ITRM940294A0 - "fotorivelatore a spettro variabile controllato in tensione, per applicazioni di rivelazione e ricostruzione di immagini bidimensionalia colori" - Google Patents

"fotorivelatore a spettro variabile controllato in tensione, per applicazioni di rivelazione e ricostruzione di immagini bidimensionalia colori"

Info

Publication number
ITRM940294A0
ITRM940294A0 ITRM940294A ITRM940294A ITRM940294A0 IT RM940294 A0 ITRM940294 A0 IT RM940294A0 IT RM940294 A ITRM940294 A IT RM940294A IT RM940294 A ITRM940294 A IT RM940294A IT RM940294 A0 ITRM940294 A0 IT RM940294A0
Authority
IT
Italy
Prior art keywords
color image
voltage controlled
image detection
controlled variable
dimensional color
Prior art date
Application number
ITRM940294A
Other languages
English (en)
Inventor
Cesare Giampiero De
Fernanda Irrera
Fabrizio Palma
Original Assignee
Univ Roma
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Roma filed Critical Univ Roma
Priority to ITRM940294A priority Critical patent/IT1272248B/it
Publication of ITRM940294A0 publication Critical patent/ITRM940294A0/it
Priority to US08/437,498 priority patent/US5557133A/en
Priority to DE69503565T priority patent/DE69503565T2/de
Priority to EP95830191A priority patent/EP0682375B1/en
Publication of ITRM940294A1 publication Critical patent/ITRM940294A1/it
Application granted granted Critical
Publication of IT1272248B publication Critical patent/IT1272248B/it
Priority to HK98114035.1A priority patent/HK1012777B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
ITRM940294A 1994-05-12 1994-05-12 Fotorivelatore a spettro variabile controllato in tensione, per applicazioni di rivelazione e ricostruzione di immagini bidimensionalia colori IT1272248B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
ITRM940294A IT1272248B (it) 1994-05-12 1994-05-12 Fotorivelatore a spettro variabile controllato in tensione, per applicazioni di rivelazione e ricostruzione di immagini bidimensionalia colori
US08/437,498 US5557133A (en) 1994-05-12 1995-05-09 Voltage-controlled variable spectrum photodetector for 2D color image detection and reconstruction applications
DE69503565T DE69503565T2 (de) 1994-05-12 1995-05-10 Spannungsgesteuerter Photodetektor mit veränderlichem Spektrum für 2D-Farbbildaufnahmen
EP95830191A EP0682375B1 (en) 1994-05-12 1995-05-10 Voltage-controlled variable spectrum photodetector for 2D colour image detection
HK98114035.1A HK1012777B (en) 1994-05-12 1998-12-18 Voltage-controlled variable spectrum photodetector for 2d colour image detection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITRM940294A IT1272248B (it) 1994-05-12 1994-05-12 Fotorivelatore a spettro variabile controllato in tensione, per applicazioni di rivelazione e ricostruzione di immagini bidimensionalia colori

Publications (3)

Publication Number Publication Date
ITRM940294A0 true ITRM940294A0 (it) 1994-05-12
ITRM940294A1 ITRM940294A1 (it) 1995-11-12
IT1272248B IT1272248B (it) 1997-06-16

Family

ID=11402528

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM940294A IT1272248B (it) 1994-05-12 1994-05-12 Fotorivelatore a spettro variabile controllato in tensione, per applicazioni di rivelazione e ricostruzione di immagini bidimensionalia colori

Country Status (4)

Country Link
US (1) US5557133A (it)
EP (1) EP0682375B1 (it)
DE (1) DE69503565T2 (it)
IT (1) IT1272248B (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1277856B1 (it) * 1995-02-09 1997-11-12 Univ Roma Rivelatore di radiazione ultravioletta in film sottile, con opzione di elevata selettivita' spettrale.
DE19613820A1 (de) * 1996-04-09 1997-10-23 Forschungszentrum Juelich Gmbh Struktur mit einer pin- oder nip-Schichtenfolge
WO1998022982A1 (de) * 1996-11-18 1998-05-28 Boehm Markus Farbbildsensor in ladungsverschiebetechnik
DE19723177A1 (de) * 1997-06-03 1998-12-10 Daimler Benz Ag Spannungsgesteuerter wellenlängenselektiver Photodetektor
IT1291926B1 (it) 1997-06-06 1999-01-21 Univ Roma Sistema di rivelazione di radiazione infrarossa basato su sensori in silicio amorfo e sue leghe
DE19825294A1 (de) * 1998-06-05 1999-12-09 Univ Stuttgart Elektronisches Bauelement, Verfahren zur Herstellung desselben sowie elektronische Schaltung zur Bildverarbeitung
US6459450B2 (en) * 1998-06-24 2002-10-01 Intel Corporation Infrared filterless pixel structure
CA2281265C (en) * 1998-09-22 2003-12-16 Toyota Jidosha Kabushiki Kaisha Method for manufacturing a nonlinear optical thin film
US6111300A (en) * 1998-12-01 2000-08-29 Agilent Technologies Multiple color detection elevated pin photo diode active pixel sensor
US7521658B2 (en) * 2005-12-01 2009-04-21 Aptina Imaging Corporation Pixel having photoconductive layers to absorb different ranges of wavelengths
CN100438083C (zh) * 2006-12-23 2008-11-26 厦门大学 δ掺杂4H-SiC PIN结构紫外光电探测器及其制备方法
CN108963015B (zh) * 2017-05-17 2021-12-10 上海耕岩智能科技有限公司 一种光侦测薄膜、器件、显示装置、光敏二极管的制备方法
DE102021118816A1 (de) * 2021-07-21 2023-01-26 Universität Siegen, Körperschaft des öffentlichen Rechts Optisches Bauelement

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4776894A (en) * 1986-08-18 1988-10-11 Sanyo Electric Co., Ltd. Photovoltaic device
US4799968A (en) * 1986-09-26 1989-01-24 Sanyo Electric Co., Ltd. Photovoltaic device
JPS6394125A (ja) * 1986-10-08 1988-04-25 Yamatake Honeywell Co Ltd カラ−センサ
JPH0671097B2 (ja) * 1987-03-31 1994-09-07 鐘淵化学工業株式会社 カラ−センサ−
US5311047A (en) * 1988-11-16 1994-05-10 National Science Council Amorphous SI/SIC heterojunction color-sensitive phototransistor
JP2890441B2 (ja) * 1989-02-23 1999-05-17 工業技術院長 半導体装置

Also Published As

Publication number Publication date
HK1012777A1 (en) 1999-08-06
IT1272248B (it) 1997-06-16
EP0682375A1 (en) 1995-11-15
DE69503565T2 (de) 1999-04-22
US5557133A (en) 1996-09-17
ITRM940294A1 (it) 1995-11-12
EP0682375B1 (en) 1998-07-22
DE69503565D1 (de) 1998-08-27

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970530