ITRM20010517A1 - Struttura di condensatore integrato di polisilicio. - Google Patents

Struttura di condensatore integrato di polisilicio.

Info

Publication number
ITRM20010517A1
ITRM20010517A1 IT2001RM000517A ITRM20010517A ITRM20010517A1 IT RM20010517 A1 ITRM20010517 A1 IT RM20010517A1 IT 2001RM000517 A IT2001RM000517 A IT 2001RM000517A IT RM20010517 A ITRM20010517 A IT RM20010517A IT RM20010517 A1 ITRM20010517 A1 IT RM20010517A1
Authority
IT
Italy
Prior art keywords
polysilic
capacitor
integrated
polysilic capacitor
integrated polysilic
Prior art date
Application number
IT2001RM000517A
Other languages
English (en)
Inventor
Giulio Marotta
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to IT2001RM000517A priority Critical patent/ITRM20010517A1/it
Publication of ITRM20010517A0 publication Critical patent/ITRM20010517A0/it
Priority to US10/228,823 priority patent/US6897511B2/en
Publication of ITRM20010517A1 publication Critical patent/ITRM20010517A1/it
Priority to US10/921,396 priority patent/US7009241B2/en
Priority to US10/921,463 priority patent/US7238981B2/en
Priority to US11/211,202 priority patent/US20050280049A1/en
Priority to US11/478,016 priority patent/US20060244039A1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211Design considerations for internal polarisation
    • H10D89/213Design considerations for internal polarisation in field-effect devices
    • H10D89/215Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496Capacitor integral with wiring layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B41/00Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/68Capacitors having no potential barriers
    • H10D1/692Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT2001RM000517A 2001-08-29 2001-08-29 Struttura di condensatore integrato di polisilicio. ITRM20010517A1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT2001RM000517A ITRM20010517A1 (it) 2001-08-29 2001-08-29 Struttura di condensatore integrato di polisilicio.
US10/228,823 US6897511B2 (en) 2001-08-29 2002-08-27 Metal-poly integrated capacitor structure
US10/921,396 US7009241B2 (en) 2001-08-29 2004-08-19 Metal-poly integrated capacitor structure
US10/921,463 US7238981B2 (en) 2001-08-29 2004-08-19 Metal-poly integrated capacitor structure
US11/211,202 US20050280049A1 (en) 2001-08-29 2005-08-25 Metal-poly integrated capacitor structure
US11/478,016 US20060244039A1 (en) 2001-08-29 2006-06-29 Metal-poly integrated capacitor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2001RM000517A ITRM20010517A1 (it) 2001-08-29 2001-08-29 Struttura di condensatore integrato di polisilicio.

Publications (2)

Publication Number Publication Date
ITRM20010517A0 ITRM20010517A0 (it) 2001-08-29
ITRM20010517A1 true ITRM20010517A1 (it) 2003-02-28

Family

ID=11455750

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2001RM000517A ITRM20010517A1 (it) 2001-08-29 2001-08-29 Struttura di condensatore integrato di polisilicio.

Country Status (2)

Country Link
US (5) US6897511B2 (it)
IT (1) ITRM20010517A1 (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4105421B2 (ja) * 2001-10-31 2008-06-25 株式会社日立製作所 固体高分子型燃料電池用電極及びそれを用いた固体高分子型燃料電池並びに発電システム
TW556262B (en) * 2002-10-24 2003-10-01 Nanya Technology Corp A leakage control circuit and a DRAM with a leakage control circuit
KR100672673B1 (ko) 2004-12-29 2007-01-24 동부일렉트로닉스 주식회사 커패시터 구조 및 그 제조방법
US7838919B2 (en) * 2007-03-29 2010-11-23 Panasonic Corporation Capacitor structure
US20090187701A1 (en) * 2008-01-22 2009-07-23 Jin-Ki Kim Nand flash memory access with relaxed timing constraints
EP2166655B1 (en) * 2008-09-23 2016-08-31 ams AG Controlled charge pump arrangement and method for controlling a clocked charge pump
US8154333B2 (en) * 2009-04-01 2012-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump circuits, systems, and operational methods thereof
US8120411B1 (en) * 2009-07-31 2012-02-21 Altera Corporation Charge pump with ramp rate control
US20110032027A1 (en) * 2009-08-05 2011-02-10 Texas Instruments Incorporated Switched bandgap reference circuit for retention mode
US9270247B2 (en) 2013-11-27 2016-02-23 Xilinx, Inc. High quality factor inductive and capacitive circuit structure
US9524964B2 (en) 2014-08-14 2016-12-20 Xilinx, Inc. Capacitor structure in an integrated circuit
US12356552B2 (en) * 2021-06-25 2025-07-08 Intel Corporation Capacitor formed with coupled dies

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234855A (en) * 1990-12-21 1993-08-10 Micron Technology, Inc. Stacked comb spacer capacitor
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
US6115233A (en) * 1996-06-28 2000-09-05 Lsi Logic Corporation Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region
US6088258A (en) * 1998-05-28 2000-07-11 International Business Machines Corporation Structures for reduced topography capacitors
US6146939A (en) * 1998-09-18 2000-11-14 Tritech Microelectronics, Ltd. Metal-polycrystalline silicon-N-well multiple layered capacitor
US6240033B1 (en) * 1999-01-11 2001-05-29 Hyundai Electronics Industries Co., Ltd. Antifuse circuitry for post-package DRAM repair
US6383858B1 (en) * 2000-02-16 2002-05-07 Agere Systems Guardian Corp. Interdigitated capacitor structure for use in an integrated circuit
US6385033B1 (en) * 2000-09-29 2002-05-07 Intel Corporation Fingered capacitor in an integrated circuit
US6710644B2 (en) * 2000-11-29 2004-03-23 Broadcom Corporation Low pass filter corner frequency tuning circuit and method
US6410955B1 (en) * 2001-04-19 2002-06-25 Micron Technology, Inc. Comb-shaped capacitor for use in integrated circuits

Also Published As

Publication number Publication date
ITRM20010517A0 (it) 2001-08-29
US20050280049A1 (en) 2005-12-22
US7009241B2 (en) 2006-03-07
US20050017791A1 (en) 2005-01-27
US6897511B2 (en) 2005-05-24
US7238981B2 (en) 2007-07-03
US20030058693A1 (en) 2003-03-27
US20060039208A1 (en) 2006-02-23
US20060244039A1 (en) 2006-11-02

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