ITRM20000636A0 - Procedimento di abbattimento del flusso di ioni e di piccoli detriti in sorgenti di raggi-x molli da plasma, tramite l'uso di kripton. - Google Patents

Procedimento di abbattimento del flusso di ioni e di piccoli detriti in sorgenti di raggi-x molli da plasma, tramite l'uso di kripton.

Info

Publication number
ITRM20000636A0
ITRM20000636A0 IT2000RM000636A ITRM20000636A ITRM20000636A0 IT RM20000636 A0 ITRM20000636 A0 IT RM20000636A0 IT 2000RM000636 A IT2000RM000636 A IT 2000RM000636A IT RM20000636 A ITRM20000636 A IT RM20000636A IT RM20000636 A0 ITRM20000636 A0 IT RM20000636A0
Authority
IT
Italy
Prior art keywords
kripton
amounting
ions
procedure
flow
Prior art date
Application number
IT2000RM000636A
Other languages
English (en)
Inventor
Luca Mezi
Francesco Flora
Chengen Zheng
Original Assignee
Enea Ente Nuove Tec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enea Ente Nuove Tec filed Critical Enea Ente Nuove Tec
Priority to IT2000RM000636A priority Critical patent/IT1316249B1/it
Publication of ITRM20000636A0 publication Critical patent/ITRM20000636A0/it
Priority to EP01830644A priority patent/EP1211918B1/en
Priority to DE60121412T priority patent/DE60121412T2/de
Priority to AT01830644T priority patent/ATE333206T1/de
Publication of ITRM20000636A1 publication Critical patent/ITRM20000636A1/it
Application granted granted Critical
Publication of IT1316249B1 publication Critical patent/IT1316249B1/it

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/009Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094Reduction, prevention or protection from contamination; Cleaning
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70033Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70041Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
  • Coloring (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
IT2000RM000636A 2000-12-01 2000-12-01 Procedimento di abbattimento del flusso di ioni e di piccoli detritiin sorgenti di raggi-x molli da plasma, tramite l'uso di kripton. IT1316249B1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT2000RM000636A IT1316249B1 (it) 2000-12-01 2000-12-01 Procedimento di abbattimento del flusso di ioni e di piccoli detritiin sorgenti di raggi-x molli da plasma, tramite l'uso di kripton.
EP01830644A EP1211918B1 (en) 2000-12-01 2001-10-11 Method of stopping ions and small debris in extreme-ultraviolet and soft x-rays plasma sources by using krypton
DE60121412T DE60121412T2 (de) 2000-12-01 2001-10-11 Methode zum Stoppen von Ionen und Verunreinigungen in Plasma-Strahlungquellen im extremem-ultaviolett oder weichen Röntgenbereich durch Verwendung von Krypton
AT01830644T ATE333206T1 (de) 2000-12-01 2001-10-11 Methode zum stoppen von ionen und verunreinigungen in plasma-strahlungquellen im extremem-ultaviolett oder weichen röntgenbereich durch verwendung von krypton

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2000RM000636A IT1316249B1 (it) 2000-12-01 2000-12-01 Procedimento di abbattimento del flusso di ioni e di piccoli detritiin sorgenti di raggi-x molli da plasma, tramite l'uso di kripton.

Publications (3)

Publication Number Publication Date
ITRM20000636A0 true ITRM20000636A0 (it) 2000-12-01
ITRM20000636A1 ITRM20000636A1 (it) 2002-06-01
IT1316249B1 IT1316249B1 (it) 2003-04-03

Family

ID=11455032

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2000RM000636A IT1316249B1 (it) 2000-12-01 2000-12-01 Procedimento di abbattimento del flusso di ioni e di piccoli detritiin sorgenti di raggi-x molli da plasma, tramite l'uso di kripton.

Country Status (4)

Country Link
EP (1) EP1211918B1 (it)
AT (1) ATE333206T1 (it)
DE (1) DE60121412T2 (it)
IT (1) IT1316249B1 (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3782736B2 (ja) * 2002-01-29 2006-06-07 キヤノン株式会社 露光装置及びその制御方法
EP1349010B1 (en) * 2002-03-28 2014-12-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1349008A1 (en) 2002-03-28 2003-10-01 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
CN1495528B (zh) * 2002-08-15 2011-10-12 Asml荷兰有限公司 光刻投射装置及用于所述装置中的反射器组件
EP1389747B1 (en) * 2002-08-15 2008-10-15 ASML Netherlands B.V. Lithographic projection apparatus and reflector asembly for use in said apparatus
JP2004228456A (ja) 2003-01-27 2004-08-12 Canon Inc 露光装置
US7217940B2 (en) 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
EP1491963A3 (en) * 2003-06-27 2005-08-17 ASML Netherlands B.V. Laser produced plasma radiation system with contamination barrier
US7034308B2 (en) 2003-06-27 2006-04-25 Asml Netherlands B.V. Radiation system, contamination barrier, lithographic apparatus, device manufacturing method and device manufactured thereby
US7167232B2 (en) 2003-12-30 2007-01-23 Asml Netherlands B.V. Lithographic apparatus and radiation source comprising a debris-mitigation system and method for mitigating debris particles in a lithographic apparatus
JP4763684B2 (ja) 2004-03-31 2011-08-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 放射線源により生じる粒子の除去
US7109503B1 (en) * 2005-02-25 2006-09-19 Cymer, Inc. Systems for protecting internal components of an EUV light source from plasma-generated debris
US8018574B2 (en) 2005-06-30 2011-09-13 Asml Netherlands B.V. Lithographic apparatus, radiation system and device manufacturing method
US7368733B2 (en) * 2006-03-30 2008-05-06 Asml Netherlands B.V. Contamination barrier and lithographic apparatus comprising same
US7839482B2 (en) * 2007-05-21 2010-11-23 Asml Netherlands B.V. Assembly comprising a radiation source, a reflector and a contaminant barrier
US7719661B2 (en) * 2007-11-27 2010-05-18 Nikon Corporation Illumination optical apparatus, exposure apparatus, and method for producing device
JP5702164B2 (ja) * 2010-03-18 2015-04-15 ギガフォトン株式会社 極端紫外光源装置、極端紫外光源装置の制御方法及びターゲット供給装置
US9136794B2 (en) 2011-06-22 2015-09-15 Research Triangle Institute, International Bipolar microelectronic device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4408338A (en) * 1981-12-31 1983-10-04 International Business Machines Corporation Pulsed electromagnetic radiation source having a barrier for discharged debris
US4692934A (en) * 1984-11-08 1987-09-08 Hampshire Instruments X-ray lithography system
NL1008352C2 (nl) * 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
AU1241401A (en) * 1999-10-27 2001-05-08 Jmar Research, Inc. Method and radiation generating system using microtargets

Also Published As

Publication number Publication date
EP1211918A1 (en) 2002-06-05
IT1316249B1 (it) 2003-04-03
ITRM20000636A1 (it) 2002-06-01
ATE333206T1 (de) 2006-08-15
DE60121412D1 (de) 2006-08-24
EP1211918B1 (en) 2006-07-12
DE60121412T2 (de) 2007-02-22

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