ITMI910132A1 - Cella dram avente una struttura ad alette perfezionata e procedimento di formazione di essa - Google Patents

Cella dram avente una struttura ad alette perfezionata e procedimento di formazione di essa

Info

Publication number
ITMI910132A1
ITMI910132A1 IT000132A ITMI910132A ITMI910132A1 IT MI910132 A1 ITMI910132 A1 IT MI910132A1 IT 000132 A IT000132 A IT 000132A IT MI910132 A ITMI910132 A IT MI910132A IT MI910132 A1 ITMI910132 A1 IT MI910132A1
Authority
IT
Italy
Prior art keywords
perfected
fin structure
dram cell
training procedure
training
Prior art date
Application number
IT000132A
Other languages
English (en)
Inventor
Rho Byunghyug
Laeku Kang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI910132A0 publication Critical patent/ITMI910132A0/it
Publication of ITMI910132A1 publication Critical patent/ITMI910132A1/it
Application granted granted Critical
Publication of IT1245099B publication Critical patent/IT1245099B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/02Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03Making the capacitor or connections thereto
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/01Manufacture or treatment
    • H10D1/041Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
ITMI910132A 1990-11-01 1991-01-22 Cella dram avente una struttura ad alette perfezionata e procedimento di formazione di essa IT1245099B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900017705A KR920010908A (ko) 1990-11-01 1990-11-01 개선된 핀 구조를 갖는 디램 셀 및 그의 제조방법

Publications (3)

Publication Number Publication Date
ITMI910132A0 ITMI910132A0 (it) 1991-01-22
ITMI910132A1 true ITMI910132A1 (it) 1992-07-22
IT1245099B IT1245099B (it) 1994-09-13

Family

ID=19305569

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI910132A IT1245099B (it) 1990-11-01 1991-01-22 Cella dram avente una struttura ad alette perfezionata e procedimento di formazione di essa

Country Status (5)

Country Link
JP (1) JPH079947B2 (it)
KR (1) KR920010908A (it)
DE (1) DE4101939A1 (it)
GB (1) GB9100673D0 (it)
IT (1) IT1245099B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19842684C1 (de) * 1998-09-17 1999-11-04 Siemens Ag Auf einem Stützgerüst angeordneter Kondensator in einer Halbleiteranordnung und Herstellverfahren
CN116995060A (zh) 2022-04-26 2023-11-03 长鑫存储技术有限公司 半导体结构及半导体结构的制作方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0750347B1 (en) * 1987-06-17 2002-05-08 Fujitsu Limited Dynamic random access memory device and method of producing the same

Also Published As

Publication number Publication date
DE4101939A1 (de) 1992-05-14
JPH0629479A (ja) 1994-02-04
GB9100673D0 (en) 1991-02-27
IT1245099B (it) 1994-09-13
ITMI910132A0 (it) 1991-01-22
JPH079947B2 (ja) 1995-02-01
KR920010908A (ko) 1992-06-27

Similar Documents

Publication Publication Date Title
FI944602L (fi) Farmaseuttisesti aktiiviset bisyklis-heterosykliset amiinit
DE69028996D1 (de) Thermoenergiespeichergerät
DE69616315D1 (de) Energiespeicher
DE59108003D1 (de) Hochenergiebatterie
DE59206244D1 (de) Magnetlagerzelle
FI930433A7 (fi) Bittimuistisolu
ES549567A0 (es) Un dispositivo para implantar,mediante insercion en un lugarde dificil acceso, una protesis sustancialmente tubular y radialmente expandible
DE69415076D1 (de) Filmspeicherblatt
ITMI912535A1 (it) Procedimento per fabbricare un condensatore a cella di dram e struttura di esso
DE69223500D1 (de) Gate-Array-Basiszelle
LU91147I2 (fr) Pemetrexed et ses sels pharmaceutiquement acceptables.
IT1242360B (it) Condensatore impilato per una cella dram e metodo per fabbricarlo.
IT1242357B (it) Condensatore impilato di una cella dram e procedimento per questo.
NO940266D0 (no) Indre straalingsskade
ITTO910664A1 (it) Procedimento e dispositivo per la guida dello slittone di una pressa
FI910254A7 (fi) Oraalisesti aktiivisia reniini-inhibiittoreita
ITMI910351A1 (it) Cella dram avente una struttura sagomata a tunnel e procedimento di formazione di essa
FI973110A7 (fi) Energian säilöntä- ja muuntolaite
ITMI930255A1 (it) Catodo attivato per celle cloro-soda e relativo metodo di preparazione
TR25252A (tr) BENFLUTRIN VE PRALLETRIN IHTIVA EDEN PIRETROID TüRü AKTIF BILESIK KOMBINASYONLARI
NO943743D0 (no) System for generering og overföring av energi
ITMI910132A0 (it) Cella dram avente una struttura ad alette perfezionata e procedimento di formazione di essa
DE69218430D1 (de) Energiespeichervorrichtung
ITMI940869A0 (it) Procedimento e dispositivo per il raddrizzamento di una scatola pieghevole
FI951443A7 (fi) Sivuovi

Legal Events

Date Code Title Description
0001 Granted