ITRM20040199A1 - Amplificatore di rilevazione per un dispositivo di memoria non volatile. - Google Patents

Amplificatore di rilevazione per un dispositivo di memoria non volatile.

Info

Publication number: ITRM20040199A1
Authority: IT; Italy
Prior art keywords: memory device; volatile memory; detection amplifier; amplifier; detection
Prior art date: 2004-04-21

Application number

IT000199A

Other languages

English (en)

Inventor

Michele Incarnati

Giovanni Santin

Tommaso Vali

Original Assignee

Micron Technology Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-04-21

Filing date

2004-04-21

Publication date

2004-07-21

2004-04-21 Application filed by Micron Technology Inc filed Critical Micron Technology Inc

2004-04-21 Priority to IT000199A priority Critical patent/ITRM20040199A1/it

2004-07-21 Publication of ITRM20040199A1 publication Critical patent/ITRM20040199A1/it

2004-08-05 Priority to US10/912,520 priority patent/US7173856B2/en

2005-04-21 Priority to PCT/US2005/013685 priority patent/WO2005106892A1/en

2007-01-10 Priority to US11/651,687 priority patent/US7394699B2/en

Links

238000001514 detection method Methods 0.000 title 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out

IT000199A 2004-04-21 2004-04-21 Amplificatore di rilevazione per un dispositivo di memoria non volatile. ITRM20040199A1 (it)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
IT000199A ITRM20040199A1 (it)	2004-04-21	2004-04-21	Amplificatore di rilevazione per un dispositivo di memoria non volatile.
US10/912,520 US7173856B2 (en)	2004-04-21	2004-08-05	Sense amplifier for a non-volatile memory device
PCT/US2005/013685 WO2005106892A1 (en)	2004-04-21	2005-04-21	Sense amplifier for a non-volatile memory device
US11/651,687 US7394699B2 (en)	2004-04-21	2007-01-10	Sense amplifier for a non-volatile memory device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
IT000199A ITRM20040199A1 (it)	2004-04-21	2004-04-21	Amplificatore di rilevazione per un dispositivo di memoria non volatile.

Publications (1)

Publication Number	Publication Date
ITRM20040199A1 true ITRM20040199A1 (it)	2004-07-21

Family

ID=35456416

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT000199A ITRM20040199A1 (it)	2004-04-21	2004-04-21	Amplificatore di rilevazione per un dispositivo di memoria non volatile.

Country Status (2)

Country	Link
US (1)	US7173856B2 (it)
IT (1)	ITRM20040199A1 (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2005106892A1 (en) *	2004-04-21	2005-11-10	Micron Technology, Inc.	Sense amplifier for a non-volatile memory device
US20070253255A1 (en) *	2006-04-28	2007-11-01	Girolamo Gallo	Memory device, method for sensing a current output from a selected memory cell and sensing circuit
US7522463B2 (en)	2007-01-12	2009-04-21	Atmel Corporation	Sense amplifier with stages to reduce capacitance mismatch in current mirror load
US7782695B2 (en)	2007-01-12	2010-08-24	Atmel Corporation	Compensated current offset in a sensing circuit
ATE509350T1 (de) *	2007-12-21	2011-05-15	Em Microelectronic Marin Sa	Lesevorrichtung eines nichtflüchtigen speichers mit geringem energieverbrauch und ihr anwendungsverfahren
US8693260B2 (en) *	2011-04-19	2014-04-08	Macronix International Co., Ltd.	Memory array with two-phase bit line precharge
TWI489481B (zh) *	2011-05-20	2015-06-21	Macronix Int Co Ltd	具有二階段位元線預充電的記憶體陣列
US9543030B1 (en) *	2015-06-17	2017-01-10	Sandisk Technologies Llc	Sense amplifier design for ramp sensing
KR20200086144A (ko) *	2019-01-08	2020-07-16	울산과학기술원	3진 메모리 셀 및 이를 포함하는 메모리 장치

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4823031A (en) *	1988-02-01	1989-04-18	Texas Instruments Incorporated	Single-ended sense amplifier with positive feedback
US4982363A (en) *	1988-12-05	1991-01-01	Motorola, Inc.	Sensing structure for single ended input
EP0936620A1 (en)	1998-02-13	1999-08-18	STMicroelectronics S.r.l.	Bit line polarisation system for extended supply range non volatile memory sense amplifier
JP3471251B2 (ja)	1999-04-26	2003-12-02	Ｎｅｃエレクトロニクス株式会社	不揮発性半導体記憶装置
US6137741A (en) *	1999-09-16	2000-10-24	Winbond Electronics Corporation	Sense amplifier with cascode output
JP2001184881A (ja) *	1999-12-28	2001-07-06	Toshiba Corp	不揮発性半導体メモリの読み出し回路
ITRM20010001A1 (it) *	2001-01-03	2002-07-03	Micron Technology Inc	Circuiteria di rilevazione per memorie flash a bassa tensione.
CA2345845C (en) *	2001-04-30	2012-03-27	Mosaid Technologies Incorporated	Bitline precharge
US6507222B1 (en) *	2001-07-23	2003-01-14	Cirrus Logic, Inc.	High speed single ended sense amplifier
US6643178B2 (en) *	2001-07-31	2003-11-04	Fujitsu Limited	System for source side sensing
ITRM20010531A1 (it) *	2001-08-31	2003-02-28	Micron Technology Inc	Dispositivo rilevatore a bassa potenza e alta tensione per memorie ditipo flash.
US6856536B2 (en) *	2002-08-02	2005-02-15	Unity Semiconductor Corporation	Non-volatile memory with a single transistor and resistive memory element
KR100488542B1 (ko) *	2002-10-21	2005-05-11	삼성전자주식회사	비트라인 프리차아지 타임을 개선한 반도체 메모리 장치
JP4583703B2 (ja) *	2002-10-30	2010-11-17	ルネサスエレクトロニクス株式会社	半導体記憶装置
KR100506975B1 (ko) *	2002-12-23	2005-08-09	삼성전자주식회사	개선된 비트라인 센싱동작을 갖는 반도체 메모리 장치
US6771551B1 (en) *	2003-02-04	2004-08-03	Broadcom Corporation	Sense amplifier with adaptive reference generation
US6876595B2 (en) *	2003-06-05	2005-04-05	International Business Machines Corporation	Decode path gated low active power SRAM
KR100546373B1 (ko) *	2003-08-28	2006-01-26	삼성전자주식회사	기준셀을 사용하지 않는 ｖｓｓ／ｖｄｄ 비트라인프리차지 스킴을 갖는 반도체 메모리장치

2004
- 2004-04-21 IT IT000199A patent/ITRM20040199A1/it unknown
- 2004-08-05 US US10/912,520 patent/US7173856B2/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US7173856B2 (en)	2007-02-06
US20050237810A1 (en)	2005-10-27

Publication	Publication Date	Title
ITMI20041957A1 (it)	2005-01-15	Dispositivo di memoria
NL1028105A1 (nl)	2005-08-01	Inrichting voor het detecteren van ioniserende straling.
GB2433815B (en)	2009-02-25	Non-volatile memory device
ITMI20030458A1 (it)	2004-09-12	Dispositivo di caricamento per un fucile semiautomatico.
ITRM20040199A1 (it)	2004-07-21	Amplificatore di rilevazione per un dispositivo di memoria non volatile.
ITTO20050615A1 (it)	2006-03-30	Dispositivo di ritenuta per motociclisti.
ITRM20040165A1 (it)	2004-06-30	Dispositivo di tenuta a cassetta.
ITMO20040180A1 (it)	2004-10-14	Dispositivo di separazione e supporto per un dispositivo di separazione.
ITRM20050379A1 (it)	2007-01-16	Dispositivo per il livellamento di un supporto, in particolare di un supporto per macchine fotografiche e cineprese.
ITMI20031619A1 (it)	2005-02-07	Amplificatore di rilevamento perfezionato.
ITRM20050013A1 (it)	2005-07-14	Dispositivo di memorizzazione avente un sistema di misura di resistenza.
DE602006003509D1 (de)	2008-12-18	Halbleiterspeicheranordnung
NO20054036D0 (no)	2005-08-31	Mateanordning.
ITVA20040021A1 (it)	2004-08-04	Amplificatore di sensing per la lettura di una cella di memoria non volatile
DE502005005969D1 (de)	2008-12-24	Nicht-flüchtiges speicherelement
ITMI20042535A1 (it)	2005-03-28	Dispositivo di memoria
ITMO20040210A1 (it)	2004-11-06	Dispositivo di supporto.
ITRM20050079A1 (it)	2005-08-24	Dispositivo di memorizzazione.
NL1024368A1 (nl)	2005-01-11	Opslaginrichting voor bladmateriaal.
NL1025207A1 (nl)	2004-07-13	Transportinrichting.
DE602005018067D1 (de)	2010-01-14	Nichtflüchtige Speicheranordnung
ITTV20050091A1 (it)	2006-12-23	Dispositivo di supporto, particolarmente per un sanitario.
ITRM20050204A1 (it)	2006-10-30	Rivelatore a scintillazione sub-miniaturizzato.
ITRM20040572A1 (it)	2005-02-22	Dispositivo di protezione biomeccanico.
ITMO20050146A1 (it)	2006-12-15	Dispositivo amplificatore.