ITRM20010517A1 - Struttura di condensatore integrato di polisilicio. - Google Patents
Struttura di condensatore integrato di polisilicio.Info
- Publication number
- ITRM20010517A1 ITRM20010517A1 IT2001RM000517A ITRM20010517A ITRM20010517A1 IT RM20010517 A1 ITRM20010517 A1 IT RM20010517A1 IT 2001RM000517 A IT2001RM000517 A IT 2001RM000517A IT RM20010517 A ITRM20010517 A IT RM20010517A IT RM20010517 A1 ITRM20010517 A1 IT RM20010517A1
- Authority
- IT
- Italy
- Prior art keywords
- polysilic
- capacitor
- integrated
- polysilic capacitor
- integrated polysilic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
- H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/495—Capacitive arrangements or effects of, or between wiring layers
- H10W20/496—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2001RM000517A ITRM20010517A1 (it) | 2001-08-29 | 2001-08-29 | Struttura di condensatore integrato di polisilicio. |
| US10/228,823 US6897511B2 (en) | 2001-08-29 | 2002-08-27 | Metal-poly integrated capacitor structure |
| US10/921,396 US7009241B2 (en) | 2001-08-29 | 2004-08-19 | Metal-poly integrated capacitor structure |
| US10/921,463 US7238981B2 (en) | 2001-08-29 | 2004-08-19 | Metal-poly integrated capacitor structure |
| US11/211,202 US20050280049A1 (en) | 2001-08-29 | 2005-08-25 | Metal-poly integrated capacitor structure |
| US11/478,016 US20060244039A1 (en) | 2001-08-29 | 2006-06-29 | Metal-poly integrated capacitor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2001RM000517A ITRM20010517A1 (it) | 2001-08-29 | 2001-08-29 | Struttura di condensatore integrato di polisilicio. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ITRM20010517A0 ITRM20010517A0 (it) | 2001-08-29 |
| ITRM20010517A1 true ITRM20010517A1 (it) | 2003-02-28 |
Family
ID=11455750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2001RM000517A ITRM20010517A1 (it) | 2001-08-29 | 2001-08-29 | Struttura di condensatore integrato di polisilicio. |
Country Status (2)
| Country | Link |
|---|---|
| US (5) | US6897511B2 (it) |
| IT (1) | ITRM20010517A1 (it) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4105421B2 (ja) * | 2001-10-31 | 2008-06-25 | 株式会社日立製作所 | 固体高分子型燃料電池用電極及びそれを用いた固体高分子型燃料電池並びに発電システム |
| TW556262B (en) * | 2002-10-24 | 2003-10-01 | Nanya Technology Corp | A leakage control circuit and a DRAM with a leakage control circuit |
| KR100672673B1 (ko) | 2004-12-29 | 2007-01-24 | 동부일렉트로닉스 주식회사 | 커패시터 구조 및 그 제조방법 |
| US7838919B2 (en) * | 2007-03-29 | 2010-11-23 | Panasonic Corporation | Capacitor structure |
| US20090187701A1 (en) * | 2008-01-22 | 2009-07-23 | Jin-Ki Kim | Nand flash memory access with relaxed timing constraints |
| EP2166655B1 (en) * | 2008-09-23 | 2016-08-31 | ams AG | Controlled charge pump arrangement and method for controlling a clocked charge pump |
| US8154333B2 (en) * | 2009-04-01 | 2012-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Charge pump circuits, systems, and operational methods thereof |
| US8120411B1 (en) * | 2009-07-31 | 2012-02-21 | Altera Corporation | Charge pump with ramp rate control |
| US20110032027A1 (en) * | 2009-08-05 | 2011-02-10 | Texas Instruments Incorporated | Switched bandgap reference circuit for retention mode |
| US9270247B2 (en) | 2013-11-27 | 2016-02-23 | Xilinx, Inc. | High quality factor inductive and capacitive circuit structure |
| US9524964B2 (en) | 2014-08-14 | 2016-12-20 | Xilinx, Inc. | Capacitor structure in an integrated circuit |
| US12356552B2 (en) * | 2021-06-25 | 2025-07-08 | Intel Corporation | Capacitor formed with coupled dies |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5234855A (en) * | 1990-12-21 | 1993-08-10 | Micron Technology, Inc. | Stacked comb spacer capacitor |
| US5583359A (en) * | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
| US6115233A (en) * | 1996-06-28 | 2000-09-05 | Lsi Logic Corporation | Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region |
| US6088258A (en) * | 1998-05-28 | 2000-07-11 | International Business Machines Corporation | Structures for reduced topography capacitors |
| US6146939A (en) * | 1998-09-18 | 2000-11-14 | Tritech Microelectronics, Ltd. | Metal-polycrystalline silicon-N-well multiple layered capacitor |
| US6240033B1 (en) * | 1999-01-11 | 2001-05-29 | Hyundai Electronics Industries Co., Ltd. | Antifuse circuitry for post-package DRAM repair |
| US6383858B1 (en) * | 2000-02-16 | 2002-05-07 | Agere Systems Guardian Corp. | Interdigitated capacitor structure for use in an integrated circuit |
| US6385033B1 (en) * | 2000-09-29 | 2002-05-07 | Intel Corporation | Fingered capacitor in an integrated circuit |
| US6710644B2 (en) * | 2000-11-29 | 2004-03-23 | Broadcom Corporation | Low pass filter corner frequency tuning circuit and method |
| US6410955B1 (en) * | 2001-04-19 | 2002-06-25 | Micron Technology, Inc. | Comb-shaped capacitor for use in integrated circuits |
-
2001
- 2001-08-29 IT IT2001RM000517A patent/ITRM20010517A1/it unknown
-
2002
- 2002-08-27 US US10/228,823 patent/US6897511B2/en not_active Expired - Lifetime
-
2004
- 2004-08-19 US US10/921,396 patent/US7009241B2/en not_active Expired - Lifetime
- 2004-08-19 US US10/921,463 patent/US7238981B2/en not_active Expired - Lifetime
-
2005
- 2005-08-25 US US11/211,202 patent/US20050280049A1/en not_active Abandoned
-
2006
- 2006-06-29 US US11/478,016 patent/US20060244039A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| ITRM20010517A0 (it) | 2001-08-29 |
| US20050280049A1 (en) | 2005-12-22 |
| US7009241B2 (en) | 2006-03-07 |
| US20050017791A1 (en) | 2005-01-27 |
| US6897511B2 (en) | 2005-05-24 |
| US7238981B2 (en) | 2007-07-03 |
| US20030058693A1 (en) | 2003-03-27 |
| US20060039208A1 (en) | 2006-02-23 |
| US20060244039A1 (en) | 2006-11-02 |
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