpylające oraz sposób użycia urządzenia rozpylającego
BRPI0906003A2 (pt) "revestimento de base e estrutura de papelão associada".
ATE513131T1 (de) Streichvorrichtung
EP2336788A4 (en) Inertia sensor
EP2691027A4 (en) ORGANRETRAKTOR
IT1401736B1 (it) Dispositivo di perforazione per l'esecuzione di diaframmi e relativo metodo.
FR2939766B1 (fr) Pylone central d'aeronef.
FR2934328B1 (fr) Soupape d'injection
EP2397397A4 (en) ACCELERATOR
EP2110672A4 (en) Acceleration sensor
EP2307891A4 (en) ACCELERATION DETECTOR
FR2939626B1 (fr) Organe d'infusion
ES1069414Y (es) Manometro
FR2963784B1 (fr) Microsystemes electromecaniques a gaps d'air.
ES1069487Y (es) Flexometro con uña de adherencia incrementada