ITMI950765A0 - Dispositivo di controllo per laser a semiconduttore a potenza elevata che utilizza un dispositivo a semiconduttore monolitico con un commutatore strutturato come un tiristore - Google Patents

Dispositivo di controllo per laser a semiconduttore a potenza elevata che utilizza un dispositivo a semiconduttore monolitico con un commutatore strutturato come un tiristore

Info

Publication number
ITMI950765A0
ITMI950765A0 ITMI950765A ITMI950765A ITMI950765A0 IT MI950765 A0 ITMI950765 A0 IT MI950765A0 IT MI950765 A ITMI950765 A IT MI950765A IT MI950765 A ITMI950765 A IT MI950765A IT MI950765 A0 ITMI950765 A0 IT MI950765A0
Authority
IT
Italy
Prior art keywords
thyristor
high power
laser control
control device
semiconductor laser
Prior art date
Application number
ITMI950765A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of ITMI950765A0 publication Critical patent/ITMI950765A0/it
Publication of ITMI950765A1 publication Critical patent/ITMI950765A1/it
Application granted granted Critical
Publication of IT1273557B publication Critical patent/IT1273557B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0421Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0428Electrical excitation ; Circuits therefor for applying pulses to the laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Thyristors (AREA)
ITMI950765A 1994-04-18 1995-04-13 Dispositivo di controllo per laser a semiconduttore a potenza elevata che utilizza un dispositivo a semiconduttore monolitico con un commutatore strutturato come un tiristore IT1273557B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940008108A KR970009669B1 (ko) 1994-04-18 1994-04-18 레이저 다이오드 드라이버

Publications (3)

Publication Number Publication Date
ITMI950765A0 true ITMI950765A0 (it) 1995-04-13
ITMI950765A1 ITMI950765A1 (it) 1996-10-13
IT1273557B IT1273557B (it) 1997-07-08

Family

ID=19381230

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI950765A IT1273557B (it) 1994-04-18 1995-04-13 Dispositivo di controllo per laser a semiconduttore a potenza elevata che utilizza un dispositivo a semiconduttore monolitico con un commutatore strutturato come un tiristore

Country Status (8)

Country Link
KR (1) KR970009669B1 (it)
CN (1) CN1120752A (it)
BR (1) BR9501372A (it)
DE (1) DE19514066A1 (it)
FR (1) FR2720859A1 (it)
GB (1) GB2288689A (it)
IT (1) IT1273557B (it)
TW (1) TW272321B (it)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE364403B (it) * 1972-07-03 1974-02-18 Bofors Ab
US5121401A (en) * 1990-05-03 1992-06-09 Motorola, Inc. Pulsed modulators utilizing transmission lines
US5280168A (en) * 1991-11-25 1994-01-18 The United States Of America As Represented By The Secretary Of The Army Tapered radial transmission line for an optically activated hybrid pulser

Also Published As

Publication number Publication date
BR9501372A (pt) 1995-11-14
TW272321B (it) 1996-03-11
CN1120752A (zh) 1996-04-17
FR2720859A1 (fr) 1995-12-08
KR950030420A (ko) 1995-11-24
DE19514066A1 (de) 1995-11-23
GB2288689A (en) 1995-10-25
KR970009669B1 (ko) 1997-06-17
ITMI950765A1 (it) 1996-10-13
IT1273557B (it) 1997-07-08
GB9507556D0 (en) 1995-05-31

Similar Documents

Publication Publication Date Title
DE69319026D1 (de) Halbleiter-Leistungsmodul
DE69325232D1 (de) Leistungshalbleitermodul
DE69325953D1 (de) Leistungshalbleitermodul
DE59304797D1 (de) Leistungshalbleiter-Modul
DE69318658D1 (de) Leistungs-Halbeiterbauelement
DE69326136D1 (de) Halbleiterlaservorrichtung
DE69414337D1 (de) Leistungs-Halbleiter-Schaltmodul
DE59406106D1 (de) Leistungshalbleiterbauelement
ITMI950450A0 (it) Dispositivo di controllo per laser a semiconduttore a potenza elevata che utilizza un dispositivo monolitico a semiconduttore
DE69432345D1 (de) Halbleiterdiodenlaser
IT8883481A0 (it) Dispositivo per un laser di potenza
DE68928312D1 (de) Leistungshalbleitervorrichtung
DE69423196D1 (de) Halbleiterlaservorrichtung
DE69315308D1 (de) Halbleiterleistungsregler
IT1214806B (it) Dispositivo integrato monolitico di potenza e semiconduttore
DE68928176D1 (de) Leistungshalbleitervorrichtung
IT9083400A0 (it) Dispositivo per un laser di potenza
DE69131235D1 (de) Halbleitende Hochleistungsverstärkervorrichtung
DE69321966D1 (de) Leistungs-Halbleiterbauelement
FI931978A7 (fi) Gallerstyrd GTO-tyristorkopplingskrets
DE69030710D1 (de) Kryogene Leistungshalbleitervorrichtung
IT1273495B (it) Dispositivo di controllo per laser a semiconduttore impulsato, compatto,ad elevata frequenza di ripetizione degli impulsi e potenza elevata
DE68913014D1 (de) Leistungsschaltungsvorrichtung.
DE69308977D1 (de) Halbleiterlaservorrichtung
ITMI950765A0 (it) Dispositivo di controllo per laser a semiconduttore a potenza elevata che utilizza un dispositivo a semiconduttore monolitico con un commutatore strutturato come un tiristore

Legal Events

Date Code Title Description
0001 Granted